SEMICONDUCTOR RoHS NKD110A/NKJ110A/NKC110A/NKE110A Series RoHS Nell High Power Products Standard Recovery Diodes, 110A (ADD-A-PAK Power Modules) 80 3 4 5 21 7 2-Ø6.4 2 6 1 15 20 20 15 92 ADD-A-PAK 68 3-M5 SCREWS 18 5 6 31 High voltage 3000 V RMS isolating voltage lndustrial standard package UL approved file E320098 Glass passivated chips Low thermal resistance Designed and qualified for industrial level Compliant to RoHs 29.5 FEATURES All dimensions in millimeters MECHANICAL DESCRIPTION BENEFITS Excellent thermal performances obtained by the usage of exposed direct bonded copper substrate Up to 1600V High surge capability Easy mounting on heatsink The new generation of ADD-A-PAK module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with minimized number of interfaces. ELECTRICAL DESCRIPTION (APPLICATIONS) These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. PRODUCT SUMMARY IF(AV) 110A Type Modules-Diode, High Voltage 1 2 3 NKD 1 2 3 NKJ 1 2 3 NKC 2 3 NKE MAJOR RATINGS AND CHARACTERISTICS SYMBOL I F(AV) CHARACTERISTICS T C = 100°C I 2t 173 50 HZ 2600 60 HZ 2722 50 HZ 33.8 60 HZ 30.7 I 2√t V RRM Range tJ T stg www.nellsemi.com UNIT 110 I F(RMS) I FSM VALUES Page 1 of 6 A kA 2 s 338 kA 2√s 400 to 1600 V -40 to 150 ºC RoHS NKD110A/NKJ110A/NKC110A/NKE110A Series RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 NKD110..A NKJ110..A NKC110..A NKE110..A 08 800 900 12 1200 1300 14 1400 1500 16 1600 1700 lRRM, MAXIMUM AT TJ = 150°C mA 8 FORWARD CONDUCTION SYMBOL PARAMETER Maximum average forward current at case temperature I F(AV) I F(RMS) Maximum RMS forward current TEST CONDITIONS I FSM non-reptitive surge current t = 8.3ms t = 10ms t = 8.3ms t = 10ms Maximum I 2√t for fusing 100 ºC 173 A No voltage reapplied 2600 100%V RRM reapplied 2189 2722 No voltage reapplied Sinusoidal half wave, 2291 initial T J = T J maximum 33.8 30.7 100%V RRM reapplied 23.9 t = 0.1 to 10 ms, no voltage reapplied 338 t = 8.3ms l 2√t A A t = 8.3ms I 2t 110 DC at 100°C case temperature t = 10ms Maximum l 2 t for fusing UNIT 180° conduction, half sine wave t = 10ms Maximum peak, one-cycle forward, VALUES 21.8 Low level value of threshold voltage V F(TO)1 (16.7% x π x l F(AV) < I < π x l F(AV) ),T J =T J maximum 0.78 High level value of threshold voltage V F(TO)2 (I > π x l F(AV) ),T J = T J maximum 0.92 r f1 (16.7% x π x l F(AV) < I < π x l F(AV) ),T J = T J maximum High level value of forward slope resistance r f2 (I > π x l F(AV) ), T J = T J maximum 1.65 l FM =330A, T J = 25°C , t p = 400 µs square wave 1.35 V FM kA 2√s V Low level value of forward slope resistance Maximum forward voltage drop kA 2 s 2.0 mΩ V BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse leakage current l RRM T J = 150°C Maximum RMS insulation Voltage VINS 50 Hz www.nellsemi.com Page 2 of 6 VALUES UNITS 8 mA 3000 (1 min) 3600 (1 s) V SEMICONDUCTOR RoHS NKD110A/NKJ110A/NKC110A/NKE110A Series RoHS Nell High Power Products THERMAL AND MECHANICAL SPECIFICATIONS SYMBOL PARAMETER TEST CONDITIONS T J ,T stg Junction and storage temperature range Maximum internal thermal resistance, junction to case per leg R thJC DC operation R thCS Mounting surface flat, smooth and greased VALUES UNIT -40 to 150 °C 0.18 °C/W Typical thermal resistance, case to heatsink per module A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. to heatsink, M6 Mounting force, ±10% 0.1 busbar, M5 4 Nm 3 Approximate weight Case style 115 g 4.06 oz. ADD-A-PAK (TO-240AA) JEDEC ΔRthJC CONDUCTION SINE HALF WAVE CONDUCTION DEVICES NKD110/NKJ110 NKC110/NKE110 RECTANGULAR WAVE CONDUCTION 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° 0.039 0.048 0.061 0.085 0.152 0.030 0.062 0.080 0.106 0.152 Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Ordering Information Tabel Device code 110 1 2 / 16 A 3 4 2 - Module type, NKD, NKJ, NKC for ( Diode + Diode ) module NKE for single diode - Current rating : IF(AV) 3 - Voltage code x 100 = VRRM 4 - Assembly type, ''A'' for soldering type 1 www.nellsemi.com NKD Page 3 of 6 UNITS °C/W RoHS NKD110A/NKJ110A/NKC110A/NKE110A Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 Current ratings characteristics Fig.2 Current ratings characteristics 150 150 R thJC (DC) = 0.18°C/W Maximum allowable case temperature(˚C) Maximum allowable case temperature(˚C) R thJC (DC) = 0.18°C/W 140 Conduction Angle 130 120 110 60° 30° 100 0 20 40 60 90° 120° 80 120 110 30° 60° 100 100 90° 120° 180° DC 90 120 0 50 100 150 200 Average forward current (A) Average forward current (A) Fig.3 Forward Power Loss characteristics Fig.4 On-state power loss characteristics 200 180° 140 Maximum average forward power loss (W) 90° 120 60° 30° 100 RMS Limit 80 60 40 Conduction Angle 20 0 180° 180 120° Per leg, T j = 150°C 120° 160 90° 140 60° 30° DC 120 100 RMS Limit 80 60 40 Conduction Period 20 Per leg, T j = 150°C 0 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 Average forward current (A) Average forward current (A) Fig.5 Maximum non-repetitive surge current Fig.6 Maximum non-repetitive surge current 3000 2400 At Any Rated Load Condition And With Rated V RRM Applied Following Surge initial T J = T J max @ 60Hz 0.0083 s @ 50Hz 0.0100 s 2100 1800 Peak half sine wave forward current (A) Maximum average forward power loss (W) Conduction Period 130 180° 160 Peak half sine wave forward current (A) 140 1500 1200 900 Per leg 600 300 10 1 2400 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T J = 150°C, @50Hz No Voltage Reapplied Rated V RRM Reapplied 2100 1800 1500 1200 900 600 300 0.01 100 Number of equal amplitude half cycle current pulses (N) www.nellsemi.com 2700 Per leg 0.1 Pulse train duration (S) Page 4 of 6 1 SEMICONDUCTOR RoHS NKD110A/NKJ110A/NKC110A/NKE110A Series RoHS Nell High Power Products 0 180 0 0 80 0 60 0 40 NKD110 Series 0 Per leg T j = 150°C 0 20 25 50 /W °C .1 =0 0 100 0 0 0. 5° C/ W 0 120 SA 180° (sine) 140 R th DC 160 W C/ 3° 0. Maximum total forward power loss (W) Fig.7 Forward power loss characteristics 200 0.7 °C /W 1°C /W 1.5 °C/ W 3 °C/W 75 100 125 150 175 200 20 Total RMS current (A) 40 60 80 100 120 140 160 Maximum allowable ambient temperature (°C) Fig.8 Forward power loss characteristics Maximum total power loss (W) 700 600 180° (sine) 180° (rect) 500 R th SA 400 300 200 2 x NKD110 Series single phase bridge connected T j = 150°C 100 0 0 50 100 150 200 250 20 Total output current (A) = 0. 1 0.3 °C /W 0.4 0.5 °C/W °C/ 0.7° W C/W 1°C/W 1.5 °C /W 3 °C/W 40 °C /W 60 80 100 120 140 160 Maximum allowable ambient temperature (°C) Fig.9 Forward power loss characteristics 800 120° (rect) 700 A hS Rt 600 = 1 0. 500 400 300 200 3 x NKD110 Series three phase bridge connected T j = 150°C 100 /W °C Maximum total power loss (W) 900 0.2 °C /W 0.3 °C/ W 0.5 °C/W 0.7 ° C/W 1 °C/W 3 °C/W 0 0 50 100 150 200 250 300 350 20 Total output current (A) www.nellsemi.com 40 60 80 100 120 140 160 Maximum allowable ambient temperature (°C) Page 5 of 6 SEMICONDUCTOR RoHS NKD110A/NKJ110A/NKC110A/NKE110A Series RoHS Nell High Power Products Fig.10 Forward voltage characteristics lnstantaneous forward current(A) 1000 Per leg 100 10 T j = 150°C T j = 25°C 1 0 0.5 1.0 1.5 2.0 2.5 3.0 lnstantaneous forward voltage (V) Transient thermal lmpedance Z thJC (°C/W) Fig.11 Thermal lmpedance Z thJC characteristics 1 Steady state value R thJC = 0.45 °C/W (DC operation) 0.1 Per leg 0.01 0.001 0.01 0.1 Square wave pulse duration(S) www.nellsemi.com Page 6 of 6 1 10