DMN10H700S 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) ID TA = +25°C 700mΩ @ VGS = 10V 0.70A 900mΩ @ VGS = 6.0V 0.62A PRODUCT ADVANCED NEW INFORMATION V(BR)DSS 100V Features and Benefits • • • • • • • Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • Applications • • • • DC-DC Converters Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • • Case: SOT23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Solderable per MIL-STD-202, Method 208 Lead Free Plating (Matte Tin Finish Annealed over Alloy 42 Leadframe). Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D D G S G S Top View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMN10H700S-7 DMN10H700S-13 Notes: Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 700 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M = Month (ex: 9 = September) 700 Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMN10H700S Document number: DS38103 Rev. 2 - 2 Mar 3 2017 E Apr 4 2018 F May 5 Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 2020 H Aug 8 Sep 9 2021 I Oct O 2022 J Nov N Dec D April 2016 © Diodes Incorporated DMN10H700S Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Unit V V ID Value 100 ±20 0.70 0.56 Pulsed Drain Current (10μs Pulse, Duty Cycle ≦1%) IDM 2.5 A Maximum Body Diode Continuous Current (Note 6) IS 0.6 A Drain-Source Voltage Gate-Source Voltage PRODUCT ADVANCED NEW INFORMATION Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case Operating and Storage Temperature Range Symbol (Note 5) (Note 6) Value 0.4 0.5 303 239 88 -55 to +150 PD Steady state (Note 6) RθJA RθJA RθJC TJ, TSTG Unit W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 1 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 100V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) 2.7 540 550 0.9 4.0 700 900 1.1 V Static Drain-Source On-Resistance 2.0 mΩ VDS = VGS, ID = 250µA VGS = 10V, ID = 1.5A VGS = 6.0V, ID = 1.0A VGS = 0V, IS = 1.5A Ciss Coss Crss RG 235 7 5 pF VDS = 50V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz 1.9 4.6 1.1 1.6 2.5 1.1 5.4 1.0 22 15 Qg Qgs Qgd nC VDS = 50V, VGS = 10V, ID = 1.0A ns VDS = 50V, ID = 1.0A, VGS = 10V, RG = 6.0Ω ns nC VR = 100V, IF=1.8A, di/dt=100A/µs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: VSD tD(ON) tR tD(OFF) tF tRR QRR V Test Condition 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. DMN10H700S Document number: DS38103 Rev. 2 - 2 2 of 7 www.diodes.com April 2016 © Diodes Incorporated DMN10H700S 3 4.0 VGS=10.0V 2.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 2.5 VGS=6.0V 3.0 VGS=4.5V 2.0 1.5 1.0 VGS=3.8V 0.5 2 1.5 1 150℃ 25℃ -55℃ 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 1 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 2 1.8 1.6 1.4 1.2 VGS=6V 1 0.8 0.6 VGS=10V 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 5 4 150℃ 3 125℃ 1 0 0 0.5 1 1.5 2 2.5 3 3.5 7 6 5 4 3 2 ID=1.0A 1 0 4 Document number: DS38103 Rev. 2 - 2 8 12 16 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 4 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Junction Temperature DMN10H700S 6 8 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS= 10V -55℃ 25℃ 5 9 4 6 85℃ 4 10 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 2 3 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85℃ 125℃ 0.5 VGS=4.0V 0.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) PRODUCT ADVANCED NEW INFORMATION VDS=5V VGS=5.0V 3.5 3 of 7 www.diodes.com 2.5 2 VGS=10V, ID=1.5A 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature April 2016 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.6 1.4 1.2 1 VGS=10V, ID=1.5A 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 4 3.5 2.5 ID=250μA 2 1.5 1 0.5 0 -50 150 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 1000 CT, JUNCTION CAPACITANCE (pF) 5 IS, SOURCE CURRENT (A) ID=1mA 3 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature 4 VGS=0V,TJ=85℃ 3 VGS=0V,TJ=125℃ 2 VGS=0V, TJ=25℃ VGS=0V,TJ=150℃ VGS=0V, TJ=-55℃ 1 f=1MHz Ciss 100 Coss 10 Crss 1 0 0 0.3 0.6 0.9 1.2 0 1.5 5 10 15 20 25 30 35 40 45 50 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 10 10 RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VGS (V) PRODUCT ADVANCED NEW INFORMATION DMN10H700S 6 VDS=50V, ID=1A 4 0.1 0.01 0.001 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 Document number: DS38103 Rev. 2 - 2 PW =100ms PW =1s TJ(MAX)=150℃ TC=25℃ Single Pulse DUT on 1*MRP board PW =10s DC VGS=10V 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area Qg (nC) Figure 11. Gate Charge DMN10H700S PW =100μs PW =10ms 1 2 PW =1ms 4 of 7 www.diodes.com April 2016 © Diodes Incorporated DMN10H700S PRODUCT ADVANCED NEW INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 D=Single Pulse 0.001 1E-05 0.0001 RθJA(t)=r(t) * RθJA RθJA=301℃ /W Duty Cycle, D=t1 / t2 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN10H700S Document number: DS38103 Rev. 2 - 2 5 of 7 www.diodes.com April 2016 © Diodes Incorporated DMN10H700S Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PRODUCT ADVANCED NEW INFORMATION SOT23 All 7° H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D F G SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMN10H700S Document number: DS38103 Rev. 2 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com April 2016 © Diodes Incorporated DMN10H700S IMPORTANT NOTICE PRODUCT ADVANCED NEW INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMN10H700S Document number: DS38103 Rev. 2 - 2 7 of 7 www.diodes.com April 2016 © Diodes Incorporated