Fairchild FYPF1010DNTU Low forward voltage drop Datasheet

FYPF1010DN
FYPF1010DN
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Applications
• Switched mode power supply
• Freewheeling diodes
TO-220F
1
2
3
1. Anode 2.Cathode 3. Anode
SCHOTTKY BARRIER RECTIFIER
Absolute Maximum Ratings TC=25°°C unless otherwise noted
Symbol
VRRM
Parameter
Maximum Repetitive Reverse Voltage
VR
Maximum DC Reverse Voltage
IF(AV)
Average Rectified Forward Current
IFSM
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
TJ, TSTG
Operating Junction and Storage Temperature
@ TC = 125°C
Value
100
Units
V
100
V
10
A
100
A
-40 to +150
°C
Value
4.0
Units
°C/W
Value
Units
V
Thermal Characteristics
Symbol
RθJC
Parameter
Maximum Thermal Resistance, Junction to Case (per diode)
Electrical Characteristics (per diode)
Symbol
VFM *
IRM *
Parameter
Maximum Instantaneous Forward Voltage
IF = 5A
IF = 5A
IF = 10A
IF = 10A
Maximum Instantaneous Reverse Current
@ rated VR
TC = 25 °C
TC = 125 °C
TC = 25 °C
TC = 125 °C
0.75
0.65
0.95
0.73
TC = 25 °C
TC = 125 °C
1
30
mA
* Pulse Test: Pulse Width=300µs, Duty Cycle=2%
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
FYPF1010DN
Typical Characteristics
100
o
10
Reverse Current, I R [mA]
Forward Current, I F [A]
TJ=150 C
1
o
TJ=125 C
o
TJ=75 C
0.1
10
o
TJ=125 C
1
o
TJ=75 C
0.1
0.01
o
TJ=25 C
o
TJ=25 C
0.001
0.01
0
1
2
0
3
20
40
60
80
100
Reverse Voltage, VR [V]
Forward Voltage Drop, VF [V]
Figure 1. Typical Forward Voltage Characteristics
(per diode)
Figure 2. Typical Reverse Current
vs. Reverse Voltage (per diode)
Transient Thermal Impedance [ C/W]
10
o
Junction Capacitance, C J [pF]
o
TJ=25 C
100
0
20
40
60
80
100
1
100µ
Figure 3. Typical Junction Capacitance
(per diode)
10m
100m
1
10
Figure 4. Thermal Impedance Characteristics
(per diode)
12
120
Max. Forward Surge Current, I FSM [A]
Average Forward Current, IF(AV) [A]
1m
Pulse Duration [s]
Reverse Voltage, VR [V]
DC
10
8
6
4
2
0
0
20
40
60
80
100
120
140
160
o
Case Temperature, TC [ C]
Figure 5. Forward Current Derating Curve
©2001 Fairchild Semiconductor Corporation
100
80
60
40
20
0
1
10
100
Number of Cycles @ 60Hz
Figure 6. Non-Repetive Sureg Current
(per diode)
Rev. B, November 2001
FYPF1010DN
Package Dimensions
3.30 ±0.10
TO-220F
10.16 ±0.20
2.54 ±0.20
ø3.18 ±0.10
(7.00)
(1.00x45°)
15.87 ±0.20
15.80 ±0.20
6.68 ±0.20
(0.70)
0.80 ±0.10
)
0°
(3
9.75 ±0.30
MAX1.47
#1
+0.10
0.50 –0.05
2.54TYP
[2.54 ±0.20]
2.76 ±0.20
2.54TYP
[2.54 ±0.20]
9.40 ±0.20
4.70 ±0.20
0.35 ±0.10
Dimensions in Millimeters
©2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2001 Fairchild Semiconductor Corporation
Rev. H4
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