CREE C470EZ290-S2100-2 Cree ez290-n gen 2 led Datasheet

Cree® EZ290-n™ Gen 2 LEDs
Data Sheet (Cathode-up)
CxxxEZ290-Sxx00-2
Cree’s EZBright® LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials
with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs. The
optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. These
vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are
tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as wearable devices, video displays and LCD backlighting.
FEATURES
•
Lambertian Radiation Pattern
APPLICATIONS
•
Cathode-up design (n-pad up)
•
•
EZBright LED Technology, binned @ 20 mA
– 450 nm – 24+ mW
– 460 nm – 24+ mW
– 470 nm – 21+ mW
– 527 nm – 8+ mW
LCD Backlighting
– Mobile Devices
– Monitors
•
Video Displays
•
Wearable Devices
•
Automotive Interior
•
Low Forward Voltage (Vf) – 3.0 V Typical at 20 mA
•
Maximum DC Forward Current – 50 mA
•
AuSn Backside Metal for use with Conductive Adhesives,
Flux Eutectic Attach, Solder Paste & Solder Preforms
CxxxEZ290-Sxx00-2 Chip Diagram
A
CPR3EJ Rev
Data Sheet:
Cathode (-), Ø100 µm
Mesa (Junction)
225 x 225 µm
280 x 280 µm
Top View
Backside Ohmic
Metallization
Thickness
170 µm
Side View
Subject to change without notice.
www.cree.com
Anode (+)
Bottom View
1
Maximum Ratings at TA = 25°C Notes 1&3
CxxxEZ290-Sxx00-2
DC Forward Current
50 mA
Peak Forward Current (1/10 duty cycle @ 1 kHz)
100 mA
LED Junction Temperature
125°C
Reverse Voltage
5V
Operating Temperature Range
-40°C to +100°C
LED Chip Storage Temperature Range
-40°C to +120°C
Recommended Die Sheet Storage Conditions
Electrostatic Discharge Threshold (HBM)
≤30°C / ≤85% RH
1000 V
Note 2
Electrostatic Discharge Classification (MIL-STD-883E)
Class 2
Note 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Part Number
Forward Voltage (Vf, V)
Note 3
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min.
Typ.
Max.
Max.
Typ.
C450EZ290-Sxx00-2
2.7
3.0
3.5
2
20
C460EZ290-Sxx00-2
2.7
3.0
3.5
2
21
C470EZ290-Sxx00-2
2.7
3.0
3.5
2
22
C527EZ290-Sxx00-2
2.9
3.2
3.7
2
35
Mechanical Specifications
Description
CxxxEZ290-Sxx00-2
Dimension
Tolerance
P-N Junction Area (μm)
225 x 225
± 25
Top Area (μm)
280 x 280
± 25
Bottom Area (μm)
280 x 280
± 25
Chip Thickness (μm)
170
± 25
Au Bond Pad Diameter (μm)
100
-15, +5
Au Bond Pad Thickness (μm)
3.0
± 1.0
Back Ohmic Metal Area (μm)
280 x 280
± 25
3.0
± 0.3
Back Ohmic Metal Thickness (μm)
Notes:
1.
Maximum ratings are package-dependent. The above ratings were determined using a thru-hole package (with Hysol® OS4000
epoxy encapsulation) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not
limited by the die but by the effect of the LED junction temperature on the package. The junction temperature limit of 125 °C
is a limit of the thru-hole package; junction temperature should be characterized in a specific package to determine limitations.
Assembly processing temperature must not exceed 325°C (< 5 seconds). See the Cree EZ Applications Note for assembly
process information.
2.
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure
is performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
3.
All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in thru-hole packages (with Hysol OS4000 epoxy encapsulation). Optical characteristics
measured in an integrating sphere using Illuminance E.
4.
Specifications are subject to change without notice.
© 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ290-n™ are trademarks of Cree, Inc. Hysol® is a registered trademark
of Henkel Corporation.
2
CPR3EJ Rev A (201503)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/chips
Standard Bins for CxxxEZ290-Sxx00-2
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only
one bin. Sorted die kit (CxxxEZ290-Sxxxx-2) orders may be filled with any or all bins (CxxxEZ290-xxxx-2) contained in
the kit. All radiant flux and dominant wavelength values shown are specified at If = 20 mA.
