IGBT Highspeed5IGBTinTRENCHSTOPTM5technology IGZ100N65H5 650VIGBThighspeedseriesfifthgeneration Datasheet IndustrialPowerControl IGZ100N65H5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technology FeaturesandBenefits: HighspeedH5technologyoffering •UltralowlossswitchingthankstoKelvinemitterpinin combinationwithTRENCHSTOPTM5 •Best-in-classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ Applications •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters •Solarstringinverters Packagepindefinition: •PinC&backside-collector •PinE-emitter •PinK-Kelvinemitter •PinG-gate Pleasenote:TheemitterandKelvinemitterpinsarenot exchangeable.Theirexchangemightleadtomalfunction. KeyPerformanceandPackageParameters Type IGZ100N65H5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 100A 1.65V 175°C G100EH5 PG-TO247-4 2 Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 3 Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 161.0 101.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 400.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 400.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 536.0 268.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.28 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 650 - - - 1.65 1.82 1.90 2.10 - 3.2 4.0 4.8 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=100.0A Tvj=25°C Tvj=100°C Tvj=150°C V V Gate-emitter threshold voltage VGE(th) IC=1.00mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=100.0A - 200.0 - S 1) 100.0 1100.0 - V µA Defined by design. Not subject to production test. 4 Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 6560 - - 97 - - 21 - - 210.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance1) measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=100.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 30 - ns - 9 - ns - 421 - ns - 15 - ns - 0.85 - mJ - 0.77 - mJ - 1.62 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=18.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKZ75N65EH5. SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 28 - ns - 12 - ns - 468 - ns - 17 - ns - 1.43 - mJ - 0.76 - mJ - 2.19 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) Tvj=150°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=8.0Ω,RG(off)=18.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Diode from IKZ75N65EH5. The internal emitter inductance does not affect the gate control circuitry if bypassed by using the emitter sense pin. 5 Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration 600 500 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 100 10 1 400 300 200 100 not for linear use 0.1 1 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs, ICmaxdefinedbydesign-notsubjectto production test) 100 125 150 175 Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 160 400 360 140 320 120 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 75 TC,CASETEMPERATURE[°C] 100 80 60 40 VGE = 20V 18V 280 15V 12V 240 10V 7V 200 6V 160 5V 4V 120 80 20 0 40 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 6 Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration 400 400 360 360 320 VGE = 20V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 320 18V 280 14V 12V 240 9V 8V 200 6V 160 5V 120 280 240 200 160 120 80 80 40 40 0 0.0 0.5 1.0 Tvj = 25°C Tvj = 175°C 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 4 5 6 7 8 9 10 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=175°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 2.50 1000 IC = 25A IC = 50A IC = 100A 2.25 2.00 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 3 1.75 1.50 1.25 100 10 1.00 td(off) tf td(on) tr 0.75 0.50 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 50 100 150 200 250 300 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=8Ω,RG(off)=18Ω,dynamic test circuit in Figure E) 7 Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] 1000 100 10 100 10 td(off) tf td(on) tr 1 0 10 20 30 40 1 50 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=50A,dynamictestcircuitin Figure E) 100 125 150 175 12 typ. min. max. 5.5 Eoff Eon Ets 11 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,RG(on)=8Ω,RG(off)=18Ω,dynamictest circuit in Figure E) 6.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 10 9 8 7 6 5 4 3 2 1 25 50 75 100 125 0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 50 100 150 200 250 300 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=1mA) 8 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=8Ω,RG(off)=18Ω,dynamic test circuit in Figure E) Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration 6.0 2.50 Eoff Eon Ets 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.5 0.0 Eoff Eon Ets 2.25 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 5.5 0 10 20 30 40 0.00 50 25 RG,GATERESISTANCE[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=50A,dynamictestcircuitin Figure E) 125 150 175 VCE = 130V VCE = 520V 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 100 16 Eoff Eon Ets 2.00 1.75 1.50 1.25 1.00 0.75 0.50 12 10 8 6 4 2 0.25 0.00 200 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,RG(on)=8Ω,RG(off)=18Ω,dynamictest circuit in Figure E) 2.50 2.25 50 Tvj,JUNCTIONTEMPERATURE[°C] 225 250 275 300 325 350 375 0 400 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=50A,RG(on)=8Ω,RG(off)=18Ω,dynamictest circuit in Figure E) 0 25 50 75 100 125 150 175 200 225 250 QG,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=100A) 9 Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] C,CAPACITANCE[pF] 1E+4 1000 100 Cies Coes Cres 10 0 5 10 15 20 25 0.2 0.1 0.05 0.02 0.01 single pulse 0.01 0.001 1E-6 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] D = 0.5 0.1 i: 1 2 3 4 5 6 ri[K/W]: 4.7E-3 0.056403 0.049642 0.154033 0.012425 1.7E-3 τi[s]: 2.7E-5 2.5E-4 2.2E-3 0.014179 0.120087 1.91251 1E-5 1E-4 0.001 0.01 0.1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalimpedance (D=tp/T) 10 Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration 89:;<=>?:> 5 5 10 3 3 3 3 2 2 7 6 01221034356 $'( $%& 987 8"! 789 787 78 8 8!! 8# 8# 8 8# 89 7 8 78" #89 879 8!9 89 8! 98# 89 !8 98 !8" 78 8 789 98" 78!7 8#7 8 87 !8# !89 #8 #8 8 98 8! 8 6 $%& 8 8 8#9 8 7 8 ! 87 8" 8 8!# 8 " 89 8 9 8! 1)*36 $'( 879 8 8"9 897 8# 87" 8"! 89 89! 8!9 899# 87 87 8 87 8" 8## 8#! 89" 8 8!" 87# 87 87! 87 87 " 87!" 11 ,)+034.,3 4" " 7 6)23 99 #8900 3+5,-3.-5,/3)41, 166+3.43 72 27 ! 531161, Rev.2.1,2014-10-31 IGZ100N65H5 Highspeedseriesfifthgeneration vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) CC 2% IC t vCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 parasitic relief on = VCE x IC x dt 2% VCE t3 t2 t3 t4 t 12 Rev.2.1,2014-10-31 IGZ100N65H5 High speed series fifth generation Revision History IGZ100N65H5 Revision: 2014-10-31, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-10-17 Preliminary data sheet 2.1 2014-10-31 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all ? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 13 Rev. 2.1, 2014-10-31