DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
256Mb F-die DDR400 SDRAM Specification
66 TSOP-II with Pb-Free
(RoHS compliant)
Revision 1.1
Rev. 1.1 August. 2003
DDR SDRAM 256Mb F-die (x8, x16)
DDR SDRAM
256Mb F-die Revision History
Revison 1.0 (June. 2003)
1. First release
Revison 1.1 (August. 2003)
1. Added x8 org (K4H560838F)
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Key Features
• 200MHz Clock, 400Mbps data rate.
• VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant
Ordering Information
Part No.
Org.
K4H560838F-UCCC
32M x 8
K4H560838F-UCC4
Max Freq.
CC(DDR400@CL=3)
Interface
Package
SSTL2
66pin TSOP II
SSTL2
66pin TSOP II
C4(DDR400@CL=3)
K4H561638F-UCCC
16M x 16
K4H561638F-UCC4
CC(DDR400@CL=3)
C4(DDR400@CL=3)
Operating Frequencies
- CC(DDR400@CL=3)
- C4(DDR400@CL=3)
Speed @CL3
200MHz
200MHz
CL-tRCD-tRP
3-3-3
3-4-4
*CL : CAS Latency
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Pin Description
16Mb x 16
32Mb x 8
VDD
VDD
1
66
VSS
VSS
DQ0
DQ0
2
65
DQ7
DQ15
VDDQ
VDDQ
3
64
VSSQ
VSSQ
DQ1
NC
4
63
NC
DQ14
DQ2
DQ1
5
62
DQ6
DQ13
VSSQ
VSSQ
6
61
VDDQ
VDDQ
DQ3
NC
7
60
NC
DQ12
DQ4
DQ2
8
59
DQ5
DQ11
VDDQ
VDDQ
9
58
VSSQ
VSSQ
DQ5
NC
10
57
NC
DQ10
DQ6
DQ3
11
56
DQ4
DQ9
VSSQ
VSSQ
12
55
VDDQ
VDDQ
DQ7
NC
13
54
NC
DQ8
NC
NC
14
53
NC
NC
VDDQ
VDDQ
15
52
VSSQ
VSSQ
LDQS
NC
16
51
DQS
UDQS
NC
NC
17
50
NC
NC
VDD
VDD
18
49
VREF
VREF
NC
NC
19
48
VSS
VSS
LDM
NC
20
47
DM
UDM
WE
WE
21
46
CK
CK
CAS
CAS
22
45
CK
CK
RAS
RAS
23
44
CKE
CKE
CS
CS
24
43
NC
NC
NC
NC
25
42
A12
A12
BA0
BA0
26
41
A11
A11
BA1
BA1
27
40
A9
A9
AP/A10
AP/A10
28
39
A8
A8
A0
A0
29
38
A7
A7
A1
A1
30
37
A6
A6
A2
A2
31
36
A5
A5
A3
A3
32
35
A4
A4
VDD
VDD
33
34
VSS
VSS
66Pin TSOPII
(400mil x 875mil)
(0.65mm Pin Pitch)
Bank Address
BA0~BA1
Auto Precharge
A10
256Mb Package Pinout
Organization
Row Address
Column Address
32Mx8
A0~A12
A0-A9
16Mx16
A0~A12
A0-A8
DM is internally loaded to match DQ and DQS identically.
Row & Column address configuration
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Package Physical Demension
0.30±0.08
(10×)
NOTE
1. (
) IS REFERENCE
2. [
] IS ASS’Y OUT QUALITY
(10.16)
(4 ×
)
1.20MAX
0.10 MAX
[
0.075 MAX ]
0.2
5)
0.65TYP
0.65±0.08
(0.50)
0.25TYP
(R
(0.71)
1.00±0.10
(10×)
0.05 MIN
0.210±0.05
(R
0.
15
)
0.665±0.05
22.22±0.10
(R
0.1
5)
0.125 +0.075
-0.035
(R
0.
