CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEA0N10Q8 BVDSS ID RDSON@VGS=10V, ID=4A RDSON@VGS=5.5V, ID=3A 100V 5.6A 76mΩ(typ) 90mΩ(typ) Features • Single Drive Requirement • Fast Switching Characteristic • Repetitive Avalanche Rated • Pb-free lead plating and halogen-free package Symbol Outline MTEA0N10Q8 SOP-8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTEA0N10Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTEA0N10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V,TC=100°C Continuous Drain Current @VGS=10V,TA=25°C Continuous Drain Current @VGS=10V,TA=100°C Pulsed Drain Current Avalanche Current Avalanche Energy @ L=1mH, ID=5.6A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=100℃ Symbol Limits VDS VGS 100 ±20 5.6 4.0 4.0 2.8 30 2 15.6 0.6 6 3 3 1.5 -55~+175 (Note 1) (Note 1) (Note 2) ID (Note 2) (Note 2) (Note 3) IDM IAS EAS EAR (Note 1) (Note 1) (Note 2) PD (Note 2) Operating Junction and Storage Temperature Range Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Symbol Value Unit Thermal Resistance, Junction-to-case, max Rth,j-c 25 °C/W Thermal Resistance, Junction-to-ambient, max (Note 2) Rth,j-a 50 Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. 2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and low duty cycles to keep initial TJ=25°C. Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) MTEA0N10Q8 *1 Min. Typ. Max. Unit 100 2.0 - 3.0 7 76 90 3.5 ±100 1 25 100 130 V V S nA μA mΩ mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=4A VGS=±20V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=125°C VGS =10V, ID=4A VGS =5.5V, ID=3A CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Dynamic Ciss Coss Crss Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. Typ. Max. - 361 54 20 12 1.7 3.8 22 21 64 35 - - 0.8 30 18 4 16 1.2 - Unit Test Conditions pF VGS=0V, VDS=25V, f=1MHz nC VDS=50V, VGS=10V, ID=5.6A ns VDS=50V, ID=1A, VGS=10V, RGS=6Ω A V ns nC IS=4A, VGS=0V IF=4A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTEA0N10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 10V 9V 8V 7V ID, Drain Current (A) 25 BVDSS, Normalized Drain-Source Breakdown Voltage 1.4 30 VGS=6V 20 15 10 VGS=5V 5 1.2 1 0.8 0.6 ID=250μA, VGS=0V 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 10 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1000 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=4.5V VGS=6V 100 VGS=10V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 10 0.01 0.1 1 10 ID, Drain Current(A) 0 100 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 400 2.8 ID=4A 360 R DS(on), Normalized Static DrainSource On-State Resistance R DS(on), Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 320 280 240 200 160 120 80 40 2.4 VGS=10V, ID=4A 2 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 72mΩ typ. 0 0 0 MTEA0N10Q8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss C oss 100 Crss 1.4 ID=250μA 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=80V 10 1 VDS=5V 0.1 Ta=25°C Pulsed 0.01 0.001 VDS=50V 8 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 VDS=20V 6 4 2 ID=5.6A 0 0.01 0.1 1 ID, Drain Current(A) 0 10 2 4 6 8 10 Qg, Total Gate Charge(nC) 12 14 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 7 RDSON Limited 10 ID, Maximum Drain Current(A) 100 ID, Drain Current(A) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 100μ s 1ms 1 10ms 100ms 0.1 TC=25°C, Tj=175°C VGS=10V, θ JC=25°C/W Single Pulse 1s DC 6 5 4 3 2 1 VGS=10V, RθJC=25°C/W 0 0.01 0.1 MTEA0N10Q8 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 TC , Case Temperature(°C) 175 200 CYStek Product Specification Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 1000 30 900 ID, Drain Current(A) Peak Transient Power (W) VDS=10V 25 20 15 10 5 TJ(MAX) =175°C TC=25°C θ JC=25°C/W 800 700 600 500 400 300 200 100 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width(s) Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*Rθ JC(t) 4.RθJC=25 °C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTEA0N10Q8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTEA0N10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTEA0N10Q8 CYStek Product Specification Spec. No. : C871Q8 Issued Date : 2014.06.30 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A Marking: I C B H Device Name Date Code J K E D EA0 N10 Front View Part A Part A M L N 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 O F *: Typical Inches Min. Max. 0.1850 0.2007 0.1457 0.1614 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 0.0472 0.0638 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.70 5.10 3.70 4.10 5.80 6.20 1.27* 0.33 0.51 3.74 3.88 1.20 1.62 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0031 0.0110 0.0157 0.0323 0.0074 0.0102 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.08 0.28 0.40 0.83 0.19 0.26 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTEA0N10Q8 CYStek Product Specification