CYStech Electronics Corp. Spec. No. : C875H8 Issued Date : 2016.01.20 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTEB6N20H8 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDSON(typ)@VGS=10V, ID=3A 200 V 8A 1.8A 279 mΩ Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package Symbol Outline DFN5×6 MTEB6N20H8 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTEB6N20H8-0-T6-G Package DFN5×6 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T6 : 3000 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTEB6N20H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C875H8 Issued Date : 2016.01.20 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=5mH, ID=3A, VDD=50V Repetitive Avalanche Energy @ L=0.05mH TC=25℃ TC=100℃ Total Power Dissipation TA=25℃ TA=70℃ VDS VGS Tj, Tstg 200 ±30 8 5.1 1.8 *3 1.4 *3 24 *1 4 22.5 *4 5 *2 50 20 2.5 1.6 -55~+150 Symbol RθJC RθJA Value 2.5 50 *3 ID IDSM IDM IAS EAS EAR PD PDSM Operating Junction and Storage Temperature Range Limits Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Unit °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad 4. 100% tested by conditions of L=1mH, IAS=3A, VGS=10V, VDD=50V Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. BVDSS VGS(th) GFS *1 IGSS 200 2 - 4.4 279 4 ±100 1 10 340 - 378 47 22 - Unit Test Conditions Static IDSS RDS(ON) Dynamic Ciss Coss Crss MTEB6N20H8 *1 V S nA μA mΩ pF VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =15V, ID=3A VGS=±30V VDS =200V, VGS =0V VDS =160V, VGS =0V, Tj=85°C VGS =10V, ID=3A VGS=0V, VDS=25V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 10.5 2.2 4.1 8.8 17 22.4 20.6 5.3 - - 0.78 53 97 8 18 1.2 - Spec. No. : C875H8 Issued Date : 2016.01.20 Revised Date : Page No. : 3/9 nC VDS=160V, VGS=10V, ID=3A ns VDS=100V, ID=3A, VGS=10V, RGS=25Ω Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IS=2A, VGS=0V IF=3A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint unit : mm MTEB6N20H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C875H8 Issued Date : 2016.01.20 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 10V 9V 8V 7V 6V ID, Drain Current(A) 8 6 BVDSS, Normalized Drain-Source Breakdown Voltage 10 VGS=5.5V 4 VGS=5V 2 1.2 1 0.8 ID=250μA, VGS=0V 0.6 VGS=4.5V 0 0.4 0 2 4 6 8 VDS, Drain-Source Voltage(V) 10 -75 -50 -25 Static Drain-Source On-State resistance vs Drain Current Reverse Drain Current vs Source-Drain Voltage 1000 VSD, Source-Drain Voltage(V) R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1.2 VGS=6V VGS=10V 1 Tj=25°C 0.8 Tj=150°C 0.6 0.4 0.2 100 0.01 0.1 1 10 ID, Drain Current(A) 100 0 R DS(ON) , Static Drain-Source On-State Resistance(mΩ) 1000 900 ID=3A 800 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 700 600 500 400 300 200 100 3.2 2.8 VGS=10V, ID=3A 2.4 2 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C :279mΩ typ. 0 0 0 MTEB6N20H8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C875H8 Issued Date : 2016.01.20 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 VGS(th), NormalizedThreshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss Crss 1.2 ID=1mA 1 0.8 0.6 ID=250μA 0.4 0.2 10 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=100V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 10 1 0.1 VDS=10V Pulsed Ta=25°C 8 VDS=40V 6 VDS=160V 4 2 ID=3A 0 0.01 0.001 0.01 0.1 ID, Drain Current(A) 1 0 10 2 4 6 8 Total Gate Charge---Qg(nC) 10 12 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 10 100 10 1 ID, Maximum Drain Current(A) ID, Drain Current(A) 9 RDS(ON) Limited 100μs 1ms 10ms TC=25°C, Tj=150°C, VGS=10V, RθJC=2.5°C/W Single Pulse 0.1 DC 8 7 6 5 4 3 2 VGS=10V, RθJC=2.5°C/W 1 0 0.01 0.1 MTEB6N20H8 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification Spec. No. : C875H8 Issued Date : 2016.01.20 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics Single Pulse Maximum Power Dissipation 1000 15 900 VDS=10V 800 12 TJ(MAX) =150°C TC=25°C RθJC=2.5°C/W Power (W) ID, Drain Current (A) 700 9 6 600 500 400 300 200 3 100 0 0 1 2 3 4 5 6 7 8 VGS, Gate-Source Voltage(V) 9 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 1.RθJC(t)=r(t)*RθJC 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*RθJC(t) 4.RθJC=2.5 °C/W 0.2 0.1 0.1 0.01 1.E-04 MTEB6N20H8 0.05 0.02 Single Pulse 1.E-03 1.E-02 1.E-01 t1, Square Wave Pulse Duration(s) 1.E+00 1.E+01 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C875H8 Issued Date : 2016.01.20 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension Pin #1 MTEB6N20H8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C875H8 Issued Date : 2016.01.20 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTEB6N20H8 CYStek Product Specification Spec. No. : C875H8 Issued Date : 2016.01.20 Revised Date : Page No. : 9/9 CYStech Electronics Corp. DFN5×6 Dimension Marking : EB6 N20 Device Name Date Code 8-Lead DFN5×6 Plastic Package CYS Package Code : H8 Millimeters Min. Max. 0.900 1.000 0.254 REF 4.944 5.096 5.974 6.126 3.910 4.110 3.375 3.575 4.824 4.976 5.674 5.826 DIM A A3 D E D1 E1 D2 E2 Inches Min. Max. 0.035 0.039 0.010 REF 0.195 0.201 0.235 0.241 0.154 0.162 0.133 0.141 0.190 0.196 0.223 0.229 DIM k b e L L1 H θ Millimeters Min. Max. 1.190 1.390 0.350 0.450 1.270 TYP. 0.559 0.711 0.424 0.576 0.574 0.726 10° 12° Inches Min. Max. 0.047 0.055 0.014 0.018 0.050 TYP. 0.022 0.028 0.017 0.023 0.023 0.029 10° 12° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTEB6N20H8 CYStek Product Specification