N-Channel MOSFET 600V, 11A, 0.55Ω General Description Features The MDP11N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDP11N60 is suitable device for SMPS, high Speed switching and general purpose applications. VDS = 600V VDS = 660V ID = 11A RDS(ON) ≤ 0.55Ω @ VGS = 10V @ VGS = 10V Applications Power Supply PFC High Current, High Speed Switching Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Drain-Source Voltage @ Tjmax Gate-Source Voltage Symbol Rating Unit VDSS 600 V VDSS @ Tjmax 660 V VGSS ±30 V 11 A 6.9 A 44 A 182 1.45 W W/ oC Dv/dt 4.5 V/ns EAS 720 mJ TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 0.69 o TC=25 C Continuous Drain Current (※) ID o TC=100 C Pulsed Drain Current(1) IDM o TC=25 C Power Dissipation o Derate above 25 C Peak Diode Recovery dv/dt(3) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range PD o C ※ Id limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Dec. 2014 Version 2.2 (1) Unit o C/W (1) 1 MagnaChip Semiconductor Ltd. MDP11N60 N-channel MOSFET 600V MDP11N60 Part Number Temp. Range Package Packing RoHS Status MDP11N60TH -55~150oC TO-220 Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 600 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 IDSS VDS = 600V, VGS = 0V - - 1 μA IGSS VGS = ±30V, VDS = 0V - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 5.5A gfs VDS = 30V, ID = 5.5A Forward Transconductance V - 100 nA 0.45 0.55 Ω - 13 - S - 38.4 - - 11.2 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 14 Input Capacitance Ciss - 1700 VDS = 480V, ID = 11A, VGS = 10V(3) Reverse Transfer Capacitance Crss - 6.2 Output Capacitance Coss - 184 Turn-On Delay Time td(on) - 38 - 50 - 76 tf - 33 IS - 11 Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz VGS = 10V, VDS = 300V, ID = 11A, RG = 25Ω(3) nC pF ns Drain-Source Body Diode Characteristics Maximum Continuous Drain to Source Diode Forward Current Source-Drain Diode Forward Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge VSD IS = 11A, VGS = 0V trr - - A 1.4 V - 430 ns - 4.0 μC IF = 11A, dl/dt = 100A/μs(3) Qrr Note : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C. 3. ISD ≤11.0A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C 4. L=10.9mH, IAS=11A, VDD=50V, Rg =25Ω, Starting TJ=25°C Dec. 2014 Version 2.2 2 MagnaChip Semiconductor Ltd. MDP11N60 N-channel MOSFET 600V Ordering Information 1.0 20 0.9 0.8 RDS(ON) [Ω ] 25 ID,Drain Current [A] Notes 1. 250㎲ Pulse Test 2. TC=25℃ Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 15 10 0.7 VGS=20V VGS=10.0V 0.6 0.5 5 0.4 5 10 15 20 25 0 5 10 VDS,Drain-Source Voltage [V] 20 25 30 ID,Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 ※ Notes : ※ Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage 1. VGS = 10 V 2. ID = 5.5 A 2.5 RDS(ON), (Normalized) Drain-Source On-Resistance 15 2.0 1.5 1.0 0.5 0.0 -100 -50 0 50 100 150 1. VGS = 0 V 2. 250 s Pulse Test 1.1 1.0 0.9 0.8 -50 200 0 50 o ※ Notes : IDR Reverse Drain Current [A] 1. VGS = 0 V 2. ID = 250㎂ 10 ID [A] 200 Fig.4 Breakdown Voltage Variation vs. Temperature * Notes ; 1. VDS=30V 150℃ -55℃ 25℃ 1 4 6 8 10 150℃ 10 25℃ 1 0.1 0.0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Dec. 2014 Version 2.2 150 TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature 2 100 o TJ, Junction Temperature [ C] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP11N60 N-channel MOSFET 600V 30 120V VGS, Gate-Source Voltage [V] 300V 480V Capacitance [pF] 8 6 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss Ciss ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz Crss 1 Fig.7 Gate Charge Characteristics 10 2 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.8 Capacitance Characteristics Operation in This Area is Limited by R DS(on) 14 10 s 100 s 1 12 1 ms 10 ms DC 10 10 ID, Drain Current [A] ID, Drain Current [A] 10 100 ms 0 -1 Single Pulse TJ=Max rated TC=25℃ 10 -1 8 6 4 2 -2 10 10 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 20000 0 10 single Pulse RthJC = 0.69℃/W TC = 25℃ 18000 16000 Power (W) Zθ JC(t), Thermal Response 14000 D=0.5 -1 10 0.2 0.1 -5 10 8000 4000 Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=0.69℃/W 0.01 2000 single pulse 0 1E-5 -2 10 10000 6000 ※ Notes : 0.05 0.02 12000 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 10 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Dec. 2014 Version 2.2 1E-4 4 MagnaChip Semiconductor Ltd. MDP11N60 N-channel MOSFET 600V 4000 3800 3600 3400 3200 3000 2800 2600 2400 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0.1 ※ Note : ID = 11A 10 MDP11N60 N-channel MOSFET 600V Physical Dimension 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Dec. 2014 Version 2.2 5 MagnaChip Semiconductor Ltd. MDP11N60 N-channel MOSFET 600V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec. 2014 Version 2.2 6 MagnaChip Semiconductor Ltd.