BZX85C3V3RL Series 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators This is a complete series of 1 Watt Zener diodes with limits and excellent operating characteristics that reflect the superior capabilities of silicon–oxide passivated junctions. All this in an axial–lead hermetically sealed glass package that offers protection in all common environmental conditions. http://onsemi.com Cathode Anode Specification Features: • • • • • • Zener Voltage Range – 3.3 V to 85 V ESD Rating of Class 3 (>16 KV) per Human Body Model DO–41 (DO–204AL) Package Double Slug Type Construction Metallurgical Bonded Construction Oxide Passivated Die AXIAL LEAD CASE 59 GLASS Mechanical Characteristics: CASE: Double slug type, hermetically sealed glass FINISH: All external surfaces are corrosion resistant and leads are MARKING DIAGRAM readily solderable L BZX 85C xxx YWW MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230°C, 1/16″ from the case for 10 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Rating Max. Steady State Power Dissipation @ TL ≤ 50°C, Lead Length = 3/8″ Derate above 50°C Operating and Storage Temperature Range Symbol Value Unit PD 1 W 6.67 mW/°C –65 to +200 °C TJ, Tstg L = Assembly Location BZX85Cxxx = Device Code = (See Table Next Page) Y = Year WW = Work Week ORDERING INFORMATION Device Package Shipping BZX85CxxxRL Axial Lead 6000/Tape & Reel BZX85CxxxRL2 Axial Lead 6000/Tape & Reel * The “2” suffix refers to 26 mm tape spacing. Semiconductor Components Industries, LLC, 2002 February, 2002 – Rev. 1 1 Publication Order Number: BZX85C3V3RL/D BZX85C3V3RL Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless I otherwise noted, VF = 1.2 V Max., IF = 200 mA for all types) Symbol IF Parameter VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IZK Reverse Current ZZK Maximum Zener Impedance @ IZK IR Reverse Leakage Current @ VR VR Breakdown Voltage IF Forward Current VF Forward Voltage @ IF IR Surge Current @ TA = 25°C VZ VR V IR VF IZT Zener Voltage Regulator http://onsemi.com 2 BZX85C3V3RL Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max., IF = 200 mA for all types) Zener Voltage (Notes 2 and 3) VZ (Volts) Zener Impedance (Note 4) @ IZT ZZT @ IZT Leakage Current ZZK @ IZK IR @ VR IR (Note 5) Device (Note 1) Device Marking Min Nom Max mA mA µA Max Volts mA BZX85C3V3RL BZX85C3V6RL BZX85C3V9RL BZX85C4V3RL BZX85C4V7RL BZX85C3V3 BZX85C3V6 BZX85C3V9 BZX85C4V3 BZX85C4V7 3.1 3.4 3.7 4.0 4.4 3.3 3.6 3.9 4.3 4.7 3.5 3.8 4.1 4.6 5.0 80 60 60 50 45 20 15 15 13 13 400 500 500 500 600 1 1 1 1 1 1 1 1 1 1.5 60 30 5 3 3 1380 1260 1190 1070 970 BZX85C5V1RL BZX85C5V6RL BZX85C6V2RL BZX85C6V8RL BZX85C7V5RL BZX85C5V1 BZX85C5V6 BZX85C6V2 BZX85C6V8 BZX85C7V5 4.8 5.2 5.8 6.4 7.0 5.1 5.6 6.2 6.8 7.45 5.4 6.0 6.6 7.2 7.9 45 45 35 35 35 10 7 4 3.5 3 500 400 300 300 200 1 1 1 1 0.5 2 2 3 4 4.5 1 1 1 1 1 890 810 730 660 605 BZX85C8V2RL BZX85C9V1RL BZX85C10RL BZX85C12RL BZX85C13RL BZX85C8V2 BZX85C9V1 BZX85C10 BZX85C12 BZX85C13 7.7 8.5 9.4 11.4 12.4 8.2 9.05 10 12.05 13.25 8.7 9.6 10.6 12.7 14.1 25 25 25 20 20 5 5 7 9 10 200 200 200 350 400 0.5 0.5 0.5 0.5 0.5 5 6.5 7 8.4 9.1 1 1 0.5 0.5 0.5 550 500 454 380 344 BZX85C15RL BZX85C16RL BZX85C18RL BZX85C22RL BZX85C24RL BZX85C15 BZX85C16 BZX85C18 BZX85C22 BZX85C24 13.8 15.3 16.8 