Spec. No. : C096N3 Issued Date : 2015.11.24 Revised Date : Page No. : 1/9 CYStech Electronics Corp. 150V N-Channel Enhancement Mode MOSFET MTE1K8N15KN3 BVDSS ID @VGS=10V, TA=25°C Features • Low on-resistance • Excellent thermal and electrical capabilities • Compact and low profile SOT-23 package • Pb-free lead plating and halogen-free package • ESD protected gate Equivalent Circuit 150V RDSON@VGS=10V, ID=0.5A 0.7A 1.07Ω(typ.) RDSON@VGS=10V, ID=1A 1.15Ω(typ.) Outline MTE1K8N15KN3 SOT-23 D G：Gate S：Source D：Drain G S Ordering Information Device MTE1K8N15KN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel,7” reel Product rank, zero for no rank products Product name MTE1K8N15N3 CYStek Product Specification Spec. No. : C096N3 Issued Date : 2015.11.24 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Limits 150 ±20 0.7 0.56 4 1.38 0.01 90 -55~+150 Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V (Note 3) Continuous Drain Current @ TA=70°C, VGS=10V (Note 3) Pulsed Drain Current (Note 1, 2) Maximum Power Dissipation @ TA=25℃ (Note 3) Linear Derating Factor Thermal Resistance, Junction-to-Ambient (Note 3) Operating Junction and Storage Temperature Range VDS VGS ID IDM PD Rth,ja Tj, Tstg Unit V A W W/°C °C/W °C Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3. Surface mounted on FR-4 board, t≤10sec. Electrical Characteristics (Ta=25°C) Symbol Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *VSD trr Qrr Min. Typ. Max. 150 2.0 - 1.07 1.15 1.13 4.0 ±10 1 25 1.8 1.8 - - 93 17 11 15.6 34.8 79.4 41.8 3.8 0.7 1.0 - - 0.83 26.3 23.3 1.2 - Unit Test Conditions S VGS=0V, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0V VDS=120V, VGS=0V VDS=120V, VGS=0V, Tj=70°C VGS=10V, ID=0.5A VGS=10V, ID=1A VDS=15V, ID=1A pF VDS=25V, VGS=0V, f=1MHz ns VDS=75V, ID=1A, VGS=10V, RG=6Ω nC VDS=120V, ID=1A, VGS=10V V ns nC VGS=0V, IS=1A V μA Ω IF=1A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTE1K8N15N3 CYStek Product Specification Spec. No. : C096N3 Issued Date : 2015.11.24 Revised Date : Page No. : 3/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 4.0 ID, Drain Current (A) 3.6 3.2 2.8 BVDSS, Normalized Drain-Source Breakdown Voltage 10V 9V 8V 7V 6V 2.4 2.0 1.6 5.5V 1.2 VGS=4V 0.8 5V 0.4 1.2 1.0 0.8 0.6 ID=250μA, VGS=0V 4.5V 0.4 0.0 0 5 10 15 VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 20 Reverse Drain Current vs Source-Drain Voltage 5.0 1.2 4.5 4.0 VSD, Source-Drain Voltage(V) R DS(on), Static Drain-Source On-State Resistance(Ω) Static Drain-Source On-State resistance vs Drain Current VGS=6V 3.5 3.0 VGS=5V 2.5 VGS=4.5V 2.0 1.5 1.0 0.5 VGS=0V 0.8 Tj=150°C 0.6 0.4 VGS=10V 0.2 0.0 0.01 0.1 1 ID, Drain Current(A) 0 10 1 2 3 IDR , Reverse Drain Current(A) 4 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 10.0 2.8 R DS(on), Normalized Static DrainSource On-State Resistance ID=0.5A R DS(on), Static Drain-Source OnState Resistance(Ω) Tj=25°C 1.0 8.0 6.0 4.0 2.0 2.4 VGS=10V, ID=0.5A 2.0 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 1.07Ω typ. 0.0 0.0 0 MTE1K8N15N3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C096N3 Issued Date : 2015.11.24 Revised Date : Page No. : 4/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage Capacitance---(pF) 1000 Ciss 100 C oss 10 Crss 1.4 1.2 ID=1mA 1.0 0.8 ID=250μA 0.6 0.4 1 0 5 10 15 20 25 VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 30 Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=75V VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 10 VDS=10V 1 VDS=15V 0.1 Ta=25°C Pulsed 8 6 VDS=120V 4 2 ID=1A 0 0.01 0.001 0.01 0.1 ID, Drain Current(A) 0 1 2 3 4 Qg, Total Gate Charge(nC) 5 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 0.9 10 0.8 RDSON Limited 1 100μs ID, Maximum Drain Current(A) ID, Drain Current(A) 1 1ms 0.1 10ms 100ms TA=25°C, Tj=150°C VGS=10V, RθJA=90°C/W Single Pulse 0.01 1s DC 0.7 0.6 0.5 0.4 0.3 0.2 TA=25°C,VGS=10V, RθJA=90°C/W 0.1 0 0.001 0.1 MTE1K8N15N3 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C096N3 Issued Date : 2015.11.24 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient Typical Transfer Characteristics 350 4.0 3.5 300 VDS=10V 250 Power (W) ID, Drain Current(A) 3.0 TJ(MAX) =150°C TA=25°C RθJA=90°C/W 2.5 2.0 200 150 1.5 100 1.0 50 0.5 0.0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.1 0.2 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=90 °C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTE1K8N15N3 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C096N3 Issued Date : 2015.11.24 Revised Date : Page No. : 6/9 Recommended Soldering Footprint MTE1K8N15N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C096N3 Issued Date : 2015.11.24 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTE1K8N15N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C096N3 Issued Date : 2015.11.24 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTE1K8N15N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C096N3 Issued Date : 2015.11.24 Revised Date : Page No. : 9/9 SOT-23 Dimension Marking: Date Code XX TE KN15 Device Code Style: Pin 1.Gate 2.Source 3.Drain 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTE1K8N15N3 CYStek Product Specification