HT1818-15A GaN Hybrid Power Amplifier Product Features Applications • GaN on SiC HEMT • 2-Stage Amplifier 50ohms Matching • Surface Mount Hybrid Type • Small Size & Mass • High Efficiency • RF Sub-Systems • Base Station • Repeater • 4G/LTE system • Small cell Package Type : NP-1EL Description The HT1818-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance, High power density. Electrical Specifications @ Vds =28V, Ta=25℃ PARAMETER UNIT MIN TYP MAX CONDITION Frequency Range MHz 1805 - 1880 ZS = ZL = 50 ohm 30 33 35 Power Gain Gain Flatness dB Input Return Loss - 0.7 - - -9.0 -5.0 Amp : Idq1 = 50mA Idq2 = 105mA Pout @ Average dBm - 33 - Pout @ Psat dBm 40.8 42 - Pulse Width=20us, Duty10% ACLR* @ BW 10MHz LTE (PAPR 7.5dB) - -39 -30 Non DPD dBc - -54 - With DPD Drain Efficiency % 22 25 - Ids mA - 290 - -3.0 -2.0 Gate Bias (Vgs1 and Vgs2) 28 - Main Bias(Vds) Pout @ Average V Supply Voltage V - Caution The drain voltage must be supplied to the device after the gate voltage is supplied Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies Turn off : Turn off the Drain Voltage and last turn off the Gate voltage Note 1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180) 2. HT Series have internal DC blocking capacitors at the RF input and output ports Mechanical Specifications PARAMETER UNIT TYP REMARK Mass g 2 - Dimension ㎜ 20.5 x 15 x 3.5 - Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 1/8 Version 1.0 GaN Hybrid Power Amplifier HT1818-15A Absolute Maximum Ratings PARAMETER UNIT RATING SYMBOL Gate-Source Voltage V -10 ~ 0 Vgs1 Vgs2 Drain-Source Voltage V 50 Vds Gate Current mA 5.7 Ig Operating Junction Temperature °C 225 TJ Operating Case Temperature °C -30 ~ 85 TC Storage Temperature °C -40 ~ 100 TSTG Maximum RF Input Level dBm 25 Pin Operating Voltage & Input Level PARAMETER UNIT MIN TYP MAX SYMBOL Drain Voltage V 27.5 28 28.5 Vds Gate Voltage (on-stage) V - -3 -2 Vgs 1 Gate Voltage (on-stage) V - -3 -2 Vgs 2 Gate Voltage (off-stage) V - -8 - Vgs 1 Gate Voltage (off-stage) V - -8 - Vgs 2 Idq1 mA 48.5 50 52.5 Idq1 Idq2 mA 100 105 110 Idq2 RF Input Level dBm - - 20 Pin Block Diagram GaN on SiC GaN on SiC Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 2/8 Version 1.0 GaN Hybrid Power Amplifier HT1818-15A Application Circuit Part List Location Model No. Spec. Maker C6, C8 1812C225K101CT 2.2uF / 100V WALSIN C1, C3 C3216X7R1C106K 10uF / 16V TDK 10pF TEMEX 2Layer, 30mil ROGERS C2, C4, C5, C7 Evaluation Board 201CHA100JSLE RO4350B Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 3/8 Version 1.0 HT1818-15A GaN Hybrid Power Amplifier Performance Charts * Bias condition @ Idq1= 50mA, Idq2= 105mA, Ta=25℃ Psat vs. Frequency 35 44 34 43 33 Psat [dBm] Power Gain [dB] Power Gain vs. Frequency 32 Power Gain @Pout=33dBm 31 42 41 Vds=28V 40 Vds=30V 30 1.80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 39 1.80 1.88 1.81 1.82 Frequency[GHz] -37 27 -39 26 -41 25 -43 ACLR_L @Pout=33dBm -45 23 22 1.80 -47 1.82 1.83 1.84 1.85 1.86 1.87 1.88 1.81 1.82 1.83 1.84 1.85 Ids1 vs. Ids2 vs. Frequency Total Ids vs. Frequency 250 300 70 240 290 60 230 280 50 220 Ids1 Total Ids [mA] 80 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 210 260 200 250 1.80 1.88 Total Ids @Pout=33dBm 1.81 1.82 1.83 1.84 1.85 1.86 1.87 1.88 Frequency[GHz] Frequency[GHz] Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] 1.87 270 Ids2 30 1.80 1.86 Frequency[GHz] 40 1.88 Drain Efficiency @Pout=33dBm Frequency[GHz] Ids2 [mA] Ids1 [mA] 1.81 1.87 24 ACLR_U @Pout=33dBm 1.80 1.86 Efficiency vs. Frequency Efficiency [%] ACLR [dBc] ACLR vs. Frequency 1.83 1.84 1.85 Frequency[GHz] All specifications may change without notice 4/8 Version 1.0 HT1818-15A GaN Hybrid Power Amplifier Performance Charts * Bias condition @ Idq1= 50mA, Idq2= 105mA, Ta=25℃ Efficiency vs. Output Power 38 35 36 30 Efficiency [%] Power Gain [dB] Power Gain vs. Output Power 34 32 25 20 1.80GHz 30 1.80GHz 15 1.84GHz 1.84GHz 1.88GHz 1.88GHz 28 10 30 31 32 33 34 35 30 31 Output Power[dBm] ACLR vs. Output Power 33 -25 80 -30 70 -35 60 -40 35 50 1.80GHz 1.80GHz -45 34 Ids1 vs. Output Power Ids1 [mA] ACLR [dBc] 32 Output Power[dBm] 40 1.84GHz 1.84GHz 1.88GHz 1.88GHz 30 -50 30 31 32 33 34 30 35 31 32 33 34 35 Output Power[dBm] Output Power[dBm] *LTE 10MHz (PAPR=7.5dB) w/o DPD Ids2 vs. Output