25
)
(0.80)
#33
(1.50)
(10×)
0.45~0.75
(1.50)
(10×)
#1
11.76±0.20
(0.80)
#34
10.16±0.10
#66
(0.50)
Units : Millimeters
0×~8×
66pin TSOPII / Package dimension
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Block Diagram (8Mb x 8 / 4Mb x 16 I/O x 4 Banks)
CK, CK
(L)WE
I/O Control
8/16
Data Input Register
L(U)DM
Serial to parallel
Bank Select
16/32
4Mx16 / 2Mx32
8/16
Output Buffer
16/32
2-bit prefetch
4Mx16 / 2Mx32
Sense AMP
Row Decoder
Refresh Counter
Row Buffer
ADD
Address Register
CK, CK
4Mx16 / 2Mx32
x8/x16
DQi
4Mx16 / 2Mx32
Column Decoder
Col. Buffer
LCBR
LRAS
Latency & Burst Length
Strobe
Gen.
DLL
Programming Register
Data Strobe
LCKE
LRAS LCBR
LWE
L(U)DM
LCAS
CK, CK
CKE
CS
RAS
LWCBR
CK, CK
Timing Register
DM Input Register
CAS
L(U)DM
WE
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Input/Output Function Description
SYMBOL
TYPE
DESCRIPTION
CK, CK
Input
Clock : CK and CK are differential clock inputs. All address and control input signals are sampled on the positive edge of CK and negative edge of CK. Output (read) data is referenced to
both edges of CK. Internal clock signals are derived from CK/CK.
CKE
Input
Clock Enable : CKE HIGH activates, and CKE LOW deactivates internal clock signals, and
device input buffers and output drivers. Deactivating the clock provides PRECHARGE
POWER-DOWN and SELF REFRESH operation (all banks idle), or ACTIVE POWER-DOWN
(row ACTIVE in any bank). CKE is synchronous for all functions except for disabling outputs,
which is achieved asynchronously. Input buffers, excluding CK, CK and CKE are disabled during power-down and self refresh modes, providing low standby power. CKE will recognize an
LVCMOS LOW level prior to VREF being stable on power-up.
CS
Input
Chip Select : CS enables(registered LOW) and disables(registered HIGH) the command
decoder. All commands are masked when CS is registered HIGH. CS provides for external
bank selection on systems with multiple banks. CS is considered part of the command code.
RAS, CAS, WE
Input
Command Inputs : RAS, CAS and WE (along with CS) define the command being entered.
LDM,(UDM)
Input
Input Data Mask : DM is an input mask signal for write data. Input data is masked when DM is
sampled HIGH along with that input data during a WRITE access. DM is sampled on both
edges of DQS. Although DM pins are input only, the DM loading matches the DQ and DQS
loading. For the x16, LDM corresponds to the data on DQ0~D7 ; UDM corresponds to the data
on DQ8~DQ15. DM may be driven high, low, or floating during READs.
BA0, BA1
Input
Bank Addres Inputs : BA0 and BA1 define to which bank an ACTIVE, READ, WRITE or PRECHARGE command is being applied.
A [0 : 12]
Input
Address Inputs : Provide the row address for ACTIVE commands, and the column address and
AUTO PRECHARGE bit for READ/WRITE commands, to select one location out of the memory array in the respective bank. A10 is sampled during a PRECHARGE command to determine whether the PRECHARGE applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also
provide the op-code during a MODE REGISTER SET command. BA0 and BA1 define which
mode register is loaded during the MODE REGISTER SET command (MRS or EMRS).
A12 & A13 are used on device densities of 256Mb and greater, and A13 is used only on 1Gb
decices.
DQ
I/O
Data Input/Output : Data bus
LDQS,(U)DQS
I/O
Data Strobe : Output with read data, input with write data. Edge-aligned with read data, centered in write data. Used to capture write data. For the x16, LDQS corresponds to the data on
DQ0~D7 ; UDQS corresponds to the data on DQ8~DQ15
NC
-
VDDQ
Supply
DQ Power Supply : +2.6V ± 0.1V.
