Dual Asymmetric N-channel Trench MOSFET 30V General Description Features The MDU5593S uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU5593S is suitable for DC/DC converter and general purpose applications. FET1 VDS = 30V ID = 34A RDS(ON) < 8.0mΩ < 11.0mΩ 100% UIL Tested 100% Rg Tested 5 FET2 VDS = 30V ID = 40A @VGS = 10V < 3.3mΩ @VGS = 10V < 5.0mΩ @VGS = 4.5V S2 6 S2 7 S2 8 G2 S1/D2 1 3 D1 2 3 2 D1 1 D1 4 G1 Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Drain-Source Voltage FET1 VDSS Gate-Source Voltage VGSS TC=25oC (Silicon Limited) Continuous Drain Current (1) TC=25oC (Package Limited) ID o TA=25 C Pulsed Drain Current IDM o TC=25 C Power Dissipation PD o TA=25 C Single Pulse Avalanche Energy (2) EAS Junction and Storage Temperature Range FET2 Unit 30 V ±20 ±20 52 95 34 40 13 21 40 100 35.7 44.6 2.2 2.5 60 60 TJ, Tstg V A A W mJ o -55~150 C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jun. 2013 Ver1.2 1 Symbol FET1 FET2 RθJA 57 50 RθJC 3.5 2.8 Unit o C/W MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V MDU5593S Part Number Temp. Range Package Packing RoHS Status MDU5593SVRH -55~150oC Dual PDFN56 Tape & Reel Halogen Free FET1 Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.8 3.0 Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - - 1 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 VGS = 10V, ID = 13A - 5.1 8.0 VGS = 4.5V, ID = 11A - 7.2 11.0 VDS = 5V, ID = 13A - 35 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gfs V μA mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) - 18.0 - Total Gate Charge Qg(4.5V) - 9.5 - - 3.2 - Gate-Source Charge Qgs VDS = 15.0V, ID = 10A, VGS = 10V Gate-Drain Charge Qgd - 3.2 - Input Capacitance Ciss - 1,142 - - 446 - Output Capacitance Coss VDS = 15.0V, VGS = 0V, f = 1.0MHz nC pF Reverse Transfer Capacitance Crss - 83 - Turn-On Delay Time td(on) - 9.9 - - 12.1 - - 28.5 - - 6.9 - - 1.0 - - 0.7 1.0 V - 31.8 - ns - 29.4 - nC Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VDD=15V, ID=10A, Rg=3Ω tf Rg f=1 MHz ns Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 1A, VGS = 0V IF = 10A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited. 2. EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 15.5A, VDD = 27V, VGS = 10V. And 100% UIL Test at L = 0.1mH, IAS = 18.0A. Jun. 2013 Ver1.2 2 MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V Ordering Information VGS = 10V Drain-Source On-Resistance [mΩ] 4.5V 8.0V 4.0V 40 ID, Drain Current [A] 5.0V 30 3.5V 20 10 3.0V 0 0.0 0.2 0.4 0.6 0.8 8 VGS = 4.5V 7 6 VGS = 10V 5 4 1.0 10 20 VDS, Drain-Source Voltage [V] 30 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 20 ※ Notes : ※ Notes : 1. VGS = 10 V 2. ID = 13 A 1.6 ID = 13A RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 50 ID, Drain Current [A] 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 16 12 TJ = 25 ℃ 8 4 150 3 4 5 6 7 8 9 10 o TJ, Junction Temperature [ C] VGS, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Area Fig.4 On-Resistance Variation with Gate to Source Voltage 25 ※ Notes : ※ Notes : VGS = 0V IDR, Reverse Drain Current [A] VDS = 5V ID, Drain Current [A] 20 15 TJ=25 ℃ 10 5 1 10 TJ=25 ℃ 0 10 -1 10 0 1 2 3 4 5 Fig.5 Transfer Characteristics Jun. 2013 Ver1.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V 9 50 8 1200 Capacitance [F] VGS, Gate-Source Voltage [V] Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss ※ Note : ID = 10A 6 4 800 ※ Notes ; Coss 1. VGS = 0 V 2. f = 1 MHz 400 2 Crss 0 0 5 10 15 0 20 0 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 20 30 VDS, Drain-Source Voltage [V] Fig.8 Capacitance Characteristics 2 60 50 10 1 Operation in This Area is Limited by R DS(on) 10 ID, Drain Current [A] ID, Drain Current [A] 10 ms 100 ms 1s 10 s DC 0 40 30 Limited by Package 20 10 Single Pulse TJ=Max Rated TA=25 ℃ 10 -1 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 D=0.5 0 10 0.2 0.1 