Power 350 Ids2 [mA] 300 250 200 1.80GHz 150 1.84GHz 1.88GHz 100 30 31 32 33 34 35 Output Power[dBm] Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 5/8 Version 1.0 HT1818-15A GaN Hybrid Power Amplifier Package Dimensions (Type: NP-1EL) * Unit: mm[inch] | Tolerance: ±0.15[.006] ▲ Top View ▲ Side View ▲ Bottom View Pin Description Pin No Function Pin No Function Pin No Function Pin No Function 1 RF Input 4 Vgs1 8 GND 11 GND 2 GND 5 Vds 9 GND 12 GND 3 GND 6 Vgs2 10 RF Output 13 GND - - 7 Vds - - 14 GND Recommended Pattern Recommended Mounting Configuration * Mounting Configuration Notes 1. For the proper performance of the device, Ground / Thermal via holes must be designed to remove heat. 2. To properly use heatsink, ensure the ground/thermal via hole region to contact the heatsink. We recommend the mounting screws be added near the heatsink to mount the board 3. In designing the necessary RF trace, width will depend upon the PCB material and construction. 4. Use 1 oz. Copper minimum thickness for the heatsink. 5. Do not put solder mask on the backside of the PCB in the region where the board contacts the heatsink 6. We recommend adding as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 6/8 Version 1.0 GaN Hybrid Power Amplifier HT1818-15A Precautions This product is a Gallium Nitride Transistor. The Gallium Nitride Transistor requires a Negative Voltage Bias which operates alongside a Positive Voltage Bias. These Biases are applied in accordance to the Sequence during Turn-On and Turn-Off. The Pallet Amplifier does not have a built-in Bias Sequence Circuit. Therefore, users need to either apply positive voltages and negative voltages in the required sequence, or add an external Bias Circuit to this Amplifier. The required sequence for power supply is as follows. During Turn-On 1. Connect GND. 2. Apply Vgs1 and Vgs2. 3. Apply Vds. 4. Apply the RF Power. During Turn-Off 1. Turn off RF power. 2. Turn off Vds, and then, turn off the Vgs1 and Vgs2. 3. Remove all connections. Turn On Turn Off - Sequence Timing Diagram - Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 7/8 Version 1.0 GaN Hybrid Power Amplifier HT1818-15A Reflow Profile * Reflow oven settings Zone A B C D E F Temperature(°C) 30 ~ 150 ℃ 150 ~ 180 ℃ 180 ~ 220 ℃ 220 ~ 220 ℃ 235 ~ 240 ℃ 2 ~ 6 ℃/ Sec Drop Belt speed 55 ~ 115 sec 55 ~ 75 sec 30 ~ 50 sec 30 ~ 50 sec 5 ~ 10 sec 60 ~ 90 sec * Reflow Cycle Limit= 1time * Measured reflow profile Ordering Information Part Number Package Design -R (Reel) HT1818-15A -B (Bulk) -EVB (Evaluation Board) Revision History Part Number Release Date Version Modification Data Sheet Status HT1818-15A 2013.02.20 1.0 Electrical Specification (1p) HT1818-15A 2013.02.20 0.7 Application Circuit Package Dimensions Reflow profile Preliminary HT1818-15A 2012.12.27 0.6 Changed Part Number Preliminary - RFHIC Corporation reserves the right to make changes to any products herein or to discontinue any product at any time without notice. While product specifications have been thoroughly examined for reliability, RFHIC Corporation strongly recommends buyers to verify that the information they are using is accurate before ordering. RFHIC Corporation does not assume any liability for the suitability of its products for any particular purpose, and disclaims any and all liability, including without limitation consequential or incidental damages. RFHIC products are not intended for use in life support equipment or application where malfunction of the product can be expected to result in personal injury or death. Buyer uses or sells such products for any such unintended or unauthorized application, buyer shall indemnify, protect and hold RFHIC Corporation and its directors, officers, stockholders, employees, representatives and distributors harmless against any and all claims arising out of such unauthorized use. Sales, inquiries and support should be directed to the local authorized geographic distributor for RFHIC Corporation. For customers in the US, please contact the US Sales Team at 919677-8780. For all other inquiries, please contact the International Sales Team at 82-31-250-5078. Korean Facilities : 82-31-250-5078 / [email protected] US Facility : 919-677-8780 / [email protected] All specifications may change without notice 8/8 Version 1.0