CGHV96050F2 50 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged PN: CGHV960 50F2 Package Type : 440217 package for optimal electrical and thermal performance. Typical Performance Over 8.4-9.6 GHz (TC = 25˚C) Parameter 8.4 GHz 8.8 GHz 9.0 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units Linear Gain 13.8 12.8 12.3 12.3 12.2 11.8 dB 85 77 81 82 75 75 W 10.4 9.9 10.1 10.1 9.8 9.8 dB 57 54 52 54 48 45 % Output Power Power Gain Power Added Efficiency Note: Measured in CGHV96050F2-AMP (838179) under 100 uS pulse width, 10% duty, Pin 39.0 dBm (7.9 W) y Rev 3.2 - Januar 2017 Features Applications • 8.4 - 9.6 GHz Operation • Marine Radar • 80 W POUT typical • Weather Monitoring • 10 dB Power Gain • Air Traffic Control • 55 % Typical PAE • Maritime Vessel Traffic Control • 50 Ohm Internally Matched • Port Security • <0.1 dB Power Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Units Conditions Drain-source Voltage VDSS 100 Volts 25˚C Gate-source Voltage VGS -10, +2 Volts 25˚C Power Dissipation PDISS 57.6 / 86.4 Watts (CW / Pulse) Storage Temperature TSTG -65, +150 ˚C TJ 225 ˚C Operating Junction Temperature Maximum Drain Current IDMAX 6 Amps Maximum Forward Gate Current IGMAX 14.4 mA TS 245 ˚C τ 40 in-oz Thermal Resistance, Junction to Case RθJC 1.40 ˚C/W Pulse Width = 100 µs, Duty Cycle = 10%, PDISS = 86.4 W Thermal Resistance, Junction to Case RθJC 2.12 ˚C/W CW, 85˚C, PDISS = 57.6 W TC -40, +125 ˚C Soldering Temperature 1 Screw Torque Case Operating Temperature3 25˚C Note: 1 Current limit for long term reliable operation. 2 Refer to the Application Note on soldering at http://www.cree.com/rf/document-library 3 See also, the Power Dissipation De-rating Curve on Page 9. Electrical Characteristics (Frequency = 9.6 GHz unless otherwise stated; TC = 25˚C) Characteristics Symbol Min. Typ. Max. Units Gate Threshold Voltage VGS(TH) -3.8 -3.0 -2.3 V VDS = 10 V, ID = 14.4 mA Gate Quiscent Voltage VQ – -3.0 – V VDS = 40 V, ID = 500 mA Saturated Drain Current2 IDS 10.5 13.0 – A VDS = 6.0 V, VGS = 2.0 V Drain-Source Breakdown Voltage VBD 100 – – V VGS = -8 V, ID = 14.4 mA Small Signal Gain S21 10.5 11.8 – dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm Input Return Loss 1 S11 – –5.2 –2.1 dB Output Return Loss S22 – –12.3 –9.0 dB VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm Power Output3, 4 POUT 47 70 – W VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm Power Added Efficiency3, 4 PAE 32 45 – % VDD = 40 V, IDQ = 500 mA, PIN = 39 dBm VSWR – – 5:1 Y DC Characteristics RF Characteristics Conditions 1 3 Output Mismatch Stress VDD = 40 V, IDQ = 500 mA, PIN = -20 dBm, Frequency = 8.4-9.6 GHz No damage at all phase angles, VDD = 40 V, IDQ = 500 mA, Notes: 1 Measured on-wafer prior to packaging. 2 Scaled from PCM data. 3 Measured in CGHV96050F2-AMP (AD-09115) under 100 µS pulse width, 10% duty 4 Fixture loss de-embedded using the following offsets. At 9.6 GHz, input and output = 0.50 dB. Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 2 CGHV96050F2 Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F2 Typical Performance Figure 1. - Small Signal Gain and Return Loss vs Frequency of CGHV96050F2 measured in CGHV96050F2-AMP VDS = 40 V, IDQ = 500mA 20 15 Gain (dB), Return Losses (dB) 10 5 0 -5 -10 -15 S11typ -20 S22typ S21typ -25 -30 7 7.5 8 8.5 9 Frequency (GHz) 9.5 10 10.5 11 Figure 2. - Power Gain vs. Frequency and Input Power PG Vs Freq & Pin VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10% Pulse 100 uS/ 10 % Duty 14 12 Power Gain (dB) 10 8 6 Psat 4 Pin = 40 dBm Pin = 39 dBm Pin = 38 dBm 2 Pin = 37 dBm Pin = 36 dBm 0 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 Frequency (GHz) 9.2 9.4 9.6 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 3 CGHV96050F2 Rev 3.2 9.8 10.0 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F2 Typical Performance PoutPower vs Pin vs. Input Power Figure 3. - Output Pulse 100 uS/ 10% duty VDD = 40 V, Pulse Width = 100 µsec, Duty Cycle = 10% 50 9.0 GHz 9.2 GHz 45 9.4 GHz Power Output (dBm) 9.5 GHz 40 35 30 25 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 Power Input (dBm) Figure 4. - Power Gain vs.Gain Frequency Power vs Pin and Input Power uS/ 10% duty VDD = 40 V, Pulse Pulse Width100 = 100 µsec, Duty Cycle = 10% 15 14 13 12 11 Power Gain (dB) 10 9 8 7 6 9.0 GHz 5 9.2 GHz 4 9.4 GHz 3 9.6 GHz 2 1 0 14 16 18 20 22 24 26 28 30 Input Power(dBm) 32 34 36 38 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 4 CGHV96050F2 Rev 3.2 40 42 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F2 Typical Performance Figure 5. - Power Added Efficiency vs. Input Power Power Added Efficiency vs. Pin VDD = 40 V, Pulse Width = 100 µsec, Pulse 100 uS/ 10% dutyDuty Cycle = 10% 60 55 9.0 GHz 50 9.2 GHz 9.4 GHz Power Added E fficiency (%) 45 9.6 GHz 40 35 30 25 20 15 10 5 0 14 16 18 20 22 24 26 28 30 Input Power (dBm) 32 34 36 38 40 42 Figure 6. - Output Power vs. Time Power vs. Time (Pin 39 dBm) VDD = 40 V,10, PIN50= ,39 Duty = 10% 100dBm, and 300 uS Cycle (10 % duty) 48.70 48.60 10us 50us 48.50 100us 300us Power (dBm) 48.40 48.30 48.20 48.10 48.00 47.90 47.80 47.70 0 50 100 150 200 250 Pulse Length (uS) 300 350 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 5 CGHV96050F2 Rev 3.2 400 450 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F2 Typical Performance Figure 7. - Output Power vs. Input Power & Frequency Pout Vs Freq & Pin VDD = 40 V, PulsePulse Width = uS 100 µsec, Duty Cycle = 10% 100 / 10 % Duty 50.0 49.0 48.0 Output Power (dBm) 47.0 46.0 45.0 Psat Pin = 40 Pin = 39 44.0 Pin = 38 Pin = 37 43.0 Pin = 36 42.0 41.0 40.0 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 Frequency (GHz) 9.2 9.4 9.6 9.8 10.0 9.8 10.0 Figure 8. - Power Added Efficiency vs. Input Power & Frequency FreqDuty & PinCycle = 10% VDD = 40 V, PIN PAE = 39Vs. dBm, Pulse 100 uS / 10 % Duty 70 60 Power Added Efficiency (%) 50 40 Psat 30 Pin = 40 Pin = 39 Pin = 38 20 Pin = 37 Pin = 36 10 0 7.6 7.8 8.0 8.2 8.4 8.6 8.8 9.0 Frequency (GHz) 9.2 9.4 9.6 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 6 CGHV96050F2 Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F2-AMP Demonstration Amplifier Circuit Bill of Materials Designator Description Qty R1 RES, 47 OHM, +/- 1%, 1/16W,0603 1 C1 CAP, 0.9pF, +/- 0.05pF,200V, 0402 1 C11 CAP, 1.6pF, +/- 0.1 pF,200V, 0402 1 C2, C12 CAP, 1.0pF, +/- 0.1 pF,200V, 0402 2 C3,C13 CAP, 10.0pF, +/-5%,250V, 0603, 2 C4,C14 CAP, 470PF, 5%, 100V, 0603, X 2 C5,C15 CAP,33000PF, 0805,100V, X7R 2 C6 CAP 10UF 16V TANTALUM 1 C18 CAP, 