ATMEL AT27BV800-12RC 8-megabit 512k x 16 or 1024k x 8 unregulated battery-voltage high speed otp eprom Datasheet

Features
• Read Access Time - 120 ns
• Word-wide or Byte-wide Configurable
• Dual Voltage Range Operation
•
•
•
•
•
•
•
•
– Unregulated Battery Power Supply Range, 2.7V to 3.6V
or Standard 5V ± 10% Supply Range
8-Megabit Flash and Mask ROM Compatable
Low Power CMOS Operation
– 20 µA Maximum Standby
– 10 mA Max. Active at 5 MHz for VCC = 3.6V
JEDEC Standard Packages
– 44-Lead PLCC
– 44-Lead SOIC (SOP)
– 48-Lead TSOP (12 mm x 20 mm)
High Reliability CMOS Technology
– 2,000 ESD Protection
– 200 mA Latchup Immunity
Rapid™ Programming Algorithm - 50 µs/word (typical)
CMOS and TTL Compatible Inputs and Outputs
– JEDEC Standard for LVTTL and LVBO
Integrated Product Identification Code
Commercial and Industrial Temperature Ranges
8-Megabit
(512K x 16 or
1024K x 8)
Unregulated
Battery-Voltage™
High Speed
OTP EPROM
Description
The AT27BV800 is a high performance low-power, low-voltage 8,388,608-bit one time
programmable read only memory (OTP EPROM) organized as either 512K by 16 or
1024K by 8 bits. It requires only one supply in the range of 2.7 to 3.6V in normal read
(continued)
PLCC
Addresses
O0 - O15
Outputs
O15/A-1
Output/Address
BYTE/VPP
Byte Mode/
Program Supply
CE
Chip Enable
OE
Output Enable
NC
No Connect
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
6
5
4
3
2
1
44
43
42
41
40
A0 - A18
7
8
9
10
11
12
13
14
15
16
17
39
38
37
36
35
34
33
32
31
30
29
A12
A13
A14
A15
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
18
19
20
21
22
23
24
25
26
27
28
Function
O9
O2
O16
O3
O11
NC
VCC
O4
O12
O5
O13
Pin Name
A5
A6
A7
A17
A18
GND
NC
A8
A9
A10
A11
Pin Configurations
TSOP
Type 1
AT27BV800
Preliminary
AT27BV800
Preliminary
SOIC (SOP)
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
O0
O8
O1
O9
O2
O10
O3
O11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
O13
O5
O12
O4
VCC
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
NC
NC
NC
NC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE/VPP
GND
O15/A-1
O7
O14
O6
O13
O5
O12
O4
VCC
O11
O3
O10
O2
O9
O1
O8
O0
OE
GND
CE
A0
Rev. 0988B–03/98
1
mode operation. The x16 organization makes this part ideal
for portable and hand held 16- and 32-bit microprocessor
based systems using either regulated or unregulated battery power.
Atmel’s innovative design techniques provide fast speeds
that rival 5V parts while keeping the low power consumption of a 3V supply. At V CC = 2.7V, any word can be
accessed in less than 120ns. With a typical power dissipation of only 10 mW at 5mHZ and VCC = 3V, the AT27BV800
consumes less than one fifth the power of a standard 5V
EPROM.
Standby mode supply current is typically less than 1 mA at
3V. The AT27BV800 simplifies system design and
stretches battery lifetime even further by eliminating the
need for power supply regulation.
The AT27BV800 can be organized as either word-wide or
byte-wide. The organization is selected via the BYTE/VPP
pin. When BYTE/VPP is asserted high (VIH), the word-wide
organization is selected and the O15/A-1 pin is used for
O15 data output. When BYTE/VPP is asserted low (V IL),the
byte wide organization is selected and the O15/A-1 pin is
used for the address pin A-1. When the AT27BV800 is logically regarded as x16 (word-wide), but read in the bytewide mode, then with A-1=VIL the lower eight bits of the 16
bit word are selected with A-1 =VIH the upper 8 bits of the
16-bit word are selected.
The AT27BV800 is available in industry standard JEDECapproved one-time programmable (OTP) PLCC, SOIC
(SOP), and TSOP packages. The device features two-line
control(CE,OE) to eliminate bus contention in high-speed
systems.