Radiant Flux (mW)
C450EZ290-S2400-2
C450EZ290-0417-2
C450EZ290-0418-2
C450EZ290-0419-2
C450EZ290-0420-2
C450EZ290-0413-2
C450EZ290-0414-2
C450EZ290-0415-2
C450EZ290-0416-2
C450EZ290-0409-2
C450EZ290-0410-2
C450EZ290-0411-2
C450EZ290-0412-2
C450EZ290-0405-2
C450EZ290-0406-2
C450EZ290-0407-2
C450EZ290-0408-2
32
30
27
24
445
447.5
450
452.5
455
Dominant Wavelength (nm)
Radiant Flux (mW)
C460EZ290-S2400-2
C460EZ290-0417-2
C460EZ290-0418-2
C460EZ290-0419-2
C460EZ290-0420-2
C460EZ290-0413-2
C460EZ290-0414-2
C460EZ290-0415-2
C460EZ290-0416-2
C460EZ290-0409-2
C460EZ290-0410-2
C460EZ290-0411-2
C460EZ290-0412-2
C460EZ290-0405-2
C460EZ290-0406-2
C460EZ290-0407-2
C460EZ290-0408-2
32
30
27
24
455
457.5
460
462.5
465
Dominant Wavelength (nm)
© 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ290-n™ are trademarks of Cree, Inc. Hysol® is a registered trademark
of Henkel Corporation.
3
CPR3EJ Rev A (201503)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/chips
Standard Bins for CxxxEZ290-Sxx00-2
LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only
one bin. Sorted die kit (CxxxEZ290-Sxxxx-2) orders may be filled with any or all bins (CxxxEZ290-xxxx-2) contained in
the kit. All radiant flux and dominant wavelength values shown are specified at If = 20 mA.
Radiant Flux (mW)
C470EZ290-S2100-2
C470EZ290-0413-2
C470EZ290-0414-2
C470EZ290-0415-2
C470EZ290-0416-2
C470EZ290-0409-2
C470EZ290-0410-2
C470EZ290-0411-2
C470EZ290-0412-2
C470EZ290-0405-2
C470EZ290-0406-2
C470EZ290-0407-2
C470EZ290-0408-2
C470EZ290-0401-2
C470EZ290-0402-2
C470EZ290-0403-2
C470EZ290-0404-2
30
27
24
21
465
467.5
470
472.5
475
Dominant Wavelength (nm)
Radiant Flux (mW)
C527EZ290-S0800-2
C527EZ290-0410-2
C527EZ290-0411-2
C527EZ290-0412-2
C527EZ290-0407-2
C527EZ290-0408-2
C527EZ290-0409-2
C527EZ290-0404-2
C527EZ290-0405-2
C527EZ290-0406-2
C527EZ290-0401-2
C527EZ290-0402-2
C527EZ290-0403-2
14
12
10
8
520
525
530
535
Dominant Wavelength (nm)
© 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ290-n™ are trademarks of Cree, Inc. Hysol® is a registered trademark
of Henkel Corporation.
4
CPR3EJ Rev A (201503)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/chips
Characteristic Curves
These are representative measurements for the EZ LED product. Actual curves will vary slightly for the various radiant
flux and dominant wavelength bins.
Relative Intensity vs. Forward Current
Relative Intensity
400%
300%
200%
100%
0%
0
20
40
60
80
100
80
100
If (mA)
Wavelength Shift vs. Forward Current
DW Shift (nm)
10
5
0
-5
-10
-15
0
20
40
60
If (mA)
Forward Current vs. Forward Voltage
100
If (mA)
80
60
40
20
0
2
3
4
5
Vf (V)
© 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ290-n™ are trademarks of Cree, Inc. Hysol® is a registered trademark
of Henkel Corporation.
5
CPR3EJ Rev A (201503)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/chips
Radiation Pattern
This is a representative radiation pattern for the EZBright LED product. Actual patterns will vary slightly for each chip.
© 2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree®, the Cree logo,
and EZBright® are registered trademarks, and EZ™ and EZ290-n™ are trademarks of Cree, Inc. Hysol® is a registered trademark
of Henkel Corporation.
6
CPR3EJ Rev A (201503)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703-8475 USA
Tel: +1.919.313.5300
Fax: +1.919.313.5778
www.cree.com/chips
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