Diodes DMP1011LFV-7 P-channel enhancement mode mosfet Datasheet

DMP1011LFV
P-CHANNEL ENHANCEMENT MODE MOSFET
BVDSS
RDS(ON) Max
-12V
11.7mΩ @ VGS = -4.5V
18.6mΩ @ VGS = -2.5V
Features and Benefits
ID Max
TC = +25°C
-19A
-15A
Description

Low RDS(ON) – Ensures On-State Losses are Minimized

Small Form Factor Thermally Efficient Package Enables Higher
®
Density End Products (PowerDI )

Occupies just 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Product
ESD Protected Up To 3kV
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
ideal for high efficiency power management applications.




Applications
Mechanical Data





This MOSFET is designed to minimize the on-state resistance
(RDS(ON)), yet maintain superior switching performance, making it
Backlighting
Power Management Functions
DC-DC Converters



Case: PowerDI3333-8 (Type UX)
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072grams (Approximate)
PowerDI3333-8 (Type UX)
Bottom View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMP1011LFV-7
DMP1011LFV-13
Notes:
Case
PowerDI3333-8 (Type UX)
PowerDI3333-8 (Type UX)
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
YYWW
NEW PRODUCT
INFORMATION
ADVANCED
INFORMATION
ADVANCE
INFORMATION
ADVANCED
Product Summary
N48
T41
T41 = Product Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 17 for 2017)
WW = Week Code (01 to 53)
PowerDI is a registered trademark of Diodes Incorporated.
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
1 of 7
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March 2017
© Diodes Incorporated
DMP1011LFV
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
NEW PRODUCT
INFORMATION
ADVANCED
INFORMATION
ADVANCE
INFORMATION
ADVANCED
t<10s
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%)
Avalanche Current (Note 7) L = 0.3mH
Avalanche Energy (Note 7) L = 0.3mH
TA = +25°C
TA = +70°C
TC = +25°C
TC = +70°C
Value
-12
-6
-13
-10
ID
Unit
V
V
A
-19
-15
3
70
24
86
ID
IS
IDM
IAS
EAS
A
A
A
A
mJ
Thermal Characteristics
Characteristic
Symbol
PD
Total Power Dissipation (Note 5)
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
Value
1.05
118
83.5
2.16
57
40.3
11.7
-55 to +150
RθJA
Total Power Dissipation (Note 6)
PD
Steady State
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RθJA
RθJC
TJ, TSTG
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current (TJ = +25°C)
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-12
—
—
—
—
—
—
-1
-100
V
μA
nA
VGS = 0V, ID = -250μA
VDS = -9.6V, VGS = 0V
VGS = -6V, VDS = 0V
VGS(TH)
RDS(ON)
—
9.8
14.6
-0.8
-1.2
11.7
18.6
-1.0
V
Static Drain-Source On-Resistance
-0.6
—
—
—
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -12A
VGS = -2.5V, ID = -9A
VGS = 0V, IS = -16A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
913
458
53
1.85
9.5
7.1
1.4
1.1
6.3
2.6
14.4
3.9
13.5
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -6V)
Total Gate Charge (VGS = -4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
VSD
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(ON)
tR
tD(OFF)
tF
tRR
QRR
mΩ
V
Test Condition
pF
VDS = -6V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -6V, ID = -12A
ns
VDS = -6V, VGS = -4.5V,
RL = 1Ω, Rg = 4.7Ω, ID =-12A
ns
nC
IF = -12A, dI/dt = 100A/μs
IF = -12A, dI/dt = 100A/μs
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate.
7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
2 of 7
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March 2017
© Diodes Incorporated
DMP1011LFV
30
30.0
VGS = -2.0V
VDS = -5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = -1.5V
VGS = -2.5V
20.0
VGS = -3.0V
VGS=-4.0V
15.0
VGS = -4.5V
10.0
5.0
20
15
10
TJ=125℃
5
VGS = -1.2V
0.0
TJ=-55℃
0
0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS, DRAIN-SOURCE VOLTAGE (V)
2
0
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
0.025
0.02
VGS = -2.5V
0.015
0.01
VGS = -4.5V
0.005
0
0
5
10
15
20
25
30
0.15
0.12
ID = -12A
0.09
0.06
ID = -9A
0.03
0
1
2
VGS = -4.5V
0.016
150℃
125℃
85℃
0.012
0.01
0.008
25℃
0.006
-55℃
0.004
0.002
0
0
