Infineon IGZ100N65H5 650v igbt high speed series fifth generation Datasheet

IGBT
Highspeed5IGBTinTRENCHSTOPTM5technology
IGZ100N65H5
650VIGBThighspeedseriesfifthgeneration
Datasheet
IndustrialPowerControl
IGZ100N65H5
Highspeedseriesfifthgeneration
Highspeed5IGBTinTRENCHSTOPTM5technology
FeaturesandBenefits:
HighspeedH5technologyoffering
•UltralowlossswitchingthankstoKelvinemitterpinin
combinationwithTRENCHSTOPTM5
•Best-in-classefficiencyinhardswitchingandresonant
topologies
•PlugandplayreplacementofpreviousgenerationIGBTs
•650Vbreakdownvoltage
•LowgatechargeQG
•Maximumjunctiontemperature175°C
•QualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications
•Uninterruptiblepowersupplies
•Weldingconverters
•Midtohighrangeswitchingfrequencyconverters
•Solarstringinverters
Packagepindefinition:
•PinC&backside-collector
•PinE-emitter
•PinK-Kelvinemitter
•PinG-gate
Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.
KeyPerformanceandPackageParameters
Type
IGZ100N65H5
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
650V
100A
1.65V
175°C
G100EH5
PG-TO247-4
2
Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
3
Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
650
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
161.0
101.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax1)
ICpuls
400.0
A
Turn off safe operating area
VCE≤650V,Tvj≤175°C,tp=1µs1)
-
400.0
A
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
±20
±30
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
536.0
268.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.28
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
650
-
-
-
1.65
1.82
1.90
2.10
-
3.2
4.0
4.8
Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA
Collector-emitter saturation voltage VCEsat
VGE=15.0V,IC=100.0A
Tvj=25°C
Tvj=100°C
Tvj=150°C
V
V
Gate-emitter threshold voltage
VGE(th)
IC=1.00mA,VCE=VGE
Zero gate voltage collector current
ICES
VCE=650V,VGE=0V
Tvj=25°C
Tvj=175°C
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=100.0A
-
200.0
-
S
1)
100.0
1100.0
-
V
µA
Defined by design. Not subject to production test.
4
Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
6560
-
-
97
-
-
21
-
-
210.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=520V,IC=100.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
30
-
ns
-
9
-
ns
-
421
-
ns
-
15
-
ns
-
0.85
-
mJ
-
0.77
-
mJ
-
1.62
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Tvj=25°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=8.0Ω,RG(off)=18.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ75N65EH5.
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
28
-
ns
-
12
-
ns
-
468
-
ns
-
17
-
ns
-
1.43
-
mJ
-
0.76
-
mJ
-
2.19
-
mJ
IGBTCharacteristic,atTvj=150°C
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
Tvj=150°C,
VCC=400V,IC=50.0A,
VGE=0.0/15.0V,
RG(on)=8.0Ω,RG(off)=18.0Ω,
Lσ=30nH,Cσ=25pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery. Diode
from IKZ75N65EH5.
The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin.
5
Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
600
500
Ptot,POWERDISSIPATION[W]
IC,COLLECTORCURRENT[A]
100
10
1
400
300
200
100
not for linear use
0.1
1
10
100
0
1000
25
50
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs,
ICmaxdefinedbydesign-notsubjectto
production test)
100
125
150
175
Figure 2. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
160
400
360
140
320
120
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
75
TC,CASETEMPERATURE[°C]
100
80
60
40
VGE = 20V
18V
280
15V
12V
240
10V
7V
200
6V
160
5V
4V
120
80
20
0
40
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
Figure 4. Typicaloutputcharacteristic
(Tvj=25°C)
6
Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
400
400
360
360
320
VGE = 20V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
320
18V
280
14V
12V
240
9V
8V
200
6V
160
5V
120
280
240
200
160
120
80
80
40
40
0
0.0
0.5
1.0
Tvj = 25°C
Tvj = 175°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
2
VCE,COLLECTOR-EMITTERVOLTAGE[V]
4
5
6
7
8
9
10
VGE,GATE-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=175°C)
Figure 6. Typicaltransfercharacteristic
(VCE=20V)
2.50
1000
IC = 25A
IC = 50A
IC = 100A
2.25
2.00
t,SWITCHINGTIMES[ns]
VCEsat,COLLECTOR-EMITTERSATURATION[V]
3
1.75
1.50
1.25
100
10
1.00
td(off)
tf
td(on)
tr
0.75
0.50
25
50
75
100
125
150
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
0
50
100
150
200
250
300
IC,COLLECTORCURRENT[A]
Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof
afunctionofjunctiontemperature
collectorcurrent
(VGE=15V)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=8Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
7
Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
10
100
10
td(off)
tf
td(on)
tr
1
0
10
20
30
40
1
50
25
RG,GATERESISTANCE[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=50A,dynamictestcircuitin
Figure E)
100
125
150
175
12
typ.
