INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤12.2mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High frequency switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 59 A IDM Drain Current-Single Pulsed 236 A PD Total Dissipation @TC=25℃ 94 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(j-c) Rth(j-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 MAX UNIT 1.6 ℃/W 75 ℃/W isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD122N10N3,IIPD122N10N3 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=1mA VGS(th) Gate Threshold Voltage VDS=VGS; ID=46μA RDS(on) Drain-Source On-Resistance IGSS MIN TYP MAX 100 V 3.5 V VGS=10V; ID=46A 12.2 mΩ Gate-Source Leakage Current VGS= 20V 0.1 μA IDSS Drain-Source Leakage Current VDS=100V; VGS= 0V 1 μA VSD Diode forward voltage IF=46A, VGS = 0V 1.2 V isc website：www.iscsemi.cn 2 2 UNIT isc & iscsemi is registered trademark