With high density 512K word or 1024K-bit storage capability, the AT27BV800 allows firmware to be to be stored reliably and to be accessed by the system without the delays
of mass storage media.
Block Diagram
2
AT27BV800
The AT27BV800 operating with VCC at 3.0V produces TTL
level outputs that are compatible with standard TTL logic
devices operating at VCC = 5V. At V CC = 2.7V, the part is
compatible with JEDEC approved low voltage battery operation (LVBO) interface specifications. The device is also
capable of standard 5-volt operation making it ideally suited
for dual supply range systems or card products that are
pluggable in both 3-volt and 5-volt hosts.
Atmel’s AT27BV800 has additional features that ensure
high quality and efficient production use. The RapidTM Programming Algorithm reduces the time required to program
the part and guarantees reliable programming. Programming time is typically only 50µs/word. The Integrated Product Identification Code electronically identifies the device
and manufacturer. This feature is used by industry standard
programming equipment to select the proper programming
equipment and voltages. The AT27BV800 programs
exactly the same way as a standard 5V AT27C800 and
uses the same programming equipment.
System Considerations
Switching between active and standby conditions via the
Chip Enable pin may produce transient voltage excursions.
Unless accommodated by the system design, these transients may exceed data sheet limits, resulting in device
non-conformance. At a minimum, a 0.1 µF high frequency,
low inherent inductance, ceramic capacitor should be utilized for each device. This capacitor should be connected
between the V CC and Ground terminals of the device, as
close to the device as possible. Additionally, to stabilize the
supply voltage level on printed circuit boards with large
EPROM arrays, a 4.7 µF bulk electrolytic capacitor should
be utilized, again connected between the VCC and Ground
terminals. This capacitor should be positioned as close as
possible to the point where the power supply is connected
to the array.
AT27BV800
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55°C to +125°C
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect device
reliability.
Note:
Minimum voltage is -0.6V DC which may undershoot to -2.0V for pulses of less than 20 ns. Maximum output pin voltage is Vcc + 0.75V DC which
may overshoot to + 7.0V for pulses of less than
20 ns.
Storage Temperature ..................................... -65°C to +150°C
Voltage on Any Pin with
with Respect to Ground ..................................-2.0V to +7.0V(1)
Voltage on A9 with
Respect to Ground ......................................-2.0V to +14.0V(1)
VPP Supply Voltage with
Respect to Ground .......................................-2.0V to +14.0V(1)
1.
Operating Modes
Outputs
Mode/Pin
CE
Read Word-wide
Read Byte-wide Upper
Read Byte-wide Lower
VIL
VIL
VIL
OE
VIL
VIL
VIL
BYTE/VPP
O0-O7
O8-O14
O15/A-1
(1)
VIH
DOUT
DOUT
DOUT
(1)
VIL
DOUT
High Z
VIH
(1)
VIL
DOUT
High Z
VIL
(1)
X
Ai
X
X
X
(1)
VIH
VIH
(1)
X
Rapid Program
VIL
VIH
Ai
VPP
DIN
PGM Verify
X
VIL
Ai
VPP
DOUT
VPP
High Z
Output Disable
X
Standby
(3)
PGM Inhibit
VIH
VIH
X
(1)
X
VIL
VIL
X
(1)
X
A9 = VH
Product Identification(5)
(6)
High Z
High Z
(4)
A0 = VIH or VIL
VIH
Identification Code
A1 - A18 = VIL
Notes:
1. X can be VIL or VIH.
2. Read, output disable, and standby modes require, 2.7V ≤ VCC ≤ 3.6V, or 4.5V ≤ VCC ≤ 5.5V.
3. Refer to the programming characteristics tables in this data sheet.
4. VH = 12.0 ± 0.5V.
5. Two identifier words may be selected. All Ai inputs are held low (VIL) except A9,which is set to VH , and A0, which is toggled
low (VIL) to select the Manufacturer’s Identification word and high (VIH) to select the Device Code word.
6. Standby VCC current (ISB) is specified with VPP = VCC . VCC > VPP will cause a slight increase in ISB.
3
DC and AC Operating Conditions for Read Operation
AT27BV800
Com.
