HWC30NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • 11 dB Typical Gain at 4 GHz • 5V to 10V Operation 860 S ou rce 650 1 4 430 2 5 3 6 Description The HWC30NC is a medium power GaAs FET designed for various L-band & S-band applications. 210 S ou rce Absolute Maximum Ratings 0 VDS Drain to Source Voltage +15V VGS Gate to Source Voltage -5V ID Drain Current IDSS IG Gate Current 3mA TCH Channel Temperature 175°C TSTG Storage Temperature -65 to +175°C Power Dissipation 6W PT * 0.0 58.5 344.5 Units: µm Thickness: 100 ±5 Chip size ±50 Bond Pads 1-3 (Gate): Bond Pads 4-6 (Drain): 400.0 60 x 60 60 x 60 * mounted on an infinite heat sink Electrical Specifications (TA=25°C) f =4 GHz for all RF Tests Symbol Parameters & Conditions Units Min. Typ. Max. IDSS Saturated Current at VDS=3V, VGS=0V mA 500 600 900 VP Pinch-off Voltage at VDS=3V, ID=30mA V -3.5 -2.0 -1.5 gm Transconductance at VDS=3V, ID=300mA mS - 300 - dBm 29 30 - P1dB Power Output at Test Points VDS=10V, ID=0.5 IDSS G1dB Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS dB 9 10 - PAE Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS % 30 35 - Small Signal Common Source Scattering Parameters Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice. HWC30NC C-Band Power FET Non-Via Hole Chip Autumn 2002 V1 S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) lS11l ∠ANG lS21l ∠ANG lS12l ∠ANG lS22l ∠ANG 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 0.838 0.839 0.842 0.843 0.843 0.842 0.842 0.843 0.845 0.846 0.849 0.848 0.849 0.850 0.848 0.846 0.843 -136.22 -144.63 -150.68 -154.74 -158.40 -161.14 -163.41 -165.18 -166.48 -167.39 -168.13 -169.26 -170.64 -171.65 -172.62 -173.36 -173.73 4.344 3.525 2.954 2.526 2.208 1.958 1.755 1.597 1.461 1.348 1.249 1.162 1.087 1.027 0.969 0.921 0.873 92.80 85.70 79.70 74.29 69.51 65.26 61.58 58.03 54.54 51.38 48.23 45.29 42.69 40.04 37.10 34.79 32.10 0.031 0.035 0.042 0.048 0.053 0.060 0.066 0.073 0.079 0.088 0.096 0.105 0.114 0.124 0.135 0.146 0.159 72.10 73.09 77.67 79.88 80.80 82.79 84.42 86.57 87.77 88.74 90.30 90.46 91.53 91.74 91.96 92.12 91.95 0.187 0.209 0.238 0.267 0.293 0.324 0.350 0.367 0.385 0.401 0.423 0.441 0.466 0.491 0.510 0.519 0.533 -97.86 -100.53 -103.32 -104.43 -106.47 -109.01 -110.46 -112.47 -114.54 -116.11 -118.03 -119.90 -122.08 -123.44 -126.11 -127.98 -131.95 Bonding Manner Gate, drain pad: 1 wire on each pad Source pad: 2 wires on each side Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: [email protected] All specifications are subject to change without notice.