DMP1011LFV P-CHANNEL ENHANCEMENT MODE MOSFET BVDSS RDS(ON) Max -12V 11.7mΩ @ VGS = -4.5V 18.6mΩ @ VGS = -2.5V Features and Benefits ID Max TC = +25°C -19A -15A Description Low RDS(ON) – Ensures On-State Losses are Minimized Small Form Factor Thermally Efficient Package Enables Higher ® Density End Products (PowerDI ) Occupies just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it Backlighting Power Management Functions DC-DC Converters Case: PowerDI3333-8 (Type UX) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072grams (Approximate) PowerDI3333-8 (Type UX) Bottom View Pin Configuration Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP1011LFV-7 DMP1011LFV-13 Notes: Case PowerDI3333-8 (Type UX) PowerDI3333-8 (Type UX) Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information YYWW NEW PRODUCT INFORMATION ADVANCED INFORMATION ADVANCE INFORMATION ADVANCED Product Summary N48 T41 T41 = Product Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 17 for 2017) WW = Week Code (01 to 53) PowerDI is a registered trademark of Diodes Incorporated. DMP1011LFV Document Number: DS38880 Rev. 3 - 2 1 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP1011LFV Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage NEW PRODUCT INFORMATION ADVANCED INFORMATION ADVANCE INFORMATION ADVANCED t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (380µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.3mH Avalanche Energy (Note 7) L = 0.3mH TA = +25°C TA = +70°C TC = +25°C TC = +70°C Value -12 -6 -13 -10 ID Unit V V A -19 -15 3 70 24 86 ID IS IDM IAS EAS A A A A mJ Thermal Characteristics Characteristic Symbol PD Total Power Dissipation (Note 5) Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) Value 1.05 118 83.5 2.16 57 40.3 11.7 -55 to +150 RθJA Total Power Dissipation (Note 6) PD Steady State t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current (TJ = +25°C) Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 — — — — — — -1 -100 V μA nA VGS = 0V, ID = -250μA VDS = -9.6V, VGS = 0V VGS = -6V, VDS = 0V VGS(TH) RDS(ON) — 9.8 14.6 -0.8 -1.2 11.7 18.6 -1.0 V Static Drain-Source On-Resistance -0.6 — — — VDS = VGS, ID = -250μA VGS = -4.5V, ID = -12A VGS = -2.5V, ID = -9A VGS = 0V, IS = -16A — — — — — — — — — — — — — — 913 458 53 1.85 9.5 7.1 1.4 1.1 6.3 2.6 14.4 3.9 13.5 2.5 — — — — — — — — — — — — — — Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -6V) Total Gate Charge (VGS = -4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR mΩ V Test Condition pF VDS = -6V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -6V, ID = -12A ns VDS = -6V, VGS = -4.5V, RL = 1Ω, Rg = 4.7Ω, ID =-12A ns nC IF = -12A, dI/dt = 100A/μs IF = -12A, dI/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMP1011LFV Document Number: DS38880 Rev. 3 - 2 2 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP1011LFV 30 30.0 VGS = -2.0V VDS = -5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = -1.5V VGS = -2.5V 20.0 VGS = -3.0V VGS=-4.0V 15.0 VGS = -4.5V 10.0 5.0 20 15 10 TJ=125℃ 5 VGS = -1.2V 0.0 TJ=-55℃ 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.025 0.02 VGS = -2.5V 0.015 0.01 VGS = -4.5V 0.005 0 0 5 10 15 20 25 30 0.15 0.12 ID = -12A 0.09 0.06 ID = -9A 0.03 0 1 2 VGS = -4.5V 0.016 150℃ 125℃ 85℃ 0.012 0.01 0.008 25℃ 0.006 -55℃ 0.004 0.002 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMP1011LFV Document Number: DS38880 Rev. 3 - 2 4 5 6 Figure 4. