Renesas NP55N055SUG Switching n-channel power mos fet Datasheet

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP55N055SUG
SWITCHING
N-CHANNEL POWER MOS FET
ORDERING INFORMATION
DESCRIPTION
The NP55N055SUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
PART NUMBER
PACKAGE
NP55N055SUG
TO-252 (MP-3ZK)
FEATURES
(TO-252)
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 10 mΩ MAX. (VGS = 10 V, ID = 28 A)
• Low Ciss: Ciss = 3500 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±55
A
ID(pulse)
±220
A
Total Power Dissipation (TC = 25°C)
PT1
77
W
Total Power Dissipation (TA = 25°C)
PT2
1.2
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
IAR
27
A
EAR
73
mJ
Drain Current (pulse)
Note1
Storage Temperature
Repetitive Avalanche Current
Note2
Repetitive Avalanche Energy
Note2
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch < 150°C, VDD = 28 V, RG = 25 Ω, VGS = 20 → 0 V
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.95
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
125
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16863EJ2V0DS00 (2nd edition)
Date Published January 2005 NS CP(K)
Printed in Japan
The mark
shows major revised points.
2004
NP55N055SUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 55 V, VGS = 0 V
1.0
µA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(off)
VDS = VGS, ID = 250 µA
2.0
3.0
4.0
V
| yfs |
VDS = 10 V, ID = 28 A
11
22
RDS(on)
VGS = 10 V, ID = 28 A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
7.7
10
mΩ
Input Capacitance
Ciss
VDS = 25 V
3500
5250
pF
Output Capacitance
Coss
VGS = 0 V
260
390
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
160
290
pF
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 28 A
24
53
ns
VGS = 10 V
18
45
ns
RG = 0 Ω
60
120
ns
8
20
ns
90
nC
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = 44 V
60
Gate to Source Charge
QGS
VGS = 10 V
15
nC
QGD
ID = 55 A
21
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
VF(S-D)
IF = 55 A, VGS = 0 V
0.95
Reverse Recovery Time
trr
IF = 55 A, VGS = 0 V
38
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/µs
45
nC
1.5
V
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
BVDSS
IAS
VDS
ID
VDS
τ
τ = 1 µs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
RL
VDD
Data Sheet D16863EJ2V0DS
td(on)
ton
tf
toff
NP55N055SUG
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
100
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125
150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse) = 220 A
PW = 100 µs
100
ID(DC) = 55 A
10
1 ms
DC
1
10 ms
TC = 25°C
Single pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth - Transient Thermal Resistance - °C/W
ID - Drain Current - A
RDS(on) Limited
(at VGS = 10 V)
Rth(ch-A) = 125°C/W
100
10
Rth(ch-C) = 1.95°C/W
1
0.1
Single pulse
0.01
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D16863EJ2V0DS
3
NP55N055SUG
FORWARD TRANSFER CHARACTERISTICS
1000
260
240
220
200
180
160
140
120
100
80
60
40
20
0
Pulsed
VDS = 10 V
Pulsed
100
ID - Drain Current - A
ID - Drain Current - A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
VGS = 10 V
TA = −55°C
−25°C
25°C
75°C
125°C
150°C
175°C
10
1
0.1
0.01
0.001
0
2
4
6
8
10
12
14
0
2
VDS - Drain to Source Voltage - V
VGS(off) - Gate Cut-off Voltage - V
3.5
3.0
2.5
2.0
1.5
VGS = VDS
ID = 250 µA
0
-100
-50
0
50
100
150
| yfs | - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4.0
0.5
100
TA = −55°C
25°C
125°C
175°C
10
1
VDS = 10 V
Pulsed
0
0.1
200
1
30
25
20
15
VGS = 10 V
5
Pulsed
0
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
1
100
1000
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
Pulsed
18
16
ID = 44 A
28 A
11 A
14
12
10
ID - Drain Current - A
4
10
ID - Drain Current - A
Tch - Channel Temperature - °C
10
6
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
1.0
4
8
6
4
2
0
0
2
4
6
8
10 12 14 16 18 20
VGS - Gate to Source Voltage - V
Data Sheet D16863EJ2V0DS
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
20
18
Ciss, Coss, Crss - Capacitance - pF
16
14
12
10
8
6
VGS = 10 V
ID = 28 A
Pulsed
4
2
0
-100
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
-50
0
50
100
150
200
0.1
Tch - Channel Temperature - °C
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50
1000
VDD = 28 V
VGS = 10 V
RG = 0 Ω
100
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
1
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(off)
td(on)
tr
tf
10
10
VDD = 44 V
28 V
11 V
45
40
8
35
30
6
VGS
25
20
4
15
10
2
VDS
5
1
ID = 55 A
0
0
0.1
1
10
100
0
ID - Drain Current - A
10
20
30
40
50
60
70
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
trr - Reverse Recovery Time - ns
1000
IF - Diode Forward Current - A
Crss
100
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
NP55N055SUG
100
10
VGS = 10 V
0V
1
0.1
VGS = 0 V
di/dt = 100 A/µs
Pulsed
0.01
10
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
0.1
1
10
100
IF - Diode Forward Current - A
Data Sheet D16863EJ2V0DS
5
NP55N055SUG
PACKAGE DRAWING (Unit: mm)
TO-252 (MP-3ZK)
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
No Plating
1.14 MAX.
3
0.51 MIN.
2
0.8
1
6.1±0.2
10.4 MAX. (9.8 TYP.)
4.0 MIN.
4
No Plating
0 to 0.25
0.5±0.1
0.76±0.12
2.3
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
1.0
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D16863EJ2V0DS
NP55N055SUG
• The information in this document is current as of January, 2005. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
all products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
• NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from the use of NEC Electronics products listed in this document
or any other liability arising from the use of such products. No license, express, implied or otherwise, is
granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of a customer's equipment shall be done under the full
responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by
customers or third parties arising from the use of these circuits, software and information.
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customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To
minimize risks of damage to property or injury (including death) to persons arising from defects in NEC
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redundancy, fire-containment and anti-failure features.
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The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC
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each NEC Electronics product before using it in a particular application.
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and industrial robots.
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systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support).
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications
not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to
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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1
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