SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD ESD5B5.0 Bi-dirctional Micro-Packaged Transient Voltage Suppressor Features z z z z z z z z z z Small SOD-523 Package Bi-directional Configurations Peak Power Dissipation 50W @8 x 20 us Pulse Low Leakage Fast Response Time < 1 ns Protects One Power or I/O Port ESD Rating of Class 3 (>16KV) per Human Body Model ESD Protection to IEC 61000-4-2 Level 4 ESD Protection to IEC 61000-4-2 Level 4 RoHS Compliant in Lead-Free Versions Applications z z z z Communication Systems & Cellular Phones Personal Digital Assistant (PDA) Digital Cameras Power Supplies Absolute Maximum Ratings Parameter Symbol Value Units PPK 50 W Air ±30 KV CONTACT ±30 KV Per Human Body Model 16 KV Per Machine Model 400 V TSTG -55 to 150 °C TJ -55 to 150 °C Peak Power Dissipation (Note 1.) @TL = 25°C IEC 61000-4-2 (ESD) ESD Voltage Storage Temperature Range Operating Junction Temperature Range 1. 8 X 20 us, non–repetitive ESD5B5.0 Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Symbol Parameter IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage @ IPP VRWM Working Peak Reverse Voltage IR Maximum Reverse Leakage Current @ VRWM IT Test Current VBR Breakdown Voltage @ IT Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VRWM (V) IR(uA) VBR (V)@ IT @ VRWM (Note 1) Device Max Max Min Max mA Typ ESD5B5.0 5.0 1.0 5.8 7.8 1.0 32 IT *Surge current waveform per Figure 1. 1. VBR is measured with a pluse test current IT at an ambient temperature of 25℃． Fig1. Pulse Waveform C(pF) @VR=0V F = 1 MHz ESD5B5.0 Fig2. Power Derating Package Dimensions SOD-523 Dim Millimeters Inches MIN NOM MAX MIN NOM MAX A 1.10 1.20 1.30 0.043 0.047 0.051 B 0.70 0.80 0.90 0.028 0.032 0.035 C 0.50 0.60 0.70 0.020 0.024 0.028 D 0.25 0.30 0.35 0.010 0.012 0.014 J 0.07 0.14 0.20 0.0028 0.0055 0.0079 K 0.15 0.20 0.25 0.006 0.008 0.010 S 1.50 1.60 1.70 0.059 0.063 0.067