20.8 22.8 14.7 16.2 17.95 22.05 24.2 15.6 17.1 19.1 23.3 25.6 15 15 15 10 10 15 15 20 25 25 500 500 500 600 600 0.5 0.5 0.5 0.5 0.5 10.5 11 12.5 15.5 17 0.5 0.5 0.5 0.5 0.5 304 285 250 205 190 BZX85C27RL BZX85C30RL BZX85C33RL BZX85C36RL BZX85C43RL BZX85C27 BZX85C30 BZX85C33 BZX85C36 BZX85C43 25.1 28 31 34 40 27 30 33 36 43 28.9 32 35 38 46 8 8 8 8 6 30 30 35 40 50 750 1000 1000 1000 1000 0.25 0.25 0.25 0.25 0.25 19 21 23 25 30 0.5 0.5 0.5 0.5 0.5 170 150 135 125 110 BZX85C47RL BZX85C62RL BZX85C75RL BZX85C82RL BZX85C47 BZX85C62 BZX85C75 BZX85C82 44 58 70 77 47 62 75 82 50 66 80 87 4 4 4 2.7 90 125 150 200 1500 2000 2000 3000 0.25 0.25 0.25 0.25 33 43 51 56 0.5 0.5 0.5 0.5 95 70 60 55 1. TOLERANCE AND TYPE NUMBER DESIGNATION The type numbers listed have zener voltage min/max limits as shown and have a standard tolerance on the nominal zener voltage of ±5%. 2. AVAILABILITY OF SPECIAL DIODES For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage tolerances, contact your nearest ON Semiconductor representative. 3. ZENER VOLTAGE (VZ) MEASUREMENT VZ measured after the test current has been applied to 40 ±10 msec, while maintaining the lead temperature (TL) at 30°C ±1°C, 3/8″ from the diode body. 4. ZENER IMPEDANCE (ZZ) DERIVATION The zener impedance is derived from 1 kHz cycle AC voltage, which results when an AC current having an rms value equal to 10% of the DC zener current (IZT or IZK) is superimposed on IZT or IZK. 5. SURGE CURRENT (IR) NON–REPETITIVE The rating listed in the electrical characteristics table is maximum peak, non–repetitive, reverse surge current of 1/2 square wave or eqivalent sine wave pulse of 1/120 second duration superimposed on the test current, IZT. However, actual device capability is as described in Figure 5 of the General Data – DO–41 Glass. http://onsemi.com 3 PD, STEADY STATE POWER DISSIPATION (WATTS) BZX85C3V3RL Series 1.25 L = 1″ L = 1/8″ 1 L = LEAD LENGTH TO HEAT SINK L = 3/8″ 0.75 0.5 0.25 0 20 40 60 80 100 120 140 TL, LEAD TEMPERATURE (°C) 160 180 Figure 1. Power Temperature Derating Curve http://onsemi.com 4 200 BZX85C3V3RL Series b. Range for Units to 12 to 100 Volts +12 θVZ , TEMPERATURE COEFFICIENT (mV/°C) θVZ , TEMPERATURE COEFFICIENT (mV/°C) a. Range for Units to 12 Volts +10 +8 +6 +4 +2 VZ@IZT RANGE 0 -2 -4 2 3 4 5 6 7 8 9 VZ, ZENER VOLTAGE (VOLTS) 10 11 100 70 50 12 30 20 RANGE 10 7 5 VZ@IZT 3 2 1 10 20 30 50 VZ, ZENER VOLTAGE (VOLTS) 70 100 Ppk , PEAK SURGE POWER (WATTS) 175 θVZ , TEMPERATURE COEFFICIENT (mV/°C) θ JL , JUNCTIONTOLEAD THERMAL RESISTANCE (mV/°C/W) Figure 2. Temperature Coefficients (–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.) 150 125 100 75 50 25 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.9 1 VZ@IZ TA=25°C +4 +2 20mA 0 0.01mA 1mA NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS NOTE: CHANGES IN ZENER CURRENT DO NOT NOTE: EFFECT TEMPERATURE COEFFICIENTS -2 -4 3 4 5 6 7 8 L, LEAD LENGTH TO HEAT SINK (INCHES) VZ, ZENER VOLTAGE (VOLTS) Figure 3. Typical Thermal Resistance versus Lead Length Figure 4. Effect of Zener Current 100 70 50 30 0.8 +6 RECTANGULAR WAVEFORM TJ=25°C PRIOR TO INITIAL PULSE 11V-100V NONREPETITIVE 5% DUTY CYCLE 3.3V-10V NONREPETITIVE 20 10 7 5 3 2 1 0.01 10% DUTY CYCLE 20% DUTY CYCLE 0.02 0.05 0.1 0.2 0.5 This graph represents 90 percentile data points. For worst case design characteristics, multiply surge power by 2/3. 