Thinki MBRF3035CTR 30.0 amperes insulated dual common anode schottky half bridge rectifier Datasheet

®
MBRF3035CTR thru MBRF30200CTR
Pb
MBRF3035CTR thru MBRF30200CTR
Pb Free Plating Product
30.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers
ITO-220AB
Unit : inch (mm)
.189(4.8)
.165(4.2)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
.606(15.4)
.583(14.8)
.112(2.85)
.100(2.55)
Features
Standard MBR matured technology with high reliablity
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,EPS and UPS
Car Audio Amplifiers and Sound Device Systems
.161(4.1)MAX
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
Mechanical Data
Case: Fully Isolated Molding TO-220F Full Plastic Pak
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
.1
.1
(2.55)
(2.55)
.032(.8)
MAX
Case
Case
Case
.114(2.9)
.098(2.5)
.543(13.8)
.512(13.0)
Application
Doubler
Tandem Polarity
Suffix "CTD"
Negative
Positive
Common Cathode Common Anode
Suffix "CT"
Suffix "CTR"
Case
Series
Tandem Polarity
Suffix "CTS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF
PARAMETER
SYMBOL 3035
3045
3050
3060
3090 30100 30150 30200 UNIT
CTR
CTR
CTR
CTR
CTR
CTR
CTR
CTR
Maximum repetitive peak reverse voltage
VRRM
35
45
50
60
90
100
150
200
Maximum RMS voltage
VRMS
24
31
35
42
63
70
105
140
V
Maximum DC blocking voltage
VDC
35
45
50
60
90
100
150
200
V
Maximum average forward rectified current
IF(AV)
30
A
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
IFRM
30
A
Peak forward surge current, 8.3 ms single half
sine-wave superimposed on rated load
IFSM
200
A
Peak repetitive reverse surge current (Note 1)
IRRM
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25℃
IF=15A, TJ=125℃
IF=30A, TJ=25℃
IF=30A, TJ=125℃
Maximum reverse current @ rated VR
TJ=25 ℃
TJ=125 ℃
VF
IR
1
0.5
A
0.70
0.75
0.84
0.95
0.60
0.65
0.70
0.80
0.82
0.90
0.94
1.05
0.73
0.78
0.82
0.92
0.2
20
10
15
V
V
mA
Voltage rate of change (Rated VR)
dV/dt
10000
Typical thermal resistance
RθJC
4
V/μs
℃/W
TJ
- 55 to +150
℃
TSTG
- 55 to +150
℃
Operating junction temperature range
Storage temperature range
Note 1: tp = 2.0 μs, 1.0KHz
Note 2: Pulse test with PW=300μs, 1% duty cycle
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/
®
MBRF3035CTR thru MBRF30200CTR
RATINGS AND CHARACTERISTICS CURVES
(TA=25℃ unless otherwise noted)
FIG.1 FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD A
CURRENT (A)
30
25
20
15
10
RESISTIVE OR
INDUCTIVELOAD
WITH HEATSINK
5
0
50
60
70
80
90
100
110
120
130
140
150
FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT PER LEG
PEAK FORWARD SURGE CURRENT (A)
35
225
8.3ms Single Half Sine Wave
JEDEC Method
200
175
150
125
100
75
50
1
10
CASE TEMPERATURE (oC)
FIG. 3 TYPICAL FORWARD CHARACTERISTICS
PER LEG
FIG. 4 TYPICAL REVERSE CHARACTERISTICS
PER LEG
100
100
TJ=125℃
MBRF3035CTR-MBRF3045CTR
1
MBRF3050CTR-MBRF3060CTR
MBRF3090CTR-MBRF30100CTR
0.1
MBRF30150CTR-MBRF30200CTR
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
Pulse Width=300μs
1% Duty Cycle
10
10
TJ=75℃
1
0.1
TJ=25℃
0.01
MBRF3035CTR-MBRF3045CTR
MBRF3050CTR-MBRF30200CTR
0.001
0
20
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
10000
f=1.0MHz
MBRF3035CTR-MBRF3045CTR
Vsig=50mVp-p
MBRF3050CTR-MBRF3060CTR
MBRF3090CTR-MBRF30200CTR
10
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
80
100
120
140
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE
PER LEG
100
1
60
100
1000
REVERSE VOLTAGE (V)
40
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
TRANSIENT THERMAL
IMPEDANCE (℃/W)
JUNCTION CAPACITANCE (pF) A
FORWARD VOLTAGE (V)
0.1
100
NUMBER OF CYCLES AT 60 Hz
100
10
1
0.1
0.01
0.1
1
10
100
T-PULSE DURATION(s)
Page 2/2
http://www.thinkisemi.com/
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