min.
max.
5.5
Eoff
Eon
Ets
11
E,SWITCHINGENERGYLOSSES[mJ]
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
75
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=50A,RG(on)=8Ω,RG(off)=18Ω,dynamictest
circuit in Figure E)
6.0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
50
Tvj,JUNCTIONTEMPERATURE[°C]
10
9
8
7
6
5
4
3
2
1
25
50
75
100
125
0
150
Tvj,JUNCTIONTEMPERATURE[°C]
0
50
100
150
200
250
300
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=1mA)
8
Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,RG(on)=8Ω,RG(off)=18Ω,dynamic
test circuit in Figure E)
Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
6.0
2.50
Eoff
Eon
Ets
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.5
0.0
Eoff
Eon
Ets
2.25
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
5.5
0
10
20
30
40
0.00
50
25
RG,GATERESISTANCE[Ω]
Figure 13. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=150°C,VCE=400V,
VGE=0/15V,IC=50A,dynamictestcircuitin
Figure E)
125
150
175
VCE = 130V
VCE = 520V
14
VGE,GATE-EMITTERVOLTAGE[V]
E,SWITCHINGENERGYLOSSES[mJ]
100
16
Eoff
Eon
Ets
2.00
1.75
1.50
1.25
1.00
0.75
0.50
12
10
8
6
4
2
0.25
0.00
200
75
Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=50A,RG(on)=8Ω,RG(off)=18Ω,dynamictest
circuit in Figure E)
2.50
2.25
50
Tvj,JUNCTIONTEMPERATURE[°C]
225
250
275
300
325
350
375
0
400
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=150°C,VGE=0/15V,
IC=50A,RG(on)=8Ω,RG(off)=18Ω,dynamictest
circuit in Figure E)
0
25
50
75
100 125 150 175 200 225 250
QG,GATECHARGE[nC]
Figure 16. Typicalgatecharge
(IC=100A)
9
Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
C,CAPACITANCE[pF]
1E+4
1000
100
Cies
Coes
Cres
10
0
5
10
15
20
25
0.2
0.1
0.05
0.02
0.01
single pulse
0.01
0.001
1E-6
30
VCE,COLLECTOR-EMITTERVOLTAGE[V]
D = 0.5
0.1
i:
1
2
3
4
5
6
ri[K/W]: 4.7E-3 0.056403 0.049642 0.154033 0.012425 1.7E-3
τi[s]:
2.7E-5 2.5E-4
2.2E-3
0.014179 0.120087 1.91251
1E-5
1E-4
0.001
0.01
0.1
tp,PULSEWIDTH[s]
Figure 17. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
Figure 18. IGBTtransientthermalimpedance
(D=tp/T)
10
Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
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Rev.2.1,2014-10-31
IGZ100N65H5
Highspeedseriesfifthgeneration
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
parasitic
relief
on
=
VCE x IC x dt
2% VCE
t3
t2
t3
t4
t
12
Rev.2.1,2014-10-31
IGZ100N65H5
High speed series fifth generation
Revision History
IGZ100N65H5
Revision: 2014-10-31, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2014-10-17
Preliminary data sheet
2.1
2014-10-31
Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
13
Rev. 2.1, 2014-10-31
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