DMTH6010LPDQ 60V 175°C DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ADVANCE INFORMATION ADVANCED INFORMATION BVDSS RDS(ON) max 60V 11mΩ @ VGS = 10V 16mΩ @ VGS = 4.5V ID max TC = +25°C 47.6A 39.5A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Rated to +175°C – Ideal for High Ambient Temperature Environments 100% Unclamped Inductive Switching – ensures more reliable and robust end application High Conversion Efficiency Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Mechanical Data Engine Management Systems Body Control Electronics DCDC Converters Case: PowerDI5060-8 (Type C) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.097 grams (Approximate) S1 D1 G1 D1 S2 D2 G2 D2 G2 G1 S2 S1 Pin1 Top View D2 D1 Pin out Top View Bottom View Equivalent Circuit Ordering Information (Note 5) Part Number DMTH6010LPDQ-13 Notes: Case PowerDI5060-8 (Type C) Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D1 D1 D2 D2 = Manufacturer’s Marking H6010LD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 16 = 2016) WW = Week (01 to 53) H6010LD YY WW S1 DMTH6010LPDQ Document number: DS38517 Rev. 2 - 2 G1 S2 G2 1 of 7 www.diodes.com May 2016 © Diodes Incorporated DMTH6010LPDQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol ADVANCE INFORMATION ADVANCED INFORMATION Drain-Source Voltage VDSS Gate-Source Voltage Value 60 Unit V VGSS ±20 V Continuous Drain Current (Note 7) TC = +25°C TC = +100°C ID 47.6 33.7 A Continuous Drain Current (Note 6) TA = +25°C TA = +70°C ID 13.1 10.9 A 90 A 31 A 20 mJ Value 2.8 53 37.5 4 -55 to +175 Unit W °C/W W °C/W °C Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 7) IDM IS Avalanche Current, L = 0.1mH IAS Avalanche Energy, L = 0.1mH EAS A Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Symbol PD RθJA PD RθJC TJ, TSTG TA = +25°C TC = +25°C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Symbol Min Typ Max Unit BVDSS 60 — — — — 1 V µA VGS = 0V, ID = 1mA IDSS IGSS — — ±100 nA VGS = ±20V, VDS = 0V 1 — 8.5 3 V — 11 VDS = VGS, ID = 250μA VGS = 10V, ID = 20A — 10.9 16 VSD — 0.9 1.2 V Ciss — 2615 — pF Coss — 1415 — pF Crss — 58 — Rg Qg — — 0.67 20.3 — — pF Ω nC VGS(TH) RDS(ON) mΩ Total Gate Charge (VGS = 10V) Gate-Source Charge Qg — 40.2 — nC Qgs — 5.9 — nC Gate-Drain Charge Qgd — 9.3 — nC Turn-On Delay Time Turn-On Rise Time tD(ON) tR — — 5.7 — — ns ns Turn-Off Delay Time tD(OFF) — — ns ns 8.8 20.8 tF — 7.4 — Body Diode Reverse Recovery Time tRR — 34.5 — ns Body Diode Reverse Recovery Charge QRR — 37.5 — nC Turn-Off Fall Time Notes: Test Condition VDS = 48V, VGS = 0V VGS = 4.5V, ID = 20A VGS = 0V, IS = 20A VDS = 30V, VGS = 0V, f = 1MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 20A VDD = 30V, VGS = 10V, ID = 20A, RG = 3Ω IF = 20A, di/dt = 100A/μs 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMTH6010LPDQ Document number: DS38517 Rev. 2 - 2 2 of 7 www.diodes.com May 2016 © Diodes Incorporated DMTH6010LPDQ 50.0 30 VDS = 5V 45.0 VGS = 10.