DMP4015SK3Q Green P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(ON) Max -40V 11mΩ @ VGS = -10V 15mΩ @ VGS = -4.5V ID TC = +25°C -35A -30A Description 100% Unclamped Inductive Switch (UIS) Test In Production Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Mechanical Data DC-DC Converters Power Management Functions Backlighting Case: TO252 (DPAK) Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) TO252 (DPAK) D D G S Equivalent Circuit Top View Pin-Out Top View Ordering Information (Notes 4 & 5) Part Number DMP4015SK3Q-13 Notes: Compliance Automotive Case TO252 (DPAK) Packaging 2,500/Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMP4015SK3Q Document number: DS36665 Rev. 4 - 2 1 of 8 www.diodes.com November 2015 © Diodes Incorporated DMP4015SK3Q Marking Information = Manufacturer’s Marking . P4015S = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 13 = 2013) WW = Week (01 - 53) P4015S YYWW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V Continuous Drain Current (Note 6) VGS = -10V Steady State Steady State t<10s TC = +25°C TC = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Forward Current (Note 6) Avalanche Current (Note 7) Avalanche Energy (Note 7) ID Value -40 ±25 -35 -27 ID -14 -11 -22 -18 -100 -5.5 -22 242 ID IDM IS IAS EAS Units V V A A A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: Symbol TA = +25°C TA = +70°C Steady State t<10s Steady State PD RθJA RθJC TJ, TSTG Value 3.5 2.2 36 15 4.5 -55 to +150 Units W °C/W °C 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. UIS in production with L = 0.1mH, TJ = +25°C. DMP4015SK3Q Document number: DS36665 Rev. 4 - 2 2 of 8 www.diodes.com November 2015 © Diodes Incorporated DMP4015SK3Q Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -40 -1 100 V µA nA VGS = 0V, ID = -250μA VDS = -40V, VGS = 0V VGS = 25V, VDS = 0V VGS(th) RDS(ON) |Yfs| VSD -2 7 9 26 -0.7 -2.5 11 15 -1 V Static Drain-Source On-Resistance -1.5 VDS = VGS, ID = -250μA VGS = -10V, ID = -9.8A VGS = -4.5V, ID = -9.8A VDS = -20V, ID = -9.8A VGS = 0V, IS = -1A Ciss Coss Crss RG Qg Qgs Qgd tD(on) tr tD(off) tf 4,234 1,036 526 7.77 47.5 14.2 13.5 13.2 10 302.7 137.9 Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V Test Condition pF VDS = -20V, VGS = 0V f = 1MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = -20V, VGS = -5V ID = -9.8A nS VGS = -10V, VDD = -20V, RG = 6Ω, ID = -1A 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMP4015SK3Q Document number: DS36665 Rev. 4 - 2 3 of 8 www.diodes.com November 2015 © Diodes Incorporated DMP4015SK3Q 30.0 30 -VGS = 4.0V 25 -VGS = 3.5V 20.0 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 25.0 -VGS = 4.5V 15.0 -VGS = 10V 10.0 5.0 0.0 0.5 1 1.5 -VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics R DS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 0.015 0.01 0.005 0 5 10 15 20 25 -ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 0.02 5 TA = 150 C -VGS= 4.5V TA = 125C 0.015 TA = 85C TA = 25C 0.01 TA = -55 C 0.005 5 10 15 20 25 30 -ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 5 On-Resistance Variation with Temperature Document number: DS36665 Rev. 4 - 2 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 0 0 30 1.6 DMP4015SK3Q 10 0 0 2 0.02 0 15 5 -V GS = 3.0V 0 20 4 of 8 www.diodes.com 0.020 -VGS = 4.5V -ID = 5.0A 0.016 0.012 0.008 -VGS = 10V -ID = 10A 0.004 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature November 2015 © Diodes Incorporated 2.4 30 2 25 -IS, SOURCE CURRENT (A) -V GS(TH), GATE THRESHOLD VOLTAGE (V) DMP4015SK3Q 1.6 1.2 0.8 20 15 10 5 0.4 0 -50 0 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0.2 0.4 0.6 0.8 1 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 10000 10000 f=1MHz T A =150°C -IDSS, LEAKAGE CURRENT (nA) CT , JUNCTION CAPACITANCE (pF) Ciss Coss 1000 C rss 100 0 5 10 15 20 25 VDS , DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 1000 TA =125°C TA =85°C 100 10 TA =25°C 1 0.1 5 10 15 20 25 30 -V DS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 30 10 0 100 P(pk), PEAK TRANSIENT POWER (W) VGS, GATE-SOURCE VOLTAGE (V) 1.4 8 6 4 2 Single Pulse RJA = 72°C/W RJA(t) = r(t) * RJA T J - T A = P * R JA 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics DMP4015SK3Q Document number: DS36665 Rev. 4 - 2 120 5 of 8 www.diodes.com 0 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 12 Single Pulse Maximum Power Dissipation November 2015 © Diodes Incorporated DMP4015SK3Q Starting Temperature (TJ) = 25°C 70 EAS 400 60 50 300 40 IAS 200 30 20 100 -ID, DRAIN CURRENT (A) 500 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INDUCTOR (mH) Fig. 13 Single-Pulse Avalanche Tested PW = 10µs 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(max) = 150°C PW = 100µs TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 10 0 0.1 RDS(on) Limited 80 IAS, AVALANCHE CURRENT (A) EAS, AVALANCHE ENERGY (mJ) 100 90 600 0.01 0.1 0 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 14 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.50 D = 0.02 0.01 D = 0.01 RJA(t) = r(t) * RJA RJA = 72°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.001 DMP4015SK3Q Document number: DS36665 Rev. 4 - 2 0.01 0.1 1 10 100 t1, PULSE DURATION TIMES (sec) Fig. 15 Transient Thermal Resistance 6 of 8 www.diodes.com 1,000 10,000 November 2015 © Diodes Incorporated DMP4015SK3Q Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. TO252 (DPAK) E 7°±1° c L3 D A2 L4 e TO252 (DPAK) Dim Min Max Typ A 2.19 2.39 2.29 A1 0.00 0.13 0.08 A2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 D 6.00 6.20 6.10 D1 5.21 — — e — — 2.286 E 6.45 6.70 6.58 E1 4.32 — — H 9.40 10.41 9.91 L 1.40 1.78 1.59 L3 0.88 1.27 1.08 L4 0.64 1.02 0.83 a 0° 10° — All Dimensions in mm A b3 H b(3x) b2(2x) Gauge Plane 0.508 D1 E1 Seating Plane a L A1 2.74REF Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. TO252 (DPAK) X1 Dimensions C X X1 Y Y1 Y2 Y1 Value (in mm) 4.572 1.060 5.632 2.600 5.700 10.700 Y2 C Y X DMP4015SK3Q Document number: DS36665 Rev. 4 - 2 7 of 8 www.diodes.com November 2015 © Diodes Incorporated DMP4015SK3Q IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMP4015SK3Q Document number: DS36665 Rev. 4 - 2 8 of 8 www.diodes.com November 2015 © Diodes Incorporated