AWB517 AWB517 Data Sheet 5 ~ 1200 MHz Wide-band CATV Linear Amplifier MMIC 1. Product Overview 1.1 General Description AWB517, a wide-band linear amplifier MMIC, has high linearity and low noise over a wide range of frequency from 5 MHz to 1200 MHz, being suitable for use in the fiber receiver, distribution amplifiers and drop amplifiers of CATV. The amplifier is available in an SOT89 package and passes through the stringent 100% DC & RF test via an automated test handler. 1.2 Features 5 ~ 1200 MHz Bandwidth 17.5 dB Gain at 500 MHz Output Power: 101 dBV 2.3 dB NF at 500MHz Robust under Hard Operating Conditions +8 V, 124 mA Supply 1.3 Applications CATV forward at 50 ~ 1200 MHz CATV reverse at 5 ~ 300 MHz CATV 50 at 50 ~ 1000 MHz Optical Node, FTTH, RFoG 1.4 Package Profile & RoHS Compliance SOT89, 4.5x4.0 mm2, surface mount 1/17 ASB Inc. [email protected] RoHS-compliant January 2014 AWB517 2. Summary on Product Performances 2.1 Typical Performance Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Reverse Forward Unit Frequency 5 50 300 50 500 1000 MHz Noise Figure - 2.1 2.2 2.1 2.3 2.2 dB Gain 17.4 18.0 17.0 18.0 17.5 16.5 dB S11 -18.5 -25.0 -14.0 -17.0 -17.5 -13.5 dB S22 -18.5 -25.0 -11.0 -20.0 -20.0 -16.0 dB CSO1) - 61 dBc CTB1) - 74 dBc Current 124 mA Device Voltage +8 V 1) Pout = 101 dBV for CENELEC-42. 2.2 Product Specification Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Min Typ Frequency 500 Noise Figure 2.3 Unit MHz 2.6 dB Gain 16.5 17.5 dB S11 -15 -17.5 dB S22 -17 -20.0 dB Current 104 124 Device Voltage 2.3 2/17 Max +8 144 mA V Pin Configuration Pin Description 1 RF_IN 2 Ground 3 RF_OUT & Bias ASB Inc. Simplified Outline [email protected] January 2014 AWB517 2.4 Absolute Maximum Ratings Parameters Max. Ratings Operation Case Temperature -40 to 85 C Storage Temperature -40 to 150 C Device Voltage +9 V Maximum Current 220 mA Operation Junction Temperature +150 C Input RF Power (CW, 75 matched) +25 dBm 2.5 Thermal Resistance Symbol Description Typ Unit Rth Thermal resistance from junction to lead 42 C/W 2.6 ESD Classification & Moisture Sensitivity Level ESD Classification HBM Class 1B Voltage Level: 750 V MM Class A Voltage Level: 100 V CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. Moisture Sensitivity Level MSL 3 at 260 C reflow (Intentionally Blanked) 3/17 ASB Inc. [email protected] January 2014 AWB517 3. Application: 50 ~ 1000 MHz (CATV forward, Vsupply = +8 V) 3.1 Application Circuit & Evaluation Board Vdevice = +8 V C4 L1 RF IN L2 C1 L3 C2 RF OUT AWB517 C3 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A10 Bill of Material 4/17 Symbol Value Size Description Manufacturer AWB517 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 0.5 pF 0603 Matching capacitor Murata C4 10 F 0805 Decoupling capacitor Murata L1 1 H 1206 RF choke inductor Murata L2 8.2 nH 0603 Matching inductor Murata L3 4.7 nH 0603 Matching inductor Murata ASB Inc. [email protected] January 2014 AWB517 3.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Forward Unit Frequency 50 500 860 1000 MHz Noise Figure 2.1 2.2 2.3 2.2 dB Gain 18.0 17.5 17.0 16.5 dB S11 -17.0 -17.5 -16.0 -13.5 dB S22 -20.0 -20.0 -16.0 -16.0 dB CSO1) 61 dBc CTB1) 74 dBc Current 124 mA Device Voltage +8 1) Pout = 101 dBV for CENELEC-42. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S11 S12 S22 K 0 5/17 200 ASB Inc. 400 600 800 Frequency (MHz) [email protected] 1000 10 9 8 7 6 5 4 3 2 1 0 1200 Stability Factor, K Plot of S-parameter & Stability Factor S-parameters (dB) 3.3 V January 2014 AWB517 3.4 Plots of Noise Figure and Performances with Temperature 19 5 18 4 Gain (dB) NF (dB) 17 3 NF 2 1 15 -40 °C 14 +25 °C 13 +85 °C 12 0 0 200 400 600 800 Frequency (MHz) 1000 0 1200 0 200 400 600 800 Frequency (MHz) 1000 1200 0 -10 S22 (dB) -10 S11 (dB) 16 -20 -40 °C -20 -30 -40 °C +25 °C -30 +25 °C -40 +85 °C +85 °C -40 -50 0 200 400 600 800 Frequency (MHz) 1000 1200 0 135 200 400 600 800 Frequency (MHz) 1000 1200 25 Frequency = 500 MHz 20 Gain (dB) Current (mA) 130 125 120 115 10 5 110 0 -60 6/17 15 -40 -20 0 20 40 Temperature (°C) 60 80 100 ASB Inc. -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 January 2014 AWB517 5 Frequency = 500 MHz NF (dB) 4 3 2 1 0 -60 -40 -20 0 20 40 Temperature (°C) 60 80 100 (Intentionally Blanked) 7/17 ASB Inc. [email protected] January 2014 AWB517 4. Application: 50 ~ 1200 MHz (CATV forward, Vsupply = +8 V) 4.1 Application Circuit & Evaluation Board Vdevice = +8 V C5 L2 C3 C1 L3 L1 RF IN C4 RF OUT AWB517 C2 R1 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A10 Bill of Material 8/17 Symbol Value Size Description Manufacturer AWB517 - - MMIC Amplifier ASB C1, C4 1 F 0603 DC blocking capacitor Murata C2 0.5 pF 0603 Matching capacitor Murata C3 33 pF 0603 Matching capacitor Murata C5 10 F 0805 Decoupling capacitor Murata L1 6.8 nH 0603 Matching inductor Murata L2 1 H 1026 RF choke inductor Murata L3 5.6 nH 0603 Matching inductor Murata R1 15 0603 Matching resistor Samsung ASB Inc. [email protected] January 2014 AWB517 4.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Forward Frequency 50 500 1002 1200 MHz Noise Figure 3.1 2.3 2.0 2.3 dB Gain 17.1 17.1 16.2 15.6 dB S11 -16.5 -15.0 -19.1 -17.3 dB S22 -17.6 -26.0 -15.7 -12.7 dB Current 124 mA Device Voltage +8 V S21 S11 S12 S22 200 ASB Inc. K 400 600 800 Frequency (MHz) [email protected] 1000 10 9 8 7 6 5 4 3 2 1 0 1200 Stability Factor, K 40 30 20 10 0 -10 -20 -30 -40 -50 -60 0 9/17 Unit Plot of S-parameter & Stability Factor S-parameters (dB) 4.3 Parameter January 2014 AWB517 5. Application: 5 ~ 300 MHz (CATV reverse, Vsupply = +8 V) 5.1 Application Circuit & Evaluation Board Vdevice = +8 V C3 L1 C2 C1 RF IN RF OUT AWB517 L2 L3 R1 R2 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-B2 Bill of Material 10/17 Symbol Value Size Description Manufacturer AWB517 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 10 F 0805 Decoupling capacitor Murata L1 22 H 1206 RF choke inductor Murata L2 4.7 H 0603 Matching inductor Samsung L3 6.8 H 0603 Matching inductor Samsung R1 180 0603 Matching resistor Samsung R2 240 0603 Matching resistor Samsung ASB Inc. [email protected] January 2014 AWB517 5.2 Performance Table Supply voltage = +8 V, TA = +25 C, ZO = 75 Parameter Reverse Frequency 5 50 300 MHz Noise Figure - 2.1 2.2 dB Gain 17.4 18.0 17.0 dB S11 -18.5 -25.0 -14.0 dB S22 -18.5 -25.0 -11.0 dB Output P1dB Unit 23 25 25 dBm Output IP31) 37.5 41.5 42.0 dBm Output IP21), 2) 56 56 58 dBm Current 124 mA Device Voltage +8 V 1) OIP3 and OIP2 are measured with two tones at the output power of +10 dBm/tone separated by 1 MHz. 2) OIP2 is measured at F1+F2 Frequency. 