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V 35.0 VGS = 4.0V 30.0 VGS = 3.5V 25.0 20.0 15.0 20 5.0 175oC 15 150oC 10 125oC VGS = 3.0V 10.0 25oC -55oC VGS = 2.5V 0 0 0.5 1 1.5 2 2.5 3 1 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.014 0.012 VGS = 4.5V 0.01 0.008 VGS = 10.0V 0.006 0 5 1.5 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 85oC 5 0.0 10 15 20 25 30 35 40 45 ID, DRAIN-SOURCE CURRENT (A) 0.1 0.08 0.06 0.04 0.02 ID = 20A 0 50 0 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) 20 Figure 4. Typical Transfer Characteristic Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 1.8 0.02 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) ADVANCE INFORMATION ADVANCED INFORMATION 40.0 175oC 0.018 150oC 0.016 125oC 0.014 85oC 0.012 0.01 25oC 0.008 -55oC 0.006 VGS = 10V, ID = 20A 1.6 1.4 1.2 VGS = 4.5V, ID = 20A 1 0.8 0.6 0 5 10 15 20 25 30 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs Drain Current and Junction Temperature DMTH6010LPDQ Document number: DS38517 Rev. 2 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature May 2016 © Diodes Incorporated 0.016 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.02 VGS = 4.5V, ID = 20A 0.012 0.008 VGS = 10V, ID = 20A 0.004 2.5 2 ID = 1mA 1.5 ID = 250µA 1 0.5 0 -50 -50 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -25 -25 0 25 75 100 125 150 175 10000 CT, JUNCTION CAPACITANCE (pF) VGS = 0V IS, SOURCE CURRENT (A) 50 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junction Temperature 20 15 10 TJ = 175oC TJ = 85oC TJ = 150oC 5 TJ = 25oC TJ = 125oC f = 1MHz Ciss 1000 Coss 100 Crss 10 TJ = -55oC 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 0 1.5 5 10 15 20 25 30 35 40 45 50 55 60 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 100 10 RDS(ON) Limited 9 ID, DRAIN CURRENT (A) 8 7 VGS (V) ADVANCE INFORMATION ADVANCED INFORMATION DMTH6010LPDQ 6 5 4 VDS = 30V, ID = 20A 3 10 PW = 1µs PW = 10µs PW = 100µs 1 0.1 2 1 PW = 1ms TJ(Max) = 175℃ TC = 25℃ Single Pulse DUT on Infinite Heatsink VGS = 10V PW = 10ms PW = 100ms PW = 1s 0.01 0 0 5 10 15 20 25 30 35 Qg (nC) Figure 11. Gate Charge DMTH6010LPDQ Document number: DS38517 Rev. 2 - 2 40 45 4 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 May 2016 © Diodes Incorporated DMTH6010LPDQ r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION ADVANCED INFORMATION 1 D=0.7 D=0.5 D=0.9 D=0.3 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJC (t) = r(t) * RθJC RθJC = 4℃/W Duty Cycle, D = t1/t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMTH6010LPDQ Document number: DS38517 Rev. 2 - 2 5 of 7 www.diodes.com May 2016 © Diodes Incorporated DMTH6010LPDQ Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ADVANCE INFORMATION ADVANCED INFORMATION PowerDI5060-8 (Type C) D D1 0(4x) c x E1 A1 E y Seating Plane e 1 01(4x) Ø 1.000 Depth 0.07± 0.030 b1(8x) DETAIL A e/2 b(8x) 1 b2(2x) D3 L k A k1 E2 D2 L4 M D2 La DETAIL A L1 PowerDI5060-8 (Type C) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k 1.27 k1 0.56 L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 0.125 M 3.50 3.71 3.605 x 1.400 y 1.900 θ 10° 12° 11° θ1 6° 8° 7° All Dimensions in m Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) X4 8 Dimensions X3 Y1 X2 Y2 Y3 G1 X1 Y(4x) 1 X DMTH6010LPDQ Document number: DS38517 Rev. 2 - 2 C C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Value (in mm) 1.270 0.660 0.820 0.610 3.910 1.650 1.650 4.420 1.270 1.020 3.810 6.610 G 6 of 7 www.diodes.com May 2016 © Diodes Incorporated DMTH6010LPDQ ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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