0.05 -1 10 ※ Notes : 0.02 Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA 0.01 single pulse -2 10 Zθ JA , Normalized Thermal Response 10 -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jun. 2013 Ver1.2 4 MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V 1600 10 Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.8 3.0 Drain Cut-Off Current IDSS VDS = 24V, VGS = 0V - - 500 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 VGS = 10V, ID = 27A - 2.8 3.3 VGS = 4.5V, ID = 21A - 4.0 5.0 VDS = 5V, ID = 21A - 46 - Qg(10V) - 26.1 - Qg(4.5V) - 12.6 - - 4.5 - Drain-Source ON Resistance Forward Transconductance RDS(ON) gfs V μA mΩ S Dynamic Characteristics Total Gate Charge Total Gate Charge VDS = 15.0V, ID = 20A, VGS = 10V Gate-Source Charge Qgs Gate-Drain Charge Qgd - 4.2 - Input Capacitance Ciss - 1785 - Output Capacitance Coss - 652 - 98 - VDS = 15.0V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss - Turn-On Delay Time td(on) - 11.9 - tr - 8.9 - - 45.5 - Rise Time Turn-Off Delay Time Fall Time td(off) VDD=15V, ID=20A, Rg=6Ω pF ns - 14.5 - Rg f=1 MHz - 1.0 - Source-Drain Diode Forward Voltage VSD IS = 1.0A, VGS = 0V - 0.4 0.7 V Body Diode Reverse Recovery Time trr - 33.2 - ns Body Diode Reverse Recovery Charge Qrr - 28.5 - nC Gate Resistance tf nC Ω Drain-Source Body Diode Characteristics IF = 27A, dl/dt = 150A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited. 2. EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 15.5A, VDD = 27V, VGS = 10V. And 100% UIL Test at L = 0.1mH, IAS = 18.0A. Jun. 2013 Ver1.2 5 MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V FET2 Electrical Characteristics (Ta =25oC) Drain-Source On-Resistance [mΩ] VGS = 10V 4.5V ID, Drain Current [A] 40 4.0V 3.5V 30 20 3.0V 10 0 0.0 0.2 0.4 0.6 0.8 4.5 VGS = 4.5V 4.0 3.5 VGS = 10V 3.0 2.5 2.0 1.0 10 20 VDS, Drain-Source Voltage [V] 40 50 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 20 ※ Notes : ※ Notes : 18 1. VGS = 10 V 2. ID = 21 A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 30 ID, Drain Current [A] 1.4 1.2 1.0 0.8 ID = 21A 16 14 12 10 8 6 TJ = 25 ℃ 4 2 0.6 -50 -25 0 25 50 75 100 125 0 150 2 3 4 o TJ, Junction Temperature [ C] 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Area Fig.4 On-Resistance Variation with Gate to Source Voltage 25 ※ Notes : ※ Notes : VGS = 0V VDS = 5V 15 TJ=25 IDR, Reverse Drain Current [A] ID, Drain Current [A] 20 ℃ 10 5 0 1 2 3 TJ=25 ℃ 0 10 -1 4 10 VGS, Gate-Source Voltage [V] 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Jun. 2013 Ver1.2 1 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 6 MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V 5.0 50 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 20A Capacitance [F] VGS, Gate-Source Voltage [V] 8 6 4 2000 Ciss Coss 1000 ※ Notes ; 1. VGS = 0 V 2. f = 1 MHz 2 Crss 0 0 0 10 20 0 30 10 QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics 10 2 100 ID, Drain Current [A] ID, Drain Current [A] 80 1 100 ms Operation in This Area is Limited by R DS(on) 1s 10 30 Fig.8 Capacitance Characteristics 10 ms 10 20 VDS, Drain-Source Voltage [V] 10 s DC 0 60 40 Limited by Package 20 Single Pulse TJ=Max Rated TA=25 ℃ 10 -1 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] ℃ Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 D=0.5 0 10 0.2 0.1 0.05 -1 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA 0.02 10 0.01 -2 10 Zθ JA , Normalized Thermal Response 10 single pulse -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jun. 2013 Ver1.2 7 MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V 3000 10 MDU5593S - Dual N-Channel Trench MOSFET 30V Package Dimension Dual PDFN56 (5x6mm) Dimensions are in millimeters, unless otherwise specified Jun. 2013 Ver1.2 8 MagnaChip Semiconductor Ltd. MDU5593S - Dual N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jun. 2013 Ver1.2 9 MagnaChip Semiconductor Ltd.