HAT2265H Silicon N Channel Power MOS FET Power Switching Rev.0.00 Sept.2004 Features • High speed switching • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.5 mΩ typ. (at VGS = 10 V) • Lead Free Outline LFPAK 5 5 D 4 G 4 1, 2, 3 Source 4 Gate 5 Drain S S S 1 2 3 Rev.0.00, Sept.2004, page 1 of 5 3 1 2 HAT2265H Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS ±20 V Drain current ID 55 A Drain peak current ID(pulse) 220 A Body-drain diode reverse drain current IDR 55 A Avalanche current Note1 IAP Note 2 30 A 90 mJ 30 W Avalanche energy EAR Note 2 Channel dissipation Pch Note3 Channel to Case Thermal Resistance θch-C 4.17 °C/W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.0.00, Sept.2004, page 2 of 5 HAT2265H Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ± 20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ± 10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 1 µA VDS = 30 V, VGS = 0 Gate to source cutoff voltage VGS(off) 1.6 — 2.5 V VDS = 10 V, I D = 1 mA Static drain to source on state RDS(on) — 2.5 3.3 mΩ ID = 27.5 A, VGS = 10 V Note4 resistance RDS(on) — 3.4 5.3 mΩ ID = 27.5 A, VGS = 4.5 V Forward transfer admittance |yfs| 60 100 — S ID = 27.5 A, VDS = 10 V Note4 Input capacitance Ciss — 5180 — pF VDS = 10 V Output capacitance Coss — 1200 — pF VGS = 0 Reverse transfer capacitance Crss — 380 — pF f = 1 MHz Gate Resistance Rg — 0.5 — Ω Total gate charge Qg — 33 — nc VDD = 10 V Gate to source charge Qgs — 15 — nc VGS = 4.5 V 30 Gate to drain charge Qgd — 7.1 — nc ID = 55 A Turn-on delay time td(on) — 13 — ns VGS = 10 V, ID = 27.5 A Rise time tr — 65 — ns VDD ≅ 10 V Turn-off delay time td(off) — 60 — ns RL = 0.36 Ω Fall time tf — 9.5 — ns Rg = 4.7 Ω Body–drain diode forward voltage VDF — 0.81 1.06 V IF = 55 A, VGS = 0 Body–drain diode reverse recovery time trr — 40 — ns IF = 55 A, VGS = 0 diF/ dt = 100 A/ µs Notes: 4. Pulse test Rev.0.00, Sept.2004, page 3 of 5 Note4 Note4 HAT2265H Package Dimensions As of January, 2003 Unit: mm 4.9 5.3 Max 4.0 ± 0.2 +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 0˚ – 8˚ +0.25 +0.05 *0.20 –0.03 0.6 –0.20 1.3 Max 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 0.75 Max 0.10 1.27 *0.40 ± 0.06 *Ni/Pd/Au plating Rev.0.00, Sept.2004, page 4 of 5 0.25 M Package Code JEDEC JEITA Mass (reference value) LFPAK — — 0.080 g HAT2265H Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. 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