IXYS IXTQ32P20T P-channel enhancement mode Datasheet

Preliminary Technical Information
IXTA32P20T
IXTP32P20T
IXTQ32P20T
IXTH32P20T
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
TO-263 AA (IXTA)
VDSS
ID25
RDS(on)
TO-220AB (IXTP)
G
D
S
G
DS
S
D (Tab)
Symbol
Test Conditions
VDSS
TJ = 25°C to 150°C
- 200
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
- 200
V
VGSS
Continuous
+ 15
V
VGSM
Transient
+ 25
V
ID25
TC = 25°C
- 32
A
IDM
TC = 25°C, Pulse Width Limited by TJM
- 96
A
IA
EAS
TC = 25°C
TC = 25°C
- 32
1
A
J
PD
TC = 25°C
300
W
Maximum Ratings
-55 ... +150
150
-55 ... +150
°C
°C
°C
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic body for 10s
300
260
°C
°C
FC
Md
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220, TO-247 & TO-3P)
1.13 / 10
N/lb.
Nm/lb.in.
Weight
TO-263
TO-220
TO-3P
TO-247
2.5
3.0
5.5
6.0
g
g
g
g
G
BVDSS
VGS = 0V, ID = - 250μA
- 200
VGS(th)
VDS = VGS, ID = - 250μA
- 2.0
IGSS
VGS = ± 15V, VDS = 0V
±100 nA
IDSS
VDS = VDSS, VGS = 0V
- 25 μA
-1.25 mA
VGS = -10V, ID = 0.5 • ID25, Note 1
© 2010 IXYS CORPORATION, All Rights Reserved
D (Tab)
D
= Drain
Tab = Drain
z
International Standard Packages
Avalanche Rated
z
Extended FBSOA
z
Fast Intrinsic Diode
z
Low RDS(ON) and QG
z
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
V
z
TJ = 125°C
S
Features
z
Characteristic Values
Min. Typ. Max.
D
G = Gate
S = Source
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
D (Tab)
TO-247 (IXTH)
z
RDS(on)
- 200V
- 32A
Ω
130mΩ
TO-3P (IXTQ)
G
D (Tab)
=
=
≤
- 4.0
V
z
z
z
z
z
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
130 mΩ
DS100288A(11/10)
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = -10V, ID = 0.5 • ID25, Note 1
18
Ciss
Coss
VGS = 0V, VDS = - 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
S
14.5
nF
565
pF
105
pF
32
ns
15
ns
57
ns
12
ns
185
nC
66
nC
45
nC
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 1Ω (External)
Qg(on)
Qgs
30
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
0.42 °C/W
RthJC
RthCS
TO-220
TO-247 &TO-3P
0.50
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = - 32A, VGS = 0V, Note 1
trr
QRM
IRM
IF = -16A, -di/dt = -100A/μs
VR = -100V, VGS = 0V
Note
°C/W
°C/W
- 32
A
- 128
A
-1.3
V
190
1.7
-17.8
ns
μC
A
1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
TO-263 Outline
TO-3P Outline
Pins:
TO-220 Outline
Pins:
1 - Gate
3 - Source
1 - Gate
3 - Source
2,4 - Drain
TO-247 Outline
2 - Drain
1 = Gate
2 = Drain
3 = Source
© 2010 IXYS CORPORATION, All Rights Reserved
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
-120
-35
VGS = -10V
- 8V
VGS = -10V
- 8V
- 7V
-30
-100
- 6V
- 7V
-80
ID - Amperes
ID - Amperes
-25
-20
-15
-60
- 6V
-40
-10
- 5V
-20
-5
- 5V
- 4V
0
0
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
0
-4.5
-5
-10
-15
-25
-30
Fig. 4. RDS(on) Normalized to ID = -16A vs.
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
-35
2.4
VGS = -10V
- 7V
-30
2.2
VGS = -10V
2.0
R DS(on) - Normalized
- 6V
-25
ID - Amperes
-20
VDS - Volts
VDS - Volts
-20
- 5V
-15
-10
I D = - 32A
1.8
1.6
I D = -16A
1.4
1.2
1.0
0.8
-5
- 4V
0.6
0
0.4
0
-1
-2
-3
-4
-5
-6
-7
-8
-50
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = -16A vs.