VSSQ
Supply
DQ Ground.
VDD
Supply
Power Supply : +2.6V ± 0.1V (device specific).
VSS
Supply
Ground.
VREF
Input
No Connect : No internal electrical connection is present.
SSTL_2 reference voltage.
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Command Truth Table
(V=Valid, X=Don′t Care, H=Logic High, L=Logic Low)
COMMAND
Register
Register
CKEn-1 CKEn
Extended MRS
H
Mode Register Set
H
Auto Refresh
Refresh
Entry
Self
Refresh
Exit
Bank Active & Row Addr.
Read &
Column Address
Auto Precharge Disable
Write &
Column Address
Auto Precharge Disable
WE
X
L
L
L
L
OP CODE
1, 2
X
L
L
L
L
OP CODE
1, 2
L
L
L
H
X
L
L
H
H
X
L
H
H
H
H
X
X
X
L
L
H
H
V
L
H
L
H
V
H
X
L
H
L
L
V
H
X
L
H
H
L
H
X
L
L
H
L
Entry
H
L
H
X
X
X
L
V
V
V
Exit
L
H
X
X
X
X
Entry
H
L
Exit
L
H
Bank Selection
All Banks
Precharge Power Down Mode
DM(UDM/LDM for x16 only)
H
No operation (NOP) : Not defined
H
H
X
X
X
L
H
H
H
H
X
X
X
L
V
V
V
X
X
X
X
X
L
H
H
H
3
3
3
Row Address
L
Column
Address
H
L
Column
Address
H
X
V
L
X
H
4
4
4
4, 6
7
X
5
X
X
X
H
Note
3
X
X
Auto Precharge Enable
Active Power Down
CAS
H
Auto Precharge Enable
Burst Stop
Precharge
H
RAS
H
BA0,1 A10/AP
A0 ~ A9,
A11, A12
CS
X
8
9
9
Note : 1. OP Code : Operand Code. A0 ~ A12 & BA0 ~ BA1 : Program keys. (@EMRS/MRS)
2. EMRS/MRS can be issued only at all banks precharge state.
A new command can be issued 2 clock cycles after EMRS or MRS.
3. Auto refresh functions are same as the CBR refresh of DRAM.
The automatical precharge without row precharge command is meant by "Auto".
Auto/self refresh can be issued only at all banks precharge state.
4. BA0 ~ BA1 : Bank select addresses.
If both BA0 and BA1 are "Low" at read, write, row active and precharge, bank A is selected.
If BA0 is "High" and BA1 is "Low" at read, write, row active and precharge, bank B is selected.
If BA0 is "Low" and BA1 is "High" at read, write, row active and precharge, bank C is selected.
If both BA0 and BA1 are "High" at read, write, row active and precharge, bank D is selected.
5. If A10/AP is "High" at row precharge, BA0 and BA1 are ignored and all banks are selected.
6. During burst write with auto precharge, new read/write command can not be issued.
Another bank read/write command can be issued after the end of burst.
New row active of the associated bank can be issued at tRP after the end of burst.
7. Burst stop command is valid at every burst length.
8. DM(x4/8) sampled at the rising and falling edges of the DQS and Data-in are masked at the both edges (Write DM latency is 0).
UDM/LDM(x16 only) sampled at the rising and falling edges of the UDQS/LDQS and Data-in are masked at the both edges
(Write UDM/LDM latency is 0).
9. This combination is not defined for any function, which means "No Operation(NOP)" in DDR SDRAM.
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
8M x 8bit x 4 Banks / 4M x 16Bit x 4 Banks Double Data Rate SDRAM
General Description
The K4H560838F / K4H561638F is 268,435,456 bits of double data rate synchronous DRAM organized as 4x 8,388,608 / 4x 4,194,304
words by 8 / 16bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 400Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory
system applications.
