POSEICO SPA Via Pillea 42-44, 16153 Genova - ITALY Tel. + 39 010 8599400 - Fax + 39 010 8682006 Sales Office: Tel. + 39 010 8599400 - [email protected] PHASE CONTROL MODULE ATD501 Repetitive voltage up to Mean forward current Surge current 1600 V 533 A 14,5 kA FINAL SPECIFICATION apr 17 - ISSUE : 02 Symbol Characteristic Tj [°C] Conditions Value Unit BLOCKING V RRM Repetitive peak reverse/off-state voltage 125 1600 V V RSM Non-repetitive peak reverse voltage 125 1700 V I RRM/DRM Repetitive peak reverse/off-state current 125 50 mA 533 A CONDUCTING I T (AV) Mean forward current 180° sin, 50 Hz, Th=85°C, double side cooled I T (AV) Mean forward current 180° sin, 50 Hz, Tc=55°C, double side cooled I TSM Surge forward current I² t I² t Sine wave, 10 ms without reverse voltage V T On-state voltage On-state current = V T(TO) r T 125 800 A 14,5 kA 3 1051 x 10 1600 A A²s 25 1,63 Threshold voltage 125 1,00 V V On-state slope resistance 125 0,380 mohm SWITCHING di/dt Critical rate of rise of on-state current, min. From 75% VDRM up to 1050 A; gate 10V, 5W 125 200 A/µs dv/dt Critical rate of rise of off-state voltage, min. Linear ramp up to 70% of VDRM 125 500 V/µs t d Gate controlled delay time, typical VD=100V; gate source 25V, 10W , tr=.5 µs 25 1,1 µs t q Circuit commutated turn-off time, typical dv/dt = 20 V/µs linear up to 75% VDRM 200 µs Q rr Reverse recovery charge di/dt = -20 A/µs, I= 700 A I rr Peak reverse recovery current VR= 50 V I H Holding current, typical VD=5V, gate open circuit 25 300 mA I L Latching current, typical VD=5V, tp=30µs 25 700 mA V GT Gate trigger voltage VD=5V 25 3,50 V I GT Gate trigger current VD=5V 25 250 mA V GD Non-trigger gate voltage, min. VD=VDRM 125 0,25 V V FGM Peak gate voltage (forward) 30 V I FGM Peak gate current 10 A V RGM Peak gate voltage (reverse) P GM Peak gate power dissipation P G Average gate power dissipation R th(j-h) Thermal impedance, DC Junction to case, per element R th(c-h) Thermal impedance Case to heatsink, per element T j Operating junction temperature 125 µC A GATE Pulse width 100 µs 5 V 150 W 2 W MOUNTING V ins RMS insulation voltage 50 hz , circuit to base, all terminal shorted T Mounting torque Case to heatsink T Mounting torque Busbars to terminal Mass ORDERING INFORMATION : ATD501 S 16 standard specification VRRM/100 25 50,0 °C/kW 20,0 °C/kW -30 / 125 °C 4500 V 4 to 6 kN 12 to 18 kN 1500 g ATD501 PHASE CONTROL MODULE FINAL SPECIFICATION apr 17 - ISSUE : 02 DISSIPATION CHARACTERISTICS SQUARE WAVE Tcase [°C] 130 125 120 115 110 105 100 95 90 85 30° 80 0 100 200 60° 300 90° 120° 400 180° 500 DC 600 700 IF(AV) [A] PF(AV) [W] 900 DC 800 180° 700 60° 600 90° 120° 30° 500 400 300 200 100 0 0 100 200 300 IF(AV) [A] 400 500 600 700 ATD501 PHASE CONTROL MODULE FINAL SPECIFICATION apr 17 - ISSUE : 02 DISSIPATION CHARACTERISTICS SINE WAVE Tcase [°C] 130 125 120 115 110 105 100 95 90 85 30° 80 0 100 200 60° 300 90° 400 120° 180° 500 600 IF(AV) [A] PF(AV) [W] 900 120° 800 60° 700 180° 90° 30° 600 500 400 300 200 100 0 0 100 200 300 IF(AV) [A] 400 500 600 ATD501 PHASE CONTROL MODULE FINAL SPECIFICATION apr 17 - ISSUE : 02 ON-STATE CHARACTERISTIC Tj = 125 °C SURGE CHARACTERISTIC Tj = 125 °C 1800 16 1600 14 12 1200 10 ITSM [kA] On-State Current [A] 1400 1000 800 600 8 6 400 4 200 2 0 0 0 0,5 1 1,5 2 1 On-State Voltage [V] 10 n° cycles TRANSIENT THERMAL IMPEDANCE 60 50 Zth j-h [°C/kW] 40 30 20 10 0 0,001 0,01 0,1 1 10 100 t[s] Distributed by All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SpA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. 100