CYStech Electronics Corp. Spec. No. : C319N3 Issued Date : 2014.12.05 Revised Date : 2015.03.18 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC2880N3 Features High breakdown voltage, BVCEO≥ 100V Large continuous collector current capability Low collector saturation voltage Pb-free lead plating and halogen-free package Symbol Outline BTC2880N3 SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTC2880N3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 :3000 pcs/tape & reel, 7” reel Product rank, zero for no rank products Product name BTC2880N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C319N3 Issued Date : 2014.12.05 Revised Date : 2015.03.18 Page No. : 2/7 Absolute Maximum Ratings (Ta=25C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICM IB PD RθJA Tj ; Tstg Limits 180 100 7 2 5 0.4 225 556 -55~+150 Unit V V V A A A mW C/W C Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) *VBE(on) *hFE 1 *hFE 2 *hFE 3 fT Cob Min. 180 100 7 120 150 80 50 - Typ. 0.11 0.22 0.44 0.85 0.77 18 Max. 100 100 0.2 0.4 1 1.2 0.9 250 40 Unit V V V nA nA V V V V V MHz pF Test Conditions IC=50μA IC=1mA IE=50μA VCB=180V VEB=6V IC=500mA, IB=50mA IC=1A, IB=50mA IC=2A, IB=100mA IC=500mA, IB=50mA VCE=5V, IC=500mA VCE=5V, IC=50mA VCE=5V, IC=100mA VCE=5V, IC=1A VCE=10V, IC=50mA, f=100MHz VCB=10V, IE=0A,f=1MHz *Pulse Test: Pulse Width 380μs, Duty Cycle2% BTC2880N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C319N3 Issued Date : 2014.12.05 Revised Date : 2015.03.18 Page No. : 3/7 Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 1000 VCESAT HFE Saturation Voltage-(mV) Current Gain---HFE VCE=5V 100 VCE=2V IC=20IB 100 VCE=1V IC=10IB 10 10 1 10 100 1000 Collector Current ---IC(mA) 10000 1 Saturation Voltage vs Collector Current 10000 VBESAT@IC=10IB VBEON@VCE=5V On Voltage-(mV) Saturation Voltage-(mV) 10000 On Voltage vs Collector Current 10000 1000 1000 100 100 1 10 100 1000 1 10000 Collector Current--- IC(mA) 10 100 1000 Collector Current--- IC(mA) 10000 Output Capatiance vs Reverse Biased Voltage Power Derating Curve 100 Output Capacitance---Cob(pF) 250 Power Dissipation---PD(mW) 10 100 1000 Collector Current ---IC(mA) 200 150 100 50 10 1 0 0 BTC2880N3 25 50 75 100 125 150 Ambient Temperature---TA(℃) 175 200 0.1 1 10 100 Reverse Biased Voltage--- VCB(V) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C319N3 Issued Date : 2014.12.05 Revised Date : 2015.03.18 Page No. : 4/7 Recommended Soldering Footprint BTC2880N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C319N3 Issued Date : 2014.12.05 Revised Date : 2015.03.18 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTC2880N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C319N3 Issued Date : 2014.12.05 Revised Date : 2015.03.18 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3C/second max. 3C/second max. 100C 150C 60-120 seconds 150C 200C 60-180 seconds 183C 60-150 seconds 240 +0/-5 C 217C 60-150 seconds 260 +0/-5 C 10-30 seconds 20-40 seconds 6C/second max. 6 minutes max. 6C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTC2880N3 CYStek Product Specification Spec. No. : C319N3 Issued Date : 2014.12.05 Revised Date : 2015.03.18 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Device Code AW Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : Lead :Pure tin plated. Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTC2880N3 CYStek Product Specification