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA=0 to 70°C)
Parameter
Supply voltage(for device with a nominal VDD of 2.5V)
Symbol
Min
Max
VDD
2.5
2.7
Unit
Note
5
I/O Supply voltage
VDDQ
2.5
2.7
V
5
I/O Reference voltage
VREF
0.49*VDDQ
0.51*VDDQ
V
1
I/O Termination voltage(system)
VTT
VREF-0.04
VREF+0.04
V
2
VIH(DC)
VREF+0.15
VDDQ+0.3
V
Input logic high voltage
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
V
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
V
Input Differential Voltage, CK and CK inputs
VID(DC)
0.36
VDDQ+0.6
V
3
V-I Matching: Pullup to Pulldown Current Ratio
VI(Ratio)
0.71
1.4
-
4
II
-2
2
uA
Output leakage current
IOZ
-5
5
uA
Output High Current(Normal strengh driver) ;VOUT = VTT + 0.84V
Input leakage current
IOH
-16.8
Output High Current(Normal strengh driver) ;VOUT = VTT - 0.84V
mA
IOL
16.8
mA
Output High Current(Half strengh driver) ;VOUT = VTT + 0.45V
IOH
-9
mA
Output High Current(Half strengh driver) ;VOUT = VTT - 0.45V
IOL
9
mA
Note : 1.VREF is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of same.
Peak-to peak noise on VREF may not exceed +/-2% of the dc value.
2. VTT is not applied directly to the device. VTT is a system supply for signal termination resistors, is expected to be set equal to
VREF, and must track variations in the DC level of VREF
3. VID is the magnitude of the difference between the input level on CK and the input level on CK.
4. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire
temperature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the
maximum difference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the
maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
5. This is the DC voltage supplied at the DRAM and is inclusive of all noise up to 20MHz. Any noise above 20MHz at the DRAM
generated from any source other than the DRAM itself may not exceed the DC voltage range of 2.6V +/-100mV.
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
DDR SDRAM Spec Items & Test Conditions
Conditions
Symbol
Operating current - One bank Active-Precharge;
tRC=tRCmin; tCK=5ns for DDR400; DQ,DM and DQS inputs changing once per clock cycle;
address and control inputs changing once every two clock cycles; CS = high between valid commands.
IDD0
Operating current - One bank operation ; One bank open, BL=4, Reads
- Refer to the following page for detailed test condition; CS = high between valid commands.
IDD1
Percharge power-down standby current; All banks idle; power - down mode; CKE = <VIL(max); tCK=5ns for
DDR400; Vin = Vref for DQ,DQS and DM.
IDD2P
Precharge Floating standby current; CS# > =VIH(min);All banks idle; CKE > = VIH(min); tCK=5ns for DDR400;
Address and other control inputs changing once per clock cycle; Vin = Vref for DQ,DQS and DM
IDD2F
Precharge Quiet standby current; CS# > = VIH(min); All banks idle;
CKE > = VIH(min); tCK=5ns for DDR400; Address and other control inputs stable at >= VIH(min) or =<VIL(max);
Vin = Vref for DQ ,DQS and DM
IDD2Q
Active power - down standby current ; one bank active; power-down mode; CKE=< VIL (max); tCK=5ns
DDR400; Vin = Vref for DQ,DQS and DM
IDD3P
Active standby current; CS# >= VIH(min); CKE>=VIH(min);
one bank active; active - precharge; tRC=tRASmax; tCK=5ns for DDR400; DQ, DQS and DM inputs changing twice
per clock cycle; address and other control inputs changing once per clock cycle
IDD3N
Operating current - burst read; Burst length = 2; reads; continguous burst; One bank active; address and control
inputs changing once per clock cycle; CL=3 at 5ns for DDR400; 50% of data changing on every transfer; lout = 0 m
A
IDD4R
Operating current - burst write; Burst length = 2; writes; continuous burst;
One bank active address and control inputs changing once per clock cycle; CL=3 at tCK=5ns for DDR400; DQ, DM
and DQS inputs changing twice per clock cycle, 50% of input data changing at every transfer
IDD4W
Auto refresh current; tRC = tRFC(min) - 14*tCK for DDR400 at tCK=5ns;
IDD5
Self refresh current; CKE =< 0.2V; External clock on; tCK = 5ns for DDR400.
