Thinki MUR1640FCD 16.0 ampere insulated dual doubler ultra fast recovery rectifier Datasheet

MUR1620FCD thru MUR1660FCD
Pb
MUR1620FCD/MUR1640FCD/MUR1660FCD
Pb Free Plating Product
16.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifiers
ITO-220AB
Unit : inch (mm)
.189(4.8)
.165(4.2)
.272(6.9)
.248(6.3)
.406(10.3)
.381(9.7)
.134(3.4)
.118(3.0)
.130(3.3)
.114(2.9)
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.161(4.1)MAX
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
Mechanical Data
Case: ITO-220AB full plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
.1
.1
(2.55)
(2.55)
.543(13.8)
.512(13.0)
.606(15.4)
.583(14.8)
.112(2.85)
.100(2.55)
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.032(.8)
MAX
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "FCT"
Suffix "FCA"
.114(2.9)
.098(2.5)
Doubler
Tandem Polarity
Suffix "FCD"
Case
Series
Tandem Polarity
Suffix "FCS"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL MUR1620FCD
MUR1640FCD MUR1660FCD UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
o
Current TC=100 C (Total Device 2x8A=16A)
16.0
IF(AV)
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
IFSM
175
VF
0.98
A
150
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A (Per Diode/Per Leg)
1.3
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
V
100
μA
μA
5.0
IR
1.7
Maximum Reverse Recovery Time (Note 1)
Trr
35
nS
Typical junction Capacitance (Note 2)
CJ
90
pF
Typical Thermal Resistance (Note 3)
R JC
2.0
℃/W
TJ, TSTG
-55 to + 150
℃
Operating Junction and Storage
Temperature Range
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
MUR1620FCD thru MUR1660FCD
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
200
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
175
150
125
100
75
50
25
0
0
0
50
100
150
1
100
NUMBER OF CYCLES AT 60Hz
o
CASE TEMPERATURE, C
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
80
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
MUR1620FCD
MUR1640FCD
8
MUR1660FCD
0.1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com.tw/
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