DMP6110SVT P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) Max ID Max TC = +25°C 105m @ VGS = -10V -7.3A 130m @ VGS = -4.5V -6.5A V(BR)DSS NEW PRODUCT NEW PRODUCT Features and Benefits -60V Mechanical Data Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Backlighting Power Management Functions DC-DC Converters Case: TSOT26 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (Approximate) D TSOT26 D 1 6 D D 2 5 D G 3 4 S G S Top View Device Schematic Equivalent Circuit Case TSOT26 TSOT26 Packaging 3,000/Tape & Reel 10,000/Tape & Reel Ordering Information (Note 4) Part Number DMP6110SVT-7 DMP6110SVT-13 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information P61 = Product Type Marking Code YM or YM = Date Code Marking Y or Y = Year (ex: C = 2015) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMP6110SVT Document number: DS37594 Rev. 2 - 2 Mar 3 2017 E Apr 4 May 5 2018 F Jun 6 1 of 7 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D April 2015 © Diodes Incorporated DMP6110SVT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage TC = +25°C TC = +70°C NEW PRODUCT NEW PRODUCT Continuous Drain Current (Note 6) VGS = -10V Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (380µs Pulse, 1% Duty Cycle) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH ID Value -60 ±20 -7.3 -5.8 IS IDM IAS EAS -24 -19 18 Unit V V A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD RJA PD RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 1.2 0.75 105 60 1.8 1.1 69 39 Unit W °C/W °C/W W °C/W °C/W RJC 15 °C/W TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 -1 100 V µA nA VGS = 0V, ID = -250µA VDS = -48V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) RDS(ON) VSD -0.7 -3 105 130 -1.2 V Static Drain-Source On-Resistance -1 V VDS = VGS, ID = -250µA VGS = -10V, ID = -4.5A VGS = -4.5V, ID = -3.5A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR 969 57 44 13.7 8.2 17.2 3.0 3.1 4.4 23 34 42 13.2 6.18 pF VDS = -30V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -30V, ID = -12A ns VGS = -10V, VDS = -30V, RGEN = 3Ω, ID = -12A ns nC IS = -12A, dI/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ Test Condition 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMP6110SVT Document number: DS37594 Rev. 2 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated DMP6110SVT 20.0 20 VGS=-10V 18.0 16 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 14.0 VGS=-5.0V 12.0 VGS=-3.5V 10.0 8.0 6.0 VGS=-3.0V 4.0 VGS=-2.8V 14 12 10 8 6 4 125℃ 2 85℃ 25℃ -55℃ 150℃ 0 0.0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 1 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.14 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VDS=-5V 18 VGS=-4.5V 2.0 0.12 0.1 VGS=-4.5V 0.08 VGS=-10V 0.06 0.04 0.02 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 0.25 0.2 ID=-4.5A 0.15 0.1 0.05 ID=-3.5A 0 5 9 13 17 21 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.14 5 0.3 1 4 8 12 16 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 20 2 VGS=-10V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT NEW PRODUCT 16.0 VGS=-4.0V 150℃ 0.12 125℃ 0.1 85℃ 0.08 25℃ 0.06 -55℃ 0.04 0.02 1 3 5 7 9 11 13 15 17 19 21 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMP6110SVT Document number: DS37594 Rev. 2 - 2 3 of 7 www.diodes.com 1.8 VGS=-10V, ID=-4.5A 1.6 1.4 1.2 VGS=-4.5V, ID=-3.5A 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature April 2015 © Diodes Incorporated DMP6110SVT 2.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 VGS=-4.5V, ID=-3.5A 0.1 0.08 0.06 VGS=-10V, ID=-4.5A 0.04 2 1.8 ID=-1mA 1.6 ID=-250μA 1.4 1.2 1 0.8 0.02 -50 -25 0 25 50 75 100 125 -50 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 18 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 10000 16 IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) -25 100000 20 14 12 10 VGS=0V, TA=85℃ 8 VGS=0V, TA=125℃ 6 4 VGS=0V, TA=25℃ VGS=0V, TA=150℃ 2 150℃ 1000 125℃ 100 85℃ 10 1 25℃ 0.1 VGS=0V, TA=-55℃ 0.01 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 5 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Drain-Source Leakage Current vs. Voltage 10 10000 f=1MHz 8 Ciss 1000 6 VGS (V) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT NEW PRODUCT 0.14 100 VDS=-30V, ID=-12A 4 Coss 2 Crss 10 0 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11. Typical Junction Capacitance DMP6110SVT Document number: DS37594 Rev. 2 - 2 40 4 of 7 www.diodes.com 0 2 4 6 8 10 12 14 Qg (nC) Figure 12. Gate Charge 16 18 April 2015 © Diodes Incorporated DMP6110SVT 100 RDS(ON) Limited PW =1ms 10 ID, DRAIN CURRENT (A) NEW PRODUCT NEW PRODUCT PW =100μs 1 PW =10ms PW =100ms TJ(MAX)=150℃ PW =1s TA=25℃ Single Pulse PW =10s DUT on 1*MRP board DC VGS= -10V 0.1 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 100 r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t)=r(t) * RθJA RθJA=105℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-05 DMP6110SVT Document number: DS37594 Rev. 2 - 2 0.0001 0.001 0.01 0.1 1 10 t1, PULSE DURATION TIME (sec) Figure 14. Transient Thermal Resistance 5 of 7 www.diodes.com 100 1000 April 2015 © Diodes Incorporated DMP6110SVT Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D NEW PRODUCT NEW PRODUCT e1 E E1 L2 c 4x1 e L 6x b A A2 A1 TSOT26 Dim Min Max Typ A 1.00 A1 0.01 0.10 A2 0.84 0.90 D 2.90 E 2.80 E1 1.60 b 0.30 0.45 c 0.12 0.20 e 0.95 e1 1.90 L 0.30 0.50 L2 0.25 θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMP6110SVT Document number: DS37594 Rev. 2 - 2 6 of 7 www.diodes.com April 2015 © Diodes Incorporated DMP6110SVT IMPORTANT NOTICE NEW PRODUCT NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com DMP6110SVT Document number: DS37594 Rev. 2 - 2 7 of 7 www.diodes.com April 2015 © Diodes Incorporated