Drain Current
50
75
100
125
150
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
2.4
-35
VGS = -10V
2.2
-30
TJ = 125ºC
2.0
-25
ID - Amperes
R DS(on) - Normalized
25
TJ - Degrees Centigrade
1.8
1.6
1.4
TJ = 25ºC
-20
-15
-10
1.2
-5
1.0
0.8
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
-110
ID - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
-50
-25
0
25
50
75
TJ - Degrees Centigrade
100
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 7. Input Admittance
Fig. 8. Transconductance
60
-55
TJ = - 40ºC
-50
50
-45
-35
TJ = 125ºC
-30
g f s - Siemens
ID - Amperes
-40
25ºC
- 40ºC
-25
-20
40
25ºC
30
125ºC
20
-15
-10
10
-5
0
-3.0
0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
0
-5
-10
-15
-20
VGS - Volts
-10
-90
-9
-80
-8
-70
-7
-60
-6
VGS - Volts
IS - Amperes
-30
-35
-40
-45
-50
-55
Fig. 10. Gate Charge
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-100
-50
-40
TJ = 125ºC
-30
-25
ID - Amperes
VDS = -100V
I D = -16A
I G = -1mA
-5
-4
-3
TJ = 25ºC
-20
-2
-10
-1
0
-0.3
0
-0.4
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
0
20
40
60
VSD - Volts
80
100
120
140
160
180
QG - NanoCoulombs
Fig. 11. Capacitance
Fig. 12. Forward-Bias Safe Operating Area
- 1000
100,000
f = 1 MHz
- 100
10,000
ID - Amperes
Capacitance - PicoFarads
Ciss
Coss
1,000
- 10
1ms
Crss
-5
-10
-15
-20
TJ = 150ºC
DC
TC = 25ºC
Single Pulse
10
0
25µs
100µs
-1
100
RDS(on) Limit
-25
VDS - Volts
© 2010 IXYS CORPORATION, All Rights Reserved
-30
-35
-40
- 0.1
-1
- 100
- 10
VDS - Volts
10ms
100ms
- 1000
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
16.0
16.0
RG = 1Ω , VGS = -10V
RG = 1Ω , VGS = -10V
VDS = -100V
15.5
VDS = -100V
15.5
25ºC < TJ < 125ºC
t r - Nanoseconds
t r - Nanoseconds
- 64A < ID < - 32A
15.0
14.5
14.0
13.5
15.0
14.5
14.0
13.5
13.0
13.0
25
35
45
55
65
75
85
95
105
115
125
-15
-20
-25
-30
-35
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
60
I D = - 64A, - 32A
80
50
60
40
40
30
20
20
0
2
4
6
8
10
12
14
16
td(off) - - - -
13
60
I D = - 32A
12
55
I D = - 64A
11
50
10
45
9
18
25
35
45
65
75
85
95
105
115
40
125
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
13.0
140
70
td(off) - - - -
12.5
300
tf
120
RG = 10Ω, VGS = -10V
11.0
260
VDS = -100V
100
220
I D = - 32A
80
180
I D = - 64A
60
140
40
100
20
60
50
10.5
45
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
ID - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0
20
0
2
4
6
8
10
RG - Ohms
12
14
16
18
t d(off) - Nanoseconds
55
TJ = 125ºC
t d(off) - Nanoseconds
60
TJ = 25ºC
td(off) - - - -
TJ = 125ºC, VGS = -10V
65
VDS = -100V
t f - Nanoseconds
tf
t f - Nanoseconds
55
TJ - Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
11.5
65
RG = 1Ω, VGS = -10V
RG - Ohms
12.0
-65
VDS = -100V
10
0
-60
t d(off) - Nanoseconds
70
14
t f - Nanoseconds
VDS = -100V
100
-55
70
tf
80
t d(on) - Nanoseconds
t r - Nanoseconds
td(on) - - - -
TJ = 125ºC, VGS = -10V
120
-50
15
90
tr
-45
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
160
140
-40
ID - Amperes
IXTA32P20T IXTQ32P20T
IXTP32P20T IXTH32P20T
Fig. 19. Maximum Transient Thermal Impedance
1
Z (th)JC - ºC / W
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_32P20T(A6)10-14-10
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