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0.02 0.014 3 VGS, GATE-SOURCE VOLTAGE (V) ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.018 3 Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) TJ=85℃ TJ=25℃ TJ=150℃ VGS = -1.0V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) NEW PRODUCT INFORMATION ADVANCED INFORMATION ADVANCE INFORMATION ADVANCED 25.0 3 of 7 www.diodes.com 1.5 VGS = -2.5V, ID = -9A 1.2 VGS = -4.5V, ID = -12A 0.9 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature March 2017 © Diodes Incorporated 0.025 0.02 VGS = -2.5V, ID = -9A 0.015 0.01 VGS = -4.5V, ID = -12A 0.005 0 -50 -25 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) 0.03 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) 1 ID = -1mA 0.8 ID = -250μA 0.6 0.4 0.2 0 150 -50 Figure 7. On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junciton Temperature 10000 TJ = 150oC VGS = 0V 25 IDSS, LEAKAGE CURRENT (nA) Is, SOURCE CURRENT (A) 30 20 15 TJ = 85oC TJ = 125oC 10 TJ = 150oC 5 TJ = 25oC 1000 TJ = 125oC 100 TJ = 85oC 10 1 TJ = 25oC TJ = -55oC 0.1 0 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) 0 1.2 2 4 6 8 10 12 VDS, Drain-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakge Current vs. Voltage Figure 9. Diode Forward Voltage vs. Current 100 6 5 10 4 VGS (V) IGSS, LEAKAGE CURRENT (nA) NEW PRODUCT INFORMATION ADVANCED INFORMATION ADVANCE INFORMATION ADVANCED DMP1011LFV 1 0.1 TJ = -55oC 3 TJ = 25oC TJ = 85oC 2 TJ = 125oC TJ = 150oC 1 0.01 VDS = -6V, ID = -12A 0 1 2 3 4 5 6 VGS, GATE-SOURCE VOLTAGE (V) Figure 11. Gate-Source Leakge Current vs. Voltage DMP1011LFV Document Number: DS38880 Rev. 3 - 2 4 of 7 www.diodes.com 0 2 4 6 8 10 Qg (nC) Figure 12. Gate Charge March 2017 © Diodes Incorporated DMP1011LFV 100 ID, DRAIN CURRENT (A) PW =100µs 10 PW =1ms 1 PW =10ms PW =100ms 0.1 0.01 PW =1s TJ(Max) = 150℃ TC = 25℃ PW =10s Single Pulse DC DUT on 1*MRP Board VGS= -4.5V 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 Figure 13. SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT INFORMATION ADVANCED INFORMATION ADVANCE INFORMATION ADVANCED RDS(ON) Limited D=0.7 D=0.5 D=0.3 D=0.9 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 D=0.005 D=Single Pulse RθJA(t) = r(t) * RθJA RθJA = 107℃/W Duty Cycle, D = t1 / t2 0.001 0.00001 DMP1011LFV Document Number: DS38880 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 14.Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 March 2017 © Diodes Incorporated DMP1011LFV Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) A A1 E1 E 0 NEW PRODUCT INFORMATION ADVANCED INFORMATION ADVANCE INFORMATION ADVANCED D D1 c L E2 E2a E2b D2 k L b e PowerDI3333-8 (Type UX) Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 -b 0.25 0.40 0.32 c 0.10 0.25 0.15 D 3.20 3.40 3.30 D1 2.95 3.15 3.05 D2 2.30 2.70 2.50 E 3.20 3.40 3.30 E1 2.95 3.15 3.05 E2 1.60 2.00 1.80 E2a 0.95 1.35 1.15 E2b 0.10 0.30 0.20 e 0.65 BSC k 0.50 0.90 0.70 L 0.30 0.50 0.40 θ 0° 12° 10° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI3333-8 (Type UX) X3 8 Y2 X2 Y4 X1 Y1 Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 Y4 0.540 Y3 Y 1 X DMP1011LFV Document Number: DS38880 Rev. 3 - 2 C 6 of 7 www.diodes.com March 2017 © Diodes Incorporated DMP1011LFV IMPORTANT NOTICE NEW PRODUCT INFORMATION ADVANCED INFORMATION ADVANCE INFORMATION ADVANCED DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated www.diodes.com DMP1011LFV Document Number: DS38880 Rev. 3 - 2 7 of 7 www.diodes.com March 2017 © Diodes Incorporated