Single N-channel Trench MOSFET 30V General Description Features The MDV1545 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDV1545 is suitable device for DC/DC Converter and general purpose applications. D D D D D D D D S S S G G S S S VDS = 30V ID = 32A @VGS = 10V RDS(ON) < 10.1 mΩ @VGS = 10V < 14.0 mΩ @VGS = 4.5V 100% UIL Tested 100% Rg Tested D G S PDFN33 Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V o 39 o 32 TC=25 C (Silicon Limited) TC=25 C (Package Limited) TC=25oC Continuous Drain Current (1) ID o TC=70 C 14 TA=70oC 11 IDM o TC=25 C 120 23 o TC=70 C PD TA=25oC TA=70oC Single Pulse Avalanche Energy A 27 TA=25oC Pulsed Drain Current Power Dissipation 28 14 W 3.4 2.2 (2) Junction and Storage Temperature Range EAS 45 TJ, Tstg -55~150 Symbol Rating RθJA 36 RθJC 5.0 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Oct. 2015. Ver. 1.3 1 Unit o C/W MagnaChip Semiconductor Ltd. MDV1545 – Single N-Channel Trench MOSFET 30V MDV1545 Part Number Temp. Range Package Packing RoHS Status MDV1545URH -55~150oC PDFN33 Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ. Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.9 2.7 - 1 uA nA V Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±100 VGS = 10V, ID = 11A - 8.2 10.1 11.9 14.6 Drain-Source ON Resistance Forward Transconductance TJ=125oC RDS(ON) gfs VGS = 4.5V, ID = 9A - 11.5 14.0 VDS = 5V, ID = 11A - 31 - 9.7 14.0 18.2 4.0 5.7 7.4 - 2.7 - - 1.3 - 560 800 1039 40 58 75 mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss VDD = 15V, ID = 11A, VGS = 10V VDS = 15V, VGS = 0V, f = 1.0MHz nC Output Capacitance Coss 273 390 560 Turn-On Delay Time td(on) - 5.7 - - 11.3 - - 20.0 - Rise Time Turn-Off Delay Time Fall Time Gate Resistance tr td(off) VGS = 10V, VDD = 15.0V, ID = 11A, RG =3Ω, tf Rg f=1 MHz Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr pF ns - 5.7 - 1.0 1.6 3.0 - 0.75 1.1 V - 28.0 - ns - 23.0 - nC Ω Drain-Source Body Diode Characteristics IF = 11A, dl/dt = 100A/μs Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 15 A, VDD = 27V, VGS = 10V Oct. 2015. Ver. 1.3 2 MagnaChip Semiconductor Ltd. MDV1545 – Single N-Channel Trench MOSFET 30V Ordering Information Drain-Source On-Resistance [mOhm] 20 VGS = 10V 8.0V ID, Drain Current [A] 40 6.0V 4.5V 4.0V 30 20 10 3.0V 18 16 14 VGS = 10V 12 10 VGS = 4.5V 8 6 4 2 0 0.0 0.5 1.0 1.5 0 2.0 0 20 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 100 1.8 * Notes : ID = 11.0A 90 2. ID = 11 A 1.6 RDS(ON) [mOhm], 1.4 1.2 1.0 0.8 Drain-Source On-Resistance RDS(ON), (Normalized) * Notes : 1. VGS = 10 V Drain-Source On-Resistance 40 ID, Drain Current [A] VDS, Drain-Source Voltage [V] 80 70 60 50 40 30 20 10 0.6 -50 -25 0 25 50 75 100 125 0 150 2 3 4 o TJ, Junction Temperature [ C] 5 6 7 8 9 10 VGS, Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 20 * Notes : VGS = 0V IDR, Reverse Drain Current [A] ID, Drain Current [A] * Notes : VDS = 5V 15 10 5 0 0 1 2 3 4 1 0.1 0.0 5 VGS, Gate-Source Voltage [V] 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain voltage [V] Fig.5 Transfer Characteristics Oct. 2015. Ver. 1.3 10 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDV1545 – Single N-Channel Trench MOSFET 30V 50 1500 Ciss = Cgs + Cgd (Cds = shorted) * Note : ID = 11A Coss = Cds + Cgd VDS = 15V Crss = Cgd Capacitance [pF] VGS, Gate-Source Voltage [V] 8 6 4 1000 Ciss Coss * Notes ; 1. VGS = 0 V 500 2. f = 1 MHz 2 Crss 0 0 0 5 10 15 20 0 5 10 15 20 25 30 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 3 10 50 40 2 ID, Drain Current [A] ID, Drain Current [A] 10 10 ms 1 10 100 ms Operation in This Area is Limited by R DS(on) DC 1s 10 s 0 10 30 Limited by Package 20 10 Single Pulse TJ=Max Rated o TC=25 C -1 10 -1 0 10 1 10 0 25 2 10 10 50 75 100 125 150 o VDS, Drain-Source Voltage [V] TC, Case Temperature [ C] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 1 10 ZthJC (t), Thermal Response D=0.5 0.2 0 10 0.1 0.05 0.02 -1 10 0.01 single pulse -2 10 * Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * ZthJC * RthJC(t) + TC -3 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Oct. 2015. Ver. 1.3 4 MagnaChip Semiconductor Ltd. MDV1545 – Single N-Channel Trench MOSFET 30V 10 MDV1545 – Single N-Channel Trench MOSFET 30V Package Dimension PowerDFN33 (3.3x3.3mm) Dimensions are in millimeters, unless otherwise specified (Unit: mm) Oct. 2015. Ver. 1.3 5 MagnaChip Semiconductor Ltd. MDV1545 – Single N-Channel Trench MOSFET 30V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Oct. 2015. Ver. 1.3 6 MagnaChip Semiconductor Ltd.