MOSFET SMD Type N-Channel MOSFET AO3416-HF (KO3416-HF) SOT-23-3 ■ Features Unit: mm ● VDS (V) = 20V 0.4 +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ● RDS(ON) ＜ 26mΩ (VGS = 2.5V) 1 ● RDS(ON) ＜ 34mΩ (VGS = 1.8V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8 -0.1 ● ID = 6.5 A (VGS = 4.5V) 2 +0.02 0.15 -0.02 +0.1 0.95 -0.1 +0.1 1.9 -0.2 ● Pb−Free Package May be Available. The G−Suffix Denotes a 1.1 +0.2 -0.1 D Pb−Free Lead Finish 0-0.1 G +0.1 0.68 -0.1 1. Gate 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Continuous Drain Current Ta=25℃ Ta=70℃ Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient IDM Ta=25℃ Ta=70℃ t≤10sec Steady State Thermal Resistance.Junction-to-Foot Junction Temperature Storage Temperature Range ID PD RthJA RthJF Unit V 6.5 5.2 A 30 1.4 0.9 W 90 125 ℃/W 80 TJ 150 Tstg -55 to 150 ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO3416-HF (KO3416-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Test Conditions ID=250uA, VGS=0V Min Typ 20 1 VDS=20V, VGS=0V, Ta=70℃ 5 VDS=0V, VGS=±8V VGS(th) VDS=VGS , ID=250μA 0.4 On-State Drain Current ID(on) VDS =5 V, VGS = 4.5 V 30 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charg Qrr Maximum Body-Diode Continuous Current Diode Forward Voltage *1 Pulse test: PW ≤ 300us duty cycle≤ 2%. ■ Marking Marking 2 gFS AG* F www.kexin.com.cn uA 1.1 V VGS=4.5V, ID=6.5A TJ=125℃ 30 VGS=2.5V, ID=5.5A 26 VDS=5V, ID=6.5A mΩ 34 50 1295 VGS=0V,VDS=10V,f=1MHz 160 VGS=0V,VDS=0V,f=1MHz 1.8 S 1650 pF 87 KΩ 10 VGS=4.5V, VDS=10V, ID=6.5A nC 4.2 2.6 VDS=10V, ,VGEN=4.5V RL=1.54Ω,RG=3Ω IF= 6.5A, dI/dt= 100A/μs 280 328 IS=1.0A,VGS=0V ns 3.76 2.24 31 41 6.8 IS VSD ±10 22 VGS=1.8V, ID=5A Forward Transconductance uA A VGS=4.5V, ID=6.5A RDS(On) Unit V VDS=20V, VGS=0V Gate Threshold Voltage Static Drain-Source On-Resistance Max 0.62 nC 2 A 1 V MOSFET SMD Type N-Channel MOSFET AO3416-HF (KO3416-HF) ■ Typical Characterisitics 30 25 2.5V 25 1.8V 3.1V 20 4.5V 15 ID(A) ID (A) 20 15 VGS=1.5V 10 10 25°C 0 0 0 1 2 3 4 0 5 0.5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 30 VGS=1.8V 20 VGS=2.5V 15 VGS=4.5V Normalized On-Resistance 1.6 25 Ω) RDS(ON) (mΩ 125°C 5 5 VGS=2.5V ID=5.5A 1.4 VGS=1.8V ID=5A 1.2 VGS=4.5V10 ID=6.5A 1 0.8 10 0 2 0 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 60 ID=6.5A 1.0E+00 50 40 1.0E-01 40 125°C 30 IS (A) RDS(ON) (mΩ Ω) VDS=5V 1.0E-02 125°C 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 2 4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO3416-HF (KO3416-HF) ■ Typical Characterisitics 5 1800 VDS=10V ID=6.5A 1600 1400 Capacitance (pF) VGS (Volts) 4 3 2 Ciss 1200 1000 800 600 400 1 Coss 200 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 12 0 5 10 15 VDS (Volts) Figure 8: Ca acitance Characteristics 20 p 10000 100.0 10µs RDS(ON) limited 1ms 1.0 10ms 0.1 100ms TJ(Max)=150°C TA=25°C 0.1 1 VDS (Volts) 10 100 10 10s DC 1 0.0 0.01 TJ(Max)=150°C TA=25°C 1000 100µs Power (W) 10.0 ID (Amps) Crss 0 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) . Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 www.kexin.com.cn 100 1000