IDD6
Input/Output Capacitance
Parameter
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
(VDD=2.6, VDDQ=2.6V, TA= 25°C, f=1MHz)
Symbol
Min
Max
Delta
Unit
Note
CIN1
2
3
0.5
pF
4
0.25
pF
4
pF
1,2,3,4
pF
1,2,3,4
Input capacitance( CK, CK )
CIN2
2
3
Data & DQS input/output capacitance
COUT
4
5
Input capacitance(DM for 8, UDM/LDM for x16)
CIN3
4
5
0.5
Note : 1.These values are guaranteed by design and are tested on a sample basis only.
2. Although DM is an input -only pin, the input capacitance of this pin must model the input capacitance of the DQ and DQS pins.
This is required to match signal propagation times of DQ, DQS, and DM in the system.
3. Unused pins are tied to ground.
4. This parameteer is sampled. VDDQ = +2.6V +0.1V, VDD = +2.6V +0.1V, f=100MHz, tA=25°C, Vout(dc) =
VDDQ/2, Vout(peak to peak) = 0.2V. DM inputs are grouped with I/O pins - reflecting the fact that they are matched in loading
(to facilitate trace matching at the board level).
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
DDR SDRAM IDD spec table
Symbol
(VDD=2.7V, T = 10°C)
32Mx8
Unit
- CC(DDR400@CL=3)
- C4(DDR400@CL=3)
IDD0
105
100
mA
IDD1
130
130
mA
mA
IDD2P
4
4
IDD2F
30
30
mA
IDD2Q
25
25
mA
IDD3P
55
55
mA
IDD3N
75
75
mA
IDD4R
185
185
mA
IDD4W
220
220
mA
IDD5
200
200
mA
mA
IDD6
Normal
3
3
Low power
1.5
1.5
mA
350
350
mA
IDD7A
Symbol
16Mx16
- CC(DDR400@CL=3)
- C4(DDR400@CL=3)
Unit
IDD0
110
105
IDD1
150
145
mA
IDD2P
4
4
mA
IDD2F
30
30
mA
25
25
mA
IDD3P
55
55
mA
IDD3N
75
75
mA
IDD4R
220
220
mA
IDD4W
250
250
mA
IDD5
200
200
mA
3
3
mA
Normal
Low power
IDD7A
Optional
Notes
mA
IDD2Q
IDD6
Notes
1.5
1.5
mA
380
380
mA
Optional
Rev. 1.1 August. 2003
DDR SDRAM 256Mb F-die (x8, x16)
DDR SDRAM
< Detailed test conditions for DDR SDRAM IDD1 & IDD7A >
IDD1 : Operating current: One bank operation
1. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs change logic state once per Deselect cycle.
Iout = 0mA
2. Timing patterns
- CC/C4(200Mhz,CL=3) : tCK=5ns, CL=3, BL=4, tRCD=3*tCK(CC) 4*tCK(C4), tRC=11*tCK(CC) 12*tCK(C4), tRAS=8*tCK
Setup : A0 N N R0 N N N N P0 N N
Read : A0 N N R0 N N N N P0 N N - repeat the same timing with random address changing
*50% of data changing at every transfer
IDD7A : Operating current: Four bank operation
1. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on Deselet edge are not changing.
Iout = 1mA
2. Timing patterns
- CC/C4(200Mhz,CL=3) : tCK=5ns, CL=3, BL=4, tRCD=3*tCK(CC) 4*tCK(C4), tRC=11*tCK(CC) 12*tCK(C4), tRAS=8*tCK
Setup : A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N N
Read : A0 N A1 RA0 A2 RA1 A3 RA2 N RA3 N N - repeat the same timing with random address changing
*50% of data changing at every transfer
Legend : A = Activate, R=Read, W=Write, P=Precharge, N=NOP
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
AC Operating Conditions
Symbol
Min
Input High (Logic 1) Voltage, DQ, DQS and DM signals
Parameter/Condition
VIH(AC)
VREF + 0.31
Max-10
Unit
Note
Input Low (Logic 0) Voltage, DQ, DQS and DM signals.