5
10
15
20
25
30
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
4
5
6
Figure 4. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
0.02
0.014
3
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.018
3
Figure 2. Typical Transfer Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(W)
TJ=85℃
TJ=25℃
TJ=150℃
VGS = -1.0V
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)
NEW PRODUCT
INFORMATION
ADVANCED
INFORMATION
ADVANCE
INFORMATION
ADVANCED
25.0
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1.5
VGS = -2.5V, ID = -9A
1.2
VGS = -4.5V, ID = -12A
0.9
0.6
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
March 2017
© Diodes Incorporated
0.025
0.02
VGS = -2.5V, ID = -9A
0.015
0.01
VGS = -4.5V, ID = -12A
0.005
0
-50
-25
1.2
VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W)
0.03
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (℃)
1
ID = -1mA
0.8
ID = -250μA
0.6
0.4
0.2
0
150
-50
Figure 7. On-Resistance Variation with Temperature
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junciton
Temperature
10000
TJ = 150oC
VGS = 0V
25
IDSS, LEAKAGE CURRENT (nA)
Is, SOURCE CURRENT (A)
30
20
15
TJ = 85oC
TJ = 125oC
10
TJ = 150oC
5
TJ = 25oC
1000
TJ = 125oC
100
TJ = 85oC
10
1
TJ = 25oC
TJ = -55oC
0.1
0
0
0.3
0.6
0.9
VSD, SOURCE-DRAIN VOLTAGE (V)
0
1.2
2
4
6
8
10
12
VDS, Drain-SOURCE VOLTAGE (V)
Figure 10. Typical Drain-Source Leakge Current vs. Voltage
Figure 9. Diode Forward Voltage vs. Current
100
6
5
10
4
VGS (V)
IGSS, LEAKAGE CURRENT (nA)
NEW PRODUCT
INFORMATION
ADVANCED
INFORMATION
ADVANCE
INFORMATION
ADVANCED
DMP1011LFV
1
0.1
TJ = -55oC
3
TJ = 25oC
TJ = 85oC
2
TJ = 125oC
TJ = 150oC
1
0.01
VDS = -6V, ID = -12A
0
1
2
3
4
5
6
VGS, GATE-SOURCE VOLTAGE (V)
Figure 11. Gate-Source Leakge Current vs. Voltage
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
4 of 7
www.diodes.com
0
2
4
6
8
10
Qg (nC)
Figure 12. Gate Charge
March 2017
© Diodes Incorporated
DMP1011LFV
100
ID, DRAIN CURRENT (A)
PW =100µs
10
PW =1ms
1
PW =10ms
PW =100ms
0.1
0.01
PW =1s
TJ(Max) = 150℃ TC = 25℃ PW =10s
Single Pulse
DC
DUT on 1*MRP Board
VGS= -4.5V
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 13. SOA, Safe Operation Area
1
r(t), TRANSIENT THERMAL RESISTANCE
NEW PRODUCT
INFORMATION
ADVANCED
INFORMATION
ADVANCE
INFORMATION
ADVANCED
RDS(ON) Limited
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
0.01
D=0.02
D=0.01
D=0.005
D=Single Pulse
RθJA(t) = r(t) * RθJA
RθJA = 107℃/W
Duty Cycle, D = t1 / t2
0.001
0.00001
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 14.Transient Thermal Resistance
5 of 7
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10
100
1000
March 2017
© Diodes Incorporated
DMP1011LFV
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8 (Type UX)
A
A1
E1 E
0
NEW PRODUCT
INFORMATION
ADVANCED
INFORMATION
ADVANCE
INFORMATION
ADVANCED
D
D1
c
L
E2
E2a
E2b
D2
k
L
b
e
PowerDI3333-8
(Type UX)
Dim
Min
Max
Typ
A
0.75
0.85
0.80
A1
0.00
0.05
-b
0.25
0.40
0.32
c
0.10
0.25
0.15
D
3.20
3.40
3.30
D1
2.95
3.15
3.05
D2
2.30
2.70
2.50
E
3.20
3.40
3.30
E1
2.95
3.15
3.05
E2
1.60
2.00
1.80
E2a
0.95
1.35
1.15
E2b
0.10
0.30
0.20
e
0.65 BSC
k
0.50
0.90
0.70
L
0.30
0.50
0.40
θ
0°
12°
10°
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
PowerDI3333-8 (Type UX)
X3
8
Y2
X2
Y4
X1
Y1
Dimensions Value (in mm)
C
0.650
X
0.420
X1
0.420
X2
0.230
X3
2.370
Y
0.700
Y1
1.850
Y2
2.250
Y3
3.700
Y4
0.540
Y3
Y
1
X
DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
C
6 of 7
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March 2017
© Diodes Incorporated
DMP1011LFV
IMPORTANT NOTICE
NEW PRODUCT
INFORMATION
ADVANCED
INFORMATION
ADVANCE
INFORMATION
ADVANCED
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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Copyright © 2017, Diodes Incorporated
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DMP1011LFV
Document Number: DS38880 Rev. 3 - 2
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March 2017
© Diodes Incorporated
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