470uF, 20%, 80V, ELECT, SMD Size K 1 J1,J2 CONN,N,FEM,W/.500 SMA FLNG 2 J3 HEADER RT>PLZ .1CEN LK 9POS 1 J4 CONNECTOR ; SMB, Straight, JACK,SMD 1 W1 CABLE ,18 AWG, 4.2" 1 PCB, RF35, 2.5 X 3.0 X (0.020/0.250) 1 TRANSISTOR, CGHV96050F2 1 #2 SPLIT LOCKWASHER SS 4 2-56 SOC HD SCREW 1/4 SS 4 CGHV96050F2-AMP Demonstration Amplifier Circuit Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 7 CGHV96050F2 Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F2-AMP Demonstration Amplifier Circuit Schematic CGHV96050F2-AMP Demonstration Amplifier Circuit Outline Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 8 CGHV96050F2 Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf CGHV96050F2 Power Dissipation De-rating Curve Power dissipation derating curve vs. Max TCase CW & Pulse (100 uS/ 10% duty) 100 90 Power dissipation (W) 80 70 Note 60 50 40 CW 30 Pulse 100uS / 10% 20 10 0 0 20 40 60 80 100 120 140 160 180 200 220 240 Flange Temperature (C) Note: Shaded area exceeds Maximum Case Operating Temperature (See Page 2). Electrostatic Discharge (ESD) Classifications Parameter Symbol Class Test Methodology Human Body Model HBM 1A (> 250 V) JEDEC JESD22 A114-D Charge Device Model CDM II (200 < 500 V) JEDEC JESD22 C101-C Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 9 CGHV96050F2 Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Dimensions CGHV96050F2 (Package Type — 440217) Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 10 CGHV96050F2 Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Part Number System CGHV96050F2 Package, Power Test Power Output (W) Upper Frequency (GHz) Cree GaN HEMT High Voltage Product Line Parameter Upper Frequency1 Power Output Package Value Units 9.6 GHz 50 W Flange - Table 1. Note : Alpha characters used in frequency code 1 indicate a value greater than 9.9 GHz. See Table 2 for value. Character Code Code Value A 0 B 1 C 2 D 3 E 4 F 5 G 6 H 7 J 8 K 9 Examples: 1A = 10.0 GHz 2H = 27.0 GHz Table 2. Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 11 CGHV96050F2 Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Product Ordering Information Order Number Description Unit of Measure CGHV96050F2 GaN HEMT Each CGHV96050F2-TB GaN HEMT Each CGHV96050F2-AMP Test board without GaN HEMT Each CGHV96050F2-JMT CGHV96050F2 Delivered in a JEDEC Matrix tray 50 parts / tray. Order multiple = 50pcs Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 12 CGHV96050F2 Rev 3.2 Image Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for its use or for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications, and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. CREE and the CREE logo are registered trademarks of Cree, Inc. For more information, please contact: Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 www.cree.com/RF Sarah Miller Marketing Cree, RF Components 1.919.407.5302 Ryan Baker Marketing & Sales Cree, RF Components 1.919.407.7816 Tom Dekker Sales Director Cree, RF Components 1.919.407.5639 Copyright © 2013-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific product and/or vendor endorsement, sponsorship or association. 13 CGHV96050F2 Rev 3.2 Cree, Inc. 4600 Silicon Drive Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 Fax: +1.919.869.2733 www.cree.com/rf