VIL(AC)
Input Differential Voltage, CK and CK inputs
VID(AC)
0.7
VDDQ+0.6
V
1
Input Crossing Point Voltage, CK and CK inputs
VIX(AC)
0.5*VDDQ-0.2
0.5*VDDQ+0.2
V
2
V
VREF - 0.31
V
Notes :
1. VID is the magnitude of the difference between the input level on CK and the input level on /CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
AC Overshoot/Undershoot specification for Address and Control Pins
Specification
Parameter
DDR400
Maximum peak amplitude allowed for overshoot
1.5V
Maximum peak amplitude allowed for undershoot
1.5V
The area between the overshoot signal and VDD must be less than or equal to
4.5V-ns
The area between the undershoot signal and GND must be less than or equal to
4.5V-ns
VDD
Overshoot
5
Maximum Amplitude = 1.5V
4
3
Volts (V)
2
Area = 4.5V-ns
1
0
-1
-2
-3
Maximum Amplitude = 1.5V
GND
-4
-5
0
0.6875
1.5
2.5
3.5
4.5
5.5
6.3125
7.0
0.5
1.0
2.0
3.0
4.0
5.0
6.0
6.5
Tims(ns)
undershoot
AC overshoot/Undershoot Definition
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Overshoot/Undershoot specification for Data, Strobe, and Mask Pins
Specification
Parameter
DDR400
Maximum peak amplitude allowed for overshoot
1.2V
Maximum peak amplitude allowed for undershoot
1.2V
The area between the overshoot signal and VDD must be less than or equal to
2.5V-ns
The area between the undershoot signal and GND must be less than or equal to
2.5V-ns
VDDQ
Overshoot
5
Maximum Amplitude = 1.2V
4
3
Volts (V)
2
1
Area = 2.5V-ns
0
-1
-2
-3
Maximum Amplitude = 1.2V
GND
-4
-5
0 0.5 1.0 1.42 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5.68 6.0 6.5 7.0
Tims(ns)
undershoot
DQ/DM/DQS AC overshoot/Undershoot Definition
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
AC Timing Parameters and Specifications
Parameter
Symbol
Row cycle time
- CC(DDR400@CL=3)
Min
Max
- C4(DDR400@CL=3)
Min
tRC
55
Refresh row cycle time
tRFC
70
Row active time
tRAS
40
RAS to CAS delay
tRCD
15
18
Row precharge time
Row active to Row active delay
Write recovery time
Internal write to read command delay
Clock cycle time
CL=3.0
CL=2.5
Clock high level width
Clock low level width
Max
60
ns
40
70K
ns
ns
tRP
15
18
ns
tRRD
10
10
ns
tWR
15
15
ns
tWTR
2
2
tCK
tCK
tCH
5
10
5
10
ns
6
12
6
12
ns
0.45
0.55
0.45
0.55
tCK
tCL
0.45
0.55
0.45
0.55
tCK
tDQSCK
-0.55
+0.55
-0.55
+0.55
ns
Output data access time from CK/CK
tAC
-0.65
+0.65
-0.65
+0.65
ns
Data strobe edge to ouput data edge
tDQSQ
-
0.4
-
0.4
ns
Read Preamble
tRPRE
0.9
1.1
0.9
1.1
tCK
Read Postamble
tRPST
0.4
0.6
0.4
0.6
tCK
1.28
0.72
1.28
tCK
DQS-out access time from CK/CK
CK to valid DQS-in
tDQSS
0.72
tWPRES
0
Write preamble
tWPRE
0.25
Write postamble
tWPST
0.4
tDSS
0.2
Write preamble setup time
DQS falling edge to CK rising-setup time
DQS falling edge from CK rising-hold time
0
ps
0.25
0.6
Note
ns
70
70K
Unit
16
13
5
tCK
0.4
0.6
0.2
tCK
4
tCK
tDSH
0.2
0.2
tCK
DQS-in high level width
tDQSH
0.35
0.35
tCK
DQS-in low level width
tDQSL
0.35
0.35
tCK
tIS
0.6
0.6
ns
h,7~10
Address and Control Input hold time
tIH
0.6
ns
h,7~10
Data-out high impedence time from CK/CK
tHZ
-
tAC max
-
tAC max
ns
3
tAC max
tAC min
tAC max
ns
3
Address and Control Input setup time
0.6
tLZ
tAC min
tMRD
2
2
tCK
DQ & DM setup time to DQS, slew rate 0.5V/ns
tDS
0.4
0.4
ns
i, j
DQ & DM hold time to DQS, slew rate 0.5V/ns
