Preliminary Data Sheet NX5521 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5521 Series is a 1 550 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are designed and ideal for Fiber To The Home (FTTH). APPLICATION • 155 Mbps FTTH P2P (Fiber To The Home Point to Point) system FEATURES • Optical output power Po = 5.0 mW • Low threshold current lth = 8 mA • Differential efficiency ηd = 0.25 W/A • Wide operating temperature range TC = −40 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Fiber coupling point 5.8 mm The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 Page 1 of 6 NX5521 Series Chapter Title PACKAGE DIMENSIONS (UNIT: mm) 1.0±0.1 BOTTOM VIEW 110°±2° (0.4)*2 φ 5.6+0.00 –0.03 (φ 4.2)*2 *2 (φ 3.55) 1 2 4 3 *2 (0.4) *1 Fiber Coupling Point 15.0±1.0 1.2±0.1 3.90±0.2 5.80±0.05 φ1.5 Δ x = ±300 μ m Δ y = ±300 μ m PIN CONNECTIONS NX5521EH NX5521EK 1 (Case) 1 (Case) Reference Plane 2 4 2 4– φ 0.45 LD LD 4 PD PD 3 3 φ 2.0 *1 Recommendation of Fiber Coupling Conditions Fiber : SMF with 8 degree angle-polished ferrule Fiber coupling distance : 5.80±0.05 mm from reference plane. Fiber coupling alignment : optimixed x, y, θ ( Δ x, Δ y ≤ ±300 μ m). *2 ( ) indicates nominal dimension. R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 Page 2 of 6 NX5521 Series Chapter Title ORDERING INFORMATION Part Number NX5521EH Package Pin Connections 1 4-pin CAN with ball lens cap LD 4 2 PD 3 1 NX5521EK LD 2 4 PD 3 Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Po 10 mW Forward Current of LD IF 150 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 15 V Operating Case Temperature TC −40 to +85 °C Storage Temperature Tstg −40 to +85 °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 Page 3 of 6 NX5521 Series Chapter Title ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) Parameter Symbol Operating Voltage Vop Threshold Current Ith Conditions MIN. TYP. MAX. Unit 1.1 1.5 V 8 20 mA 20 40 Po = 5.0 mW, TC = −40 to +85°C TC = 85°C Differential Efficiency ηd Center Wavelength λC 0.15 Po = 5.0 mW, RMS (−20 dB) 0.25 1 480 W/A 1 580 nm 3.0 nm TC = −40 to +85°C Spectral Width σ Po = 5.0 mW, RMS (−20 dB) TC = −40 to +85°C Rise Time tr 10-90% 0.7 ns Fall Time tf 90-10% 0.7 ns Lateral Beam Angle θ// Po = 5.0 mW 11 deg. Vertical Beam Angle θ⊥ Po = 5.0 mW 11 deg. Monitor Current Im VR = 5 V, Po = 5.0 mW Monitor Dark Current ID VR = 5 V 1.5 200 0.1 VR = 5 V, TC = −40 to +85°C Monitor PD Terminal Capacitance Ct γ *1 Tracking Error 1 000 μA 10 nA 500 VR = 5 V, f = 1 MHz 6 Im = const. (@ Po = 5.0 mW, TC = 25°C) −1.0 20 pF 1.0 dB TC = −40 to +85°C *1 Tracking Error: γ Po γ = 10 log (mW) Po 5.0 [dB] TC = 25°C 5.0 TC = –40 to +85°C Po 0 R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 Im Im (mA) Page 4 of 6 NX5521 Series <R> Chapter Title REFERENCE Document Name Opto-Electronics Devices Pamphlet *1 *1 Document No. PX10160E Published by the former NEC Electronics Corporation. R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 Page 5 of 6 NX5521 Series Chapter Title SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R08DS0028EJ0100 Rev.1.00 Oct 06, 2010 Page 6 of 6 Revision History Rev. − 1.00 Date Apr 2009 Oct 06, 2010 NX5521 Series Data Sheet Description Summary Page − Throughout p.5 Previous No. : PL10754EJ01V0DS Preliminary Data Sheet -> Data Sheet Modification of REFERENCE All trademarks and registered trademarks are the property of their respective owners. C-1 Notice 1. All information included in this document is current as of the date this document is issued. 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