DMT3205 55V N-Channel Power MOSFET ● RDS(ON)<8mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Special designed for convertors and power controls ● ● Good stability and uniformity with high EAS ● Green molding compound PRODUCT SUMMARY RDS(on)(mΩ) VDS (V) 55 8.0@ VGS =10V Excellent package for good heat dissipation ID (A) 110 Pin Definition: 1. Gate 2. Drain 3. Source Application ● Power switching application ● Hard switched and High frequency circuits ● Uninterruptible power supply Block Diagram D ● Case: TO-220 Package Ordering Information Part No. DMT3205-TU G Package Packing TO-220 50pcs / Tube S Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Limit Unit 55 V ±20 V ID 110 A ID (100℃) 70 A Pulsed Drain Current IDM 390 A Maximum Power Dissipation PD 200 W 1.6 W/℃ EAS 910 mJ TJ,TSTG -55 To 155 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range May.2015-REV.00 www.dyelec.com 1/7 DMT3205 55V N-Channel Power MOSFET Thermal Characteristic Thermal Resistance,Junction-to-Case(Note 2) 0.75 RθJC Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition ℃/W Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 55 - - V Zero Gate Voltage Drain Current IDSS V= DS=55V,VGS 0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±= 20V,VDS 0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=62A - - 8 mΩ - 4900 - PF - 470 - PF - 460 - PF - 20 - nS On Characteristics (Note 3) Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=30V,ID=2A,RL=15Ω , - 19 - nS td(off) RG=2.5Ω,VGS=10V - 70 - nS - 30 - nS - 125 - nC - 24 - nC - 49 - nC - - 1.2 V - - 110 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=30A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD = VGS=0V,IS 40A Diode Forward Current (Note 2) IS Reverse Recovery Time trr Tj=25℃,IF=75A,di/dt=100A/μs - 37 - nS Reverse Recovery Charge Qrr (Note3) - 58 - nC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition：Tj=25℃,VDD=28V,VG=10V,L=0.5mH,Rg=25Ω May.2015-REV.00 www.dyelec.com 2/7 DMT3205 55V N-Channel Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit May.2015-REV.00 Time Unclamped Inductive Switching Waveforms www.dyelec.com 3 /7 DMT3205 55V N-Channel Power MOSFET ID- Drain Current (A) Normalized On-Resistance TYPICAL CHARACTERISTICS TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current May.2015-REV.00 Figure 6 Source- Drain Diode Forward www.dyelec.com 4/7 DMT3205 55V N-Channel Power MOSFET C Capacitance (pF) TYPICAL CHARACTERISTICS TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance May.2015-REV.00 www.dyelec.com 5/7 DMT3205 55V N-Channel Power MOSFET TO-220 Mechanical Drawing May.2015-REV.00 www.dyelec.com 6/7 DMT3205 55V N-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify DIYI for any damages resulting from such improper use or sale. Mar.2015-REV.00 www.dyelec.com 7/7