tDH
0.4
0.4
ns
i, j
tDIPW
1.75
1.75
ns
9
Control & Address input pulse width for each input
tIPW
2.2
Refresh interval time
tREFI
Data-out low impedence time from CK/CK
Mode register set cycle time
DQ & DM input pulse width
2.2
7.8
ns
9
7.8
us
6
Output DQS valid window
tQH
tHP
-tQHS
-
tHP
-tQHS
-
ns
12
Clock half period
tHP
min
tCH/tCL
-
min
tCH/tCL
-
ns
11, 12
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
Parameter
Symbol
Data hold skew factor
tQHS
Auto Precharge write recovery + precharge time
tDAL
- CC(DDR400@CL=3)
Min
Max
- C4(DDR400@CL=3)
Min
0.5
-
Exit self refresh to non-READ command
tXSNR
75
Exit self refresh to READ command
tXSRD
200
-
-
-
200
Unit
Note
0.5
ns
12
-
ns
14
ns
15
-
tCK
Max
75
Component Notes
1.VID is the magnitude of the difference between the input level on CK and the input level on CK.
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the dc level of the same.
3. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. these parameters are not referenced to a
specific voltage level but specify when the device output in no longer driving (HZ), or begins driving (LZ).
4. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but sys
tem performance (bus turnaround) will degrade accordingly.
5. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A
valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were previ
ously in progress on the bus, DQS will be tran sitioning from High- Z to logic LOW. If a previous write was in progress, DQS could
be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
6. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
7. For command/address input slew rate ≥ 0.5 V/ns
8. For CK & CK slew rate ≥ 0.5 V/ns
9. These parameters guarantee device timing, but they are not necessarily tested on each device. They may be guaranteed by
device design or tester correlation.
10. Slew Rate is measured between VOH(ac) and VOL(ac).
11. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).....For example, tCL and tCH are = 50% of the
period, less the half period jitter (tJIT(HP)) of the clock source, and less the half period jitter due to crosstalk (tJIT(crosstalk)) into
the clock traces.
12. tQH = tHP - tQHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The
pulse duration distortion of on-chip clock circuits; and 2) The worst case push-out of DQS on one tansition followed by the worst
case pull-in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects, and pchannel to n-channel variation of the output drivers.
13. tDQSQ
Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given
cycle.
14. tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer. Example: For DDR400(CC) at CL=3 and
tCK=5ns tDAL = (15 ns / 5 ns) + (15 ns/ 5ns) = {(3) + (3)}CLK
tDAL = 6 clocks
15. In all circumstances, tXSNR can be satisfied using tXSNR=tRFCmin+1*tCK
16. The only time that the clock frequency is allowed to change is during self-refresh mode.
Rev. 1.1 August. 2003
DDR SDRAM
DDR SDRAM 256Mb F-die (x8, x16)
System Characteristics for DDR SDRAM
The following specification parameters are required in systems using DDR400 devices to ensure proper system performance. these characteristics are for system simulation purposes and are guaranteed by design.