1 2 5 PW, PULSE WIDTH (ms) 10 Figure 5. Maximum Surge Power http://onsemi.com 5 20 50 100 200 500 1000 BZX85C3V3RL Series VZ = 2.7 V 200 1000 700 500 TJ = 25°C iZ(rms) = 0.1 IZ(dc) f = 60 Hz Z Z , DYNAMIC IMPEDANCE (OHMS) Z Z , DYNAMIC IMPEDANCE (OHMS) 1000 500 47 V 100 27 V 50 20 10 6.2 V 5 2 1 0.1 0.2 0.5 1 2 5 10 IZ, ZENER CURRENT (mA) 20 50 IZ = 1 mA 200 100 70 50 5 mA 20 20 mA 10 7 5 2 1 100 1 2 Figure 6. Effect of Zener Current on Zener Impedance 10000 7000 5000 5 7 10 20 30 VZ, ZENER VOLTAGE (V) 50 70 100 Figure 7. Effect of Zener Voltage on Zener Impedance 200 C, CAPACITANCE (pF) TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL BREAKDOWN VOLTAGE 1000 700 500 200 100 70 50 0 V BIAS 100 1 V BIAS 50 20 10 8 20 4 10 7 5 50% OF BREAKDOWN BIAS 1 2 5 10 20 VZ, NOMINAL VZ (VOLTS) 50 100 Figure 9. Typical Capacitance versus VZ 2 1 0.7 0.5 1000 500 +125°C 0.2 I F , FORWARD CURRENT (mA) I R , LEAKAGE CURRENT (µ A) 3 400 300 2000 0.1 0.07 0.05 0.02 0.01 0.007 0.005 +25°C MINIMUM MAXIMUM 200 100 50 20 75°C 10 25°C 5 150°C 0°C 2 0.002 0.001 TJ = 25°C iZ(rms) = 0.1 IZ(dc) f = 60 Hz 3 4 5 6 7 8 9 10 11 12 13 14 1 15 0.4 0.5 0.6 0.7 0.8 0.9 1 VZ, NOMINAL ZENER VOLTAGE (VOLTS) VF, FORWARD VOLTAGE (VOLTS) Figure 8. Typical Leakage Current Figure 10. Typical Forward Characteristics http://onsemi.com 6 1.1 BZX85C3V3RL Series APPLICATION NOTE TJ = TL + ∆TJL. ∆TJL = θJLPD. Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: θJL may be determined from Figure 3 for dc power conditions. For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ(∆TJ) may be estimated. Changes in voltage, VZ, can then be found from: TL = θLAPD + TA. ∆V = θVZ ∆TJ. θLA is the lead-to-ambient thermal resistance (°C/W) and PD is the power dissipation. The value for θLA will vary and depends on the device mounting method. θLA is generally 30 to 40°C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: ∆TJL is the increase in junction temperature above the lead temperature and may be found as follows: θVZ, the zener voltage temperature coefficient, is found from Figure 2. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 5. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of Figure 5 be exceeded. http://onsemi.com 7 BZX85C3V3RL Series OUTLINE DIMENSIONS Zener Voltage Regulators – Axial Leaded 1 Watt DO–41 Glass GLASS DO–41 CASE 59–10 ISSUE R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 59-04 OBSOLETE, NEW STANDARD 59-09. 4. 59-03 OBSOLETE, NEW STANDARD 59-10. 5. ALL RULES AND NOTES ASSOCIATED WITH JEDEC DO-41 OUTLINE SHALL APPLY 6. POLARITY DENOTED BY CATHODE BAND. 7. LEAD DIAMETER NOT CONTROLLED WITHIN F DIMENSION. B K D F DIM A B D F K A F INCHES MIN MAX 0.161 0.205 0.079 0.106 0.028 0.034 --0.050 1.000 --- MILLIMETERS MIN MAX 4.10 5.20 2.00 2.70 0.71 0.86 --1.27 25.40 --- K ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada Email: [email protected] JAPAN: ON Semiconductor, Japan Customer Focus Center 4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031 Phone: 81–3–5740–2700 Email: [email protected] ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800–282–9855 Toll Free USA/Canada http://onsemi.com 8 BZX85C3V3RL/D