Infineon IGU04N60T Low loss igbt : igbt in trenchstopâ ¢ technology Datasheet

TRENCHSTOP™ Series
Low Loss IGBT :
IGU04N60T
q
IGBT in TRENCHSTOP™ technology
C
G









Very low VCE(sat) 1.5 V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- frequency inverters
- drives
TRENCHSTOP™ technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
- low VCE(sat)
Positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IGU04N60T
E
PG-TO251-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking
Package
600 V
4A
1.5 V
175 C
G04T60
PG-TO251-3
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
600
V
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
IC
9.5
6.5
A
Pulsed collector current, tp limited by Tjmax
ICpul s
12
Turn off safe operating area (VCE  600V, Tj  175C)
-
12
Gate-emitter voltage
VGE
20
V
tSC
5
s
Power dissipation TC = 25C
Ptot
42
W
Operating junction temperature
Tj
-40...+175
C
Storage temperature
Tstg
-55...+150
Soldering temperature,
wave soldering, 1.6mm (0.063 in.) from case for 10s.
Ts
Short circuit withstand time
Value
Unit
2)
VGE = 15V, VCC  400V, Tj  150C
260
C
1
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
IFAG IPC TD VLS
2)
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
IGU04N60T
q
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
3.5
K/W
RthJA
75
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j =2 5 C
-
1.5
2.05
T j =1 7 5 C
-
1.9
-
4.1
4.9
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 0 .2m A
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 4 A
Gate-emitter threshold voltage
VGE(th)
I C = 6 0µ A ,V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
V G E = 0V
µA
T j =2 5 C
-
-
40
T j =1 7 5 C
-
40
-
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 4 A
-
2.2
-
S
Input capacitance
Ciss
V C E = 25 V ,
-
252
-
pF
Output capacitance
Coss
V G E = 0V ,
-
20
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
7.5
-
Gate charge
QGate
V C C = 48 0 V, I C =4 A
-
27
-
nC
-
7
-
nH
-
36
-
A
Dynamic Characteristic
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
IC(SC)
V G E = 15 V ,t S C  5 s
V C C = 4 0 0 V,
T j  150C
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
IFAG IPC TD VLS
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
IGU04N60T
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
14
-
-
7
-
-
164
-
-
43
-
-
61
-
-
84
-
-
145
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=25 C,
VCC=400V,IC=4A,
VGE=0/15V,
rG=47 , L =150nH,
C=47pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
µJ
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
14
-
-
10
-
-
185
-
-
83
-
-
99
-
-
97
-
-
196
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
IFAG IPC TD VLS
T j=175 C,
VCC=400V,IC=4A,
VGE=0/15V,
rG=47 , L =150nH,
C=47pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
3
ns
µJ
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
t p =2µs
10A
12A
10A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
IGU04N60T
q
T C =80°C
8A
T C =110°C
6A
4A
Ic
2A
10µs
1A
50µs
1ms
0.1A
Ic
DC
10ms
0A
10Hz
100Hz
1kHz
10kHz
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj  175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 47)
1000V
8A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
40W
30W
20W
10W
0W
25°C
10V
6A
4A
2A
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj  175C)
IFAG IPC TD VLS
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE  15V, Tj  175C)
4
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
8A
10A
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
15V
13V
6A
11V
9V
4A
7V
2A
V G E =20V
8A
15V
13V
6A
11V
9V
4A
7V
2A
0A
0A
0V
1V
2V
3V
0V
8A
6A
4A
2A
T J =175°C
25°C
0A
0V
2V
4V
6V
2V
2.5V
3V
IC =8A
2.0V
1.5V
I C =4A
1.0V
IC =2A
0.5V
0.0V
0°C
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
IFAG IPC TD VLS
1V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 175°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
IGU04N60T
q
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
IGU04N60T
q
t d(off)
t d(off)
tf
t d(on)
10ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tr
100ns
tf
t d(on)
10ns
tr
1ns
0A
2A
4A

6A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a function
of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 47Ω,
Dynamic test circuit in Figure E)




RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
t d(off)
100ns
t, SWITCHING TIMES
tf
t d(on)
10ns
tr
25°C
50°C
75°C
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function
of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, rG=47Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
6
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 60 µA)
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
*) E on and E ts include losses
*) E on and E ts include losses
due to diode recovery
E ts *
0.3m J
E off
0.2m J
E on *
0.1m J
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
due to diode recovery
0.4 m J
E ts *
0.3 m J
E off
0.2 m J
E on *
0.1 m J
0.0 m J
0.0m J
0A
2A
4A
 
6A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses as a
function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 47Ω,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
due to diode recovery
E ts *
100µJ
E off
75µJ
50µJ
E on *
25µJ
0µJ
25°C
50°C
75°C 100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 4A, rG = 47Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS



*) E on and E ts include losses
150µJ
125µJ

RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 4A,
Dynamic test circuit in Figure E)
*) E on and E ts include losses
175µJ
IGU04N60T
q
7
due to diode recovery
0.25m J
0.20m J
E ts *
0.15m J
0.10m J E off
0.05m J
E on *
0.00m J
300V
350V
400V
450V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 4A, rG = 47Ω,
Dynamic test circuit in Figure E)
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
IGU04N60T
q
15V
120V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
C iss
480V
10V
100pF
C oss
5V
10pF
C rss
0V
0nC
5nC
0V
10nC 15nC 20nC 25nC 30nC
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
12µs
60A
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=4 A)
10V 20V 30V 40V 50V 60V 70V
50A
40A
30A
20A
10A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Typical short circuit collector current
as a function of gate-emitter voltage
(VCE  400V, Tj  150C)
IFAG IPC TD VLS
10µs
8
11V
12V
13V
14V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at Tj=25°C,
Tj,max<150°C)
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
IGU04N60T
q
ZthJC, TRANSIENT THERMAL IMPEDANCE
D=0.5
0
10 K/W
0.2
R,(K/W)
0.38216
0.68326
1.49884
0.93550
0.1
R1
, (s)
5.16*10-2
7.818*10-3
9*10-4
1.134*10-4
R2
0.05
0.02
-1
10 K/W
0.01
C 1 =  1 /R 1
C 2 =  2 /R 2
single pulse
1µs
10µs
100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = tp / T)
IFAG IPC TD VLS
9
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
IGU04N60T
q
PG-TO251-3
IFAG IPC TD VLS
10
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
IGU04N60T
q
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
1
2
r1
n
r2
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
IFAG IPC TD VLS
11
Rev. 2.1 17.02.2016
TRENCHSTOP™ Series
IGU04N60T
q
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2016.
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated
herein and/or any information regarding the application of the product, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation warranties of noninfringement of intellectual property rights of any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations
stated in this document and any applicable legal requirements, norms and standards concerning customer’s
products and any use of the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility
of customer’s technical departments to evaluate the suitability of the product for the intended application and
the completeness of the product information given in this document with respect to such application.
For further information on the product, technology, delivery terms and conditions and prices please contact
your nearest Infineon Technologies office (www.infineon.com).
Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the
Automotive Electronics Council.
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any
applications where a failure of the product or any consequences of the use thereof can reasonably be
expected to result in personal injury.
IFAG IPC TD VLS
12
Rev. 2.1 17.02.2016
Similar pages