Table 1 : Input Slew Rate for DQ, DQS, and DM
AC CHARACTERISTICS
DDR400
PARAMETER
SYMBOL
MIN
MAX
Units
Notes
DQ/DM/DQS input slew rate measured between
VIH(DC), VIL(DC) and VIL(DC), VIH(DC)
DCSLEW
0.5
4.0
V/ns
a, k
Table 2 : Input Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tIS
tIH
Units
Notes
0.5 V/ns
0
0
ps
h
0.4 V/ns
+50
0
ps
h
0.3 V/ns
+100
0
ps
h
Table 3 : Input/Output Setup & Hold Time Derating for Slew Rate
Input Slew Rate
tDS
tDH
Units
0.5 V/ns
0
0
ps
Notes
j
0.4 V/ns
+75
+75
ps
j
0.3 V/ns
+150
+150
ps
j
Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate
Delta Slew Rate
tDS
tDH
Units
Notes
i
+/- 0.0 V/ns
0
0
ps
+/- 0.25 V/ns
+50
+50
ps
i
+/- 0.5 V/ns
+100
+100
ps
i
Table 5 : Output Slew Rate Characteristice (X8 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
1.0
4.5
a,c,d,f,g
Pulldown slew
1.2 ~ 2.5
1.0
4.5
b,c,d,f,g
Table 6 : Output Slew Rate Characteristice (X16 Devices only)
Slew Rate Characteristic
Typical Range
(V/ns)
Minimum
(V/ns)
Maximum
(V/ns)
Notes
Pullup Slew Rate
1.2 ~ 2.5
0.7
5.0
a,c,d,f,g
Pulldown slew
1.2 ~ 2.5
0.7
5.0
b,c,d,f,g
Table 7 : Output Slew Rate Matching Ratio Characteristics
AC CHARACTERISTICS
PARAMETER
Output Slew Rate Matching Ratio (Pullup to Pulldown)
DDR400
MIN
MAX
Notes
-
-
e,k
Rev. 1.1 August. 2003
DDR SDRAM 256Mb F-die (x8, x16)
DDR SDRAM
System Notes :
a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1.
Test point
Output
50Ω
VSSQ
Figure 1 : Pullup slew rate test load
b. Pulldown slew rate is measured under the test conditions shown in Figure 2.
VDDQ
50Ω
Output
Test point
Figure 2 : Pulldown slew rate test load
c. Pullup slew rate is measured between (VDDQ/2 - 320 mV +/- 250 mV)
Pulldown slew rate is measured between (VDDQ/2 + 320 mV +/- 250 mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output
switching.
Example : For typical slew rate, DQ0 is switching
For minmum slew rate, all DQ bits are switching from either high to low, or low to high.
For Maximum slew rate, only one DQ is switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
d. Evaluation conditions
Typical : 25 °C (T Ambient), VDDQ = 2.6V, typical process
Minimum : 70 °C (T Ambient), VDDQ = 2.5V, slow - slow process
Maximum : 0 °C (T Ambient), VDDQ = 2.7V, fast - fast process
e. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature and
voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process variation.
f. Verified under typical conditions for qualification purposes.
g. TSOPII package divices only.
h. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5V/ns
as shown in Table 2. The Input slew rate is based on the lesser of the slew rates detemined by either VIH(AC) to VIL(AC) or
VIH(DC) to VIL(DC), similarly for rising transitions.
i. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables 3 & 4.
Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, Input slew rate is based on the lesser of the
slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions.
The delta rise/fall rate is calculated as:
{1/(Slew Rate1)} - {1/(Slew Rate2)}
For example : If Slew Rate 1 is 0.5 V/ns and slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is - 0.5ns/V . Using the table given, this
would result in the need for an increase in tDS and tDH of 100 ps.
Rev. 1.1 August. 2003
DDR SDRAM 256Mb F-die (x8, x16)
DDR SDRAM
j. Table 3 is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the lesser
on the lesser of the AC - AC slew rate and the DC- DC slew rate. The inut slew rate is based on the lesser of the slew rates deter
mined by either VIH(ac) to VIL(ac) or VIH(DC) to VIL(DC), and similarly for rising transitions.
k. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal transi
tions through the DC region must be monotony.
Rev. 1.1 August. 2003