D20N06E 20 Amps,55 Volts N-CHANNEL Power MOSFET DFN5*6 FEATURE 20A,55V,RDS(ON)MAX =15mΩVGS=10V/5A Low gate charge Low C iss Fast switching 100% avalanche tested Improved dv/dt capability APPLICATION High Frequency Piont-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System LCD/LED back light GENERAL DESCRIPTION The D20N06E is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The D20N06E meet the RoHS and Green product requirement,100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Symbol D20N06E Drain-Source Voltage VDSS 55 Gate-Source Voltage VGSS ±20 Continuous Drain Current ID 20 Pulsed Drain Current(Note1) IDM 80 Single Pulse Avalanche Energy (Note 2) EAS 20 mJ Avalanche Current IAS 20 A dv/dt 5.5 V/ns TJ,TSTG -55 to +150 ℃ TCH 150 ℃ TL 260 ℃ Parameter Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Channel Temperature Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds Thermal UNIT V A Characteristics Parameter Symbol MAX Units Thermal resistance , Channel to Case Rth(ch-c) 2.7 ℃/W Thermal resistance , Channel to Ambient Rth(ch-a) 55 ℃/W PD 38 W Maximum Power Dissipation TC=25℃ Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units 55 － － V － 0.036 － V/℃ Off Characteristics Drain-Source Breakdown Voltage Breakdown Temperature Coefficient BVDSS ΔBVDSS VGS=0V,ID=250uA Reference to 25℃， /ΔTJ ID=250uA IDSS VDS=55VGS=0V － － 1 μA IDSS VDS=55VGS=0V（TJ =55℃） － － 5 μA IGSS VGS=±20V DS=0V － － ±100 nA Gate-Source Threshold Voltage VGS(th) VDS=10V,ID=250uA 1 － 3 V Drain-Source On-State Resistance RDS(on) VGS=10V,ID=5A － 11.5 15 VGS=4.5V,ID=5A － 12.7 17 Zero Gate Voltage Drain Current Gate-Body Leakage Current,Forward On Characteristics mΩ Dynamic Characteristics Input Capacitance Ciss VDS=30V,VGS=0V, － 1340 － pF Output Capacitance Coss f=1.0MHZ － 123 － pF Reverse Transfer Capacitance Crss － 10 － pF VDD=30V,RG=3Ω， － 6 － ns tr RL=1.5Ω － 2.5 － ns td(off) VGS=10V － 22 － ns － 2.5 － ns Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time Turn-Off Delay Time (Note4,5) Turn-Off Fall Time tf Total Gate Charge Qg VDS=30V,ID=20A, － 21 － nC Gate-Source Charge Qgs VGS=10V, (Note4,5) － 4.7 － nC Gate-Drain Charge Qgd － 2.6 － nC － － 20 A － － 80 A － － 1 V Drain-Source Body Diode Charcteristics and Maximum Ratings Continuous Diode Forward Current IS Pulsed Diode Forward Current ISM Diode Forward Voltage VSD VG = VD= 0V, Force Current IS=1A,V GS=0V Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=25V,L=0.1mH,R g=25Ω,IAS=20A , starling TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,V DD≤BV DSS,starting TJ=25℃，Pulse width≤300us;duty cycle≤2%. 4. Repetitive rating; pulse width limited by maximum junction temperature. RATINGAND CHARACTERISTIC CURVES RATINGAND CHARACTERISTIC CURVES 12 6V 4.5V VGS,Gate-to-Source Voltage(V) ID,Drain-to-Source Current(A) 80 10V 60 3.5V 40 20 V GS= 3V 0 4 3 1 2 V DS ,Drain-to-Source Voltage(V) 0 T J =150℃ 4 2 0 30 C iss C oss 100 C rss 10 V GS =0 V 0.2 0.4 0.6 0.8 1.0 1.2 V DS ,Source-Drain Voltage(V) F= 1M Hz 0 1.4 0 3 90 2.5 R DS(on),Drain-to-Source On Resistance (Normalized) 100 80 70 60 50 40 5 10 15 20 25 Q g ,Total Gate Charge(nC) 1000 T J =25℃ Capacitance(pF) ISD , Reverse Drain Current(A) 6 10000 1 0.1 VDS , Drain-to-Source Brakdown Voltage(V) 8 0 5 100 10 10 V DS =30V I D =20 A -60 -40 -20 0 25 50 75 100 125 150 175 T J , Junction Temperature( ℃ ) 30 40 50 10 20 V DS ,Drain-to-Source Voltage(V) 60 2 1.5 V GS =10 V 1 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Junction Temperature( ℃ ) 20 RDS(ON) , Rrain-Source On-Resistance (mΩ) ID, Drain Current(A) O peration in this A rea L im ited by R D S (on) I D M = L im ited 100 10 1m s 10m s DC 1 L im ited by R D S (on) 0.1 T C = 25 ℃ T J = 150 ℃ B V D S S L im ited S ingle P ulse 0.01 0.1 1 10 V D S ,D rain-to-S ource V oltage(V ) 0.1 1 10 I D , D rain C urrent(A ) 100 5 VTH , Gate Threshold Voltage(V) EAS , Avalanche Energy(mJ) V G S =10 V 10 1 20 15 10 5 0 V G S =4.5 V 100 25 C om m on S ource T c= 25 ℃ P ulse T est 4 3 2 1 0 -80 25 50 75 100 125 150 T C H , C hannel T em perature(Initial) ( ℃ ) C om m on S ource V D S = 10V I D = 250uA P ulse T est -40 0 40 80 120 T C , C ase T em perature( ℃ ) 140 1 Nomalized Effective Transient Thermal Impedance D uty C ycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 S in gle Pu lse 0.001 0.01 0.1 P ulse T im e(s) 1 10