NVTFS5C453NL Power MOSFET 40 V, 3.1 mW, 107 A, Single N−Channel Features • • • • • • Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5C453NLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 3.1 mW @ 10 V 40 V 107 A 5.2 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 107 A Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1 & 2) Pulsed Drain Current 75 PD Steady State TA = 100°C TA = 25°C G (4) W 68 S (1,2,3) A 23 PD 1.6 IDM 740 A −55 to +175 °C IS 76 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 7 A) EAS 215 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM W 3.3 TJ, Tstg Operating Junction and Storage Temperature N−CHANNEL MOSFET 16 TA = 100°C TA = 25°C, tp = 10 ms D (5) 34 ID ID MAX 1 WDFN8 (m8FL) CASE 511AB XXXX A Y WW G 1 S S S G XXXX AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Symbol Value Unit Junction−to−Case − Steady State RqJC 2.2 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 46 See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 February, 2017 − Rev. 1 1 Publication Order Number: NVTFS5C453NL/D NVTFS5C453NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 1.6 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.3 VGS = 10 V ID = 40 A 2.6 3.1 VGS = 4.5 V ID = 40 A 4.1 5.2 gFS VDS = 15 V, ID = 40 A V mV/°C 120 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2100 VGS = 0 V, f = 1 MHz, VDS = 25 V 1000 pF 42 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V; ID = 40 A Total Gate Charge QG(TOT) 16 Threshold Gate Charge QG(TH) 4.0 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.0 Plateau Voltage VGP 3.2 td(ON) 11 VGS = 4.5 V, VDS = 20 V; ID = 40 A 35 nC 7.0 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 20 V, ID = 40 A, RG = 2.5 W tf 110 ns 21 5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 40 A TJ = 25°C 0.84 TJ = 125°C 0.72 tRR ta tb 1.2 V 41 VGS = 0 V, dIS/dt = 100 A/ms, IS = 40 A QRR 19 ns 22 30 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVTFS5C453NL TYPICAL CHARACTERISTICS 300 300 4.0 V ID, DRAIN CURRENT (A) 250 ID, DRAIN CURRENT (A) VDS = 5 V 4.5 V to 10 V 3.8 V 200 3.6 V 150 3.4 V 100 3.2 V 50 3.0 V 2.8 V 2.6 V 250 200 150 100 TJ = 25°C 50 0 3 4 5 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics TJ = 25°C ID = 40 A 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 6 TJ = 25°C 5 VGS = 4.5 V 4 3 VGS = 10 V 2 1 0 50 100 150 200 250 300 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 1.9 VGS = 10 V ID = 40 A IDSS, LEAKAGE (nA) 1.7 2 VGS, GATE−TO−SOURCE VOLTAGE (V) 6.0 3 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE TJ = −55°C TJ = 125°C 0 0 1.5 1.3 1.1 TJ = 150°C 10000 TJ = 125°C 1000 TJ = 85°C 100 0.9 10 0.7 −50 −25 0 25 50 75 100 125 150 175 5 15 25 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVTFS5C453NL TYPICAL CHARACTERISTICS 30 C, CAPACITANCE (pF) 10 CISS 1000 COSS 100 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 10 0 10 20 30 40 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) 10000 QT 25 8 20 6 15 QGD QGS 4 10 VDS = 20 V TJ = 25°C ID = 40 A 2 0 0 10 20 5 0 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1000.0 td(off) tf 100.0 t, TIME (ns) IS, SOURCE CURRENT (A) tr td(on) 10.0 VGS = 4.5 V VDD = 20 V ID = 40 A 1.0 1 10 10.0 TJ = 25°C TJ = −55°C 1.0 100 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 100 10 1 0.1 0.01 0.1 IPEAK, (A) ID, DRAIN CURRENT (A) TJ = 125°C 500 ms TC = 25°C VGS ≤ 10 V Single Pulse 1 ms TJ = 25°C 10 TJ = 100°C 10 ms RDS(on) Limit Thermal Limit Package Limit 1 10 1 1E−4 100 1E−3 VDS (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 10E−2 NVTFS5C453NL TYPICAL CHARACTERISTICS 100 RqJA (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Marking Package Shipping† NVTFS5C453NLTAG 453L WDFN8 (Pb−Free) 1500 / Tape & Reel NVTFS5C453NLWFTAG 53LW WDFN8 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVTFS5C453NL PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A B D1 2X 0.20 C 8 7 6 5 4X q E1 E c 1 2 3 4 A1 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 6X C e SEATING PLANE DETAIL A 8X e/2 L 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* 1 E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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