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S22 S11 S12 K 0 11/17 10 9 8 7 6 5 4 3 2 1 0 50 ASB Inc. 100 150 200 Frequency (MHz) [email protected] 250 Stability Factor, K Plot of S-parameter & Stability Factor S-parameters (dB) 5.3 300 January 2014 AWB517 Plots of Noise Figure and Performances with Temperature 5 20 4 19 Gain (dB) NF (dB) 5.4 3 NF 2 18 17 -40 °C 16 +25 °C 1 15 +85 °C 14 0 0 50 100 150 200 Frequency (MHz) 250 0 300 0 50 100 150 200 Frequency (MHz) 250 300 0 -5 S22 (dB) S11 (dB) -10 -20 -40 °C -10 -15 -40 °C -20 +25 °C +25 °C -30 -25 +85 °C -40 +85 °C -30 0 50 100 150 200 Frequency (MHz) 250 300 0 135 25 130 20 50 100 150 200 Frequency (MHz) 250 300 Gain (dB) Current (mA) Frequency = 50 MHz 125 120 115 10 5 110 0 -60 12/17 15 -40 -20 0 20 40 Temperature (°C) 60 80 100 ASB Inc. -60 [email protected] -40 -20 0 20 40 Temperature (°C) 60 80 100 January 2014 AWB517 4 Frequency = 50 MHz NF (dB) 3 2 1 0 -60 -40 -20 0 20 40 Temperature (°C) 60 80 100 (Intentionally Blanked) 13/17 ASB Inc. [email protected] January 2014 AWB517 6. Application: 50 ~ 1000 MHz (CATV 50 , Vsupply = +6.5 V) 6.1 Application Circuit & Evaluation Board Vdevice = +6.5 V C4 R1 L1 C1 C2 RF IN RF OUT AWB517 R2 C3 PCB Information Material FR4 Thickness (mm) 0.8 Size (mm) 40x40 EB No. EB-89-A8 Bill of Material 14/17 Symbol Value Size Description Manufacturer AWB517 - - MMIC Amplifier ASB C1, C2 1 F 0603 DC blocking capacitor Murata C3 1 F 0603 Feedback capacitor Murata C4 10 F 0805 Decoupling capacitor Murata L1 1 H 1206 RF choke inductor Murata R1 6.2 k 0603 Matching resistor Samsung R2 560 0603 Matching resistor Samsung ASB Inc. [email protected] January 2014 AWB517 6.2 Performance Table Supply voltage = +6.5 V, TA = +25 C, ZO = 50 Parameter Reverse Frequency 50 500 1000 MHz Noise Figure 2.8 3.0 3.1 dB Gain 14.1 13.9 13.6 dB S11 -19 -18 -14 dB S22 -19 -20 -15 dB Output P1dB 24 24 24 dBm IP31) 44 45 43 dBm Output Current Unit 164 mA Device Voltage +6.5 V 1) OIP3 is measured with two tones at the output power of +11 dBm/tone separated by 1 MHz. Plot of S-parameter & Stability Factor 40 30 20 10 0 -10 -20 -30 -40 -50 -60 S21 S22 K 0 15/17 S11 S12 200 400 600 800 Frequency (MHz) ASB Inc. [email protected] 1000 10 9 8 7 6 5 4 3 2 1 0 1200 Stability Factor, K S-parameters (dB) 6.3 January 2014 AWB517 7. Package Outline (SOT89, 4.5x4.0x1.5 mm) Part No. Lot No. Symbols A L b b1 C D D1 E E1 e1 H S e AWB517 Pxxxx Dimensions (In mm) MIN NOM 1.40 1.50 0.89 1.04 0.36 0.42 0.41 0.47 0.38 0.40 4.40 4.50 1.40 1.60 3.64 --2.40 2.50 2.90 3.00 0.35 0.40 0.65 0.75 1.40 1.50 MAX 1.60 1.20 0.48 0.53 0.43 4.60 1.75 4.25 2.60 3.10 0.45 0.85 1.60 8. Surface Mount Recommendation (In mm) NOTE 1. The number and size of ground via holes in a circuit board are critical for thermal and RF grounding considerations. 2. Recommended is that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better RF and thermal performance, as shown in the drawing at the left side. 16/17 ASB Inc. [email protected] January 2014 AWB517 9. Recommended Soldering Reflow Profile 260 C 20~40 sec Ramp-up (3 C/sec) Ramp-down (6 C/sec) 200 C 150 C 60~180 sec 10. Family Products Information ASB’s AWB-series single-ended CATV amplifiers are available in different gain levels such as 12 dB, 17 dB, and 20 dB in which they are categorized by two groups according to the device voltage, 5 V and 8 V, so that a user can select the amplifier for different gain stages to design their system with ease. In addition, AWB3xx group for 5 V and AWB5xx group for 8 V are provided by almost the same external matching circuit and in a SOT89 package. Part Number Description Package Type AWB312 5 ~ 6 V, 12 dB gain CATV amplifier SOT89 AWB317 5 V, 17 dB gain CATV amplifier SOT89 AWB319 5 V, 20 dB gain CATV amplifier SOT89 AWB512 8 V, 12 dB gain CATV amplifier SOT89 AWB517 8 V, 17 dB gain CATV amplifier SOT89 AWB519 8 V, 20 dB gain CATV amplifier SOT89 (End of Datasheet) 17/17 ASB Inc. [email protected] January 2014