-12
-15
0°C - 70°C
0°C - 70°C
-40°C - 85°C
-40°C - 85°C
2.7V to 3.6V
2.7V to 3.6V
5V ± 10%
5V ± 10%
Operating Temperature (Case)
Ind.
VCC Power Supply
= Preliminary
DC and Operating Characteristics for Read Operation
Symbol
Parameter
Condition
Min
Max
Units
VCC = 2.7V to 3.6V
ILI
ILO
IPP1
(2)
Input Load Current
VIN = 0V to VCC
±1
µA
Output Leakage Current
VOUT = 0V to VCC
±5
µA
VPP = VCC
10
µA
ISB1 (CMOS), CE = VCC ± 0.3V
20
µA
ISB2 (TTL), CE = 2.0 to VCC + 0.5V
100
mA
f = 5MHz, IOUT = 0 mA, CE = VIL, VCC = 3.6V
10
mA
VPP
(1)
Read/Standby Current
ISB
VCC(1) Standby Current
ICC
VCC Active Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
VOH
Output Low Voltage
Output High Voltage
VCC = 3.0 to 3.6V
-0.6
0.8
V
VCC = 2.7 to 3.6V
-0.6
0.2 x VCC
V
VCC = 3.0 to 3.6V
2.0
VCC + 0.5
V
VCC = 2.7 to 3.6V
0.7 x VCC
VCC + 0.5
V
IOL = 2.0 mA
0.4
V
IOL = 100 µA
0.2
V
IOL = 20 µA
0.1
V
IOH = -2.0 mA
2.4
V
IOH = -100 µA
VCC - 0.2
V
IOH = -20 µA
VCC - 0.1
V
VCC = 4.5V to 5.5V
ILI
Input Load Current
VIN = 0V to VCC
±1.0
µA
ILO
Output Leakage Current
VOUT = 0V to VCC
±5.0
µA
IPP1(2)
VPP(1) Read/Standby Current
VPP = VCC
10
µA
VCC(1) Standby Current
ISB1 (CMOS), CE = VCC ± 0.3V
100
µA
ISB
ISB2 (TTL), CE = 2.0 to VCC + 0.5V
1
mA
ICC
VCC Active Current
f = 5MHz, IOUT = 0 mA, CE = VIL
40
mA
VIL
Input Low Voltage
-0.6
0.8
V
VIH
Input High Voltage
2.0
VCC + 0.5
V
VOL
Output Low Voltage
IOH = -2.1 mA
0.4
V
VOH
Output High Voltage
IOH = -400 µA
Notes:
2.4
V
1. VCC must be applied simultaneously or before VPP, and removed simultaneously or after VPP.
2. VPP may be connected directly to VCC except during programming. The supply current would then be the sum of ICC and IPP.
4
AT27BV800
AT27BV800
AC Characteristics for Read Operation
(VCC = 2.7V to 3.6V and 4.5V to 5.5V)
AT27BV800
-12
Symbol
Parameter
Condition
tACC(3)
Address to Output Delay
CE = OE = VIL
CE to Output Delay
tOE(2,3)
OE to Output Delay
tDF(4,5)
OE or CE High to Output Float, whichever
occured first
tOH(4)
Output Hold from Address CE or OE,
whichever occured first
tST
BYTE High to Output Valid
120
150
ns
tSTD
BYTE Low to Output Transition
50
60
ns
tCE
(2)
Notes:
Max
Units
120
150
ns
OE = VIL
120
150
ns
CE = VIL
40
50
ns
35
40
ns
2,3,4,5. See the AC Waveforms for Read Operation diagram.
Min
-15
Max
5.0
Min
5.0
ns
= Preliminary
Byte-Wide Read Mode AC Waveforms(1)
Note:
1.
BYTE/VPP = VIL
Word-Wide Read Mode AC Waveforms(1)
Note:
1.
BYTE/VPP = VIH
5
BYTE Transition AC Waveforms
A0 - A18
VALID
A-1
VALID
tOH
tACC
BYTE/VPP
tST
O0 - O7
DATA OUT
tOH
DATA OUT
HI-Z
O8 - O15
DATA OUT
tSTD
Notes:
1.
Timing measurement references are 0.8V and 2.0V. Input AC drive levels are 0.45V and 2.4V, unless otherwise specified.
2.
OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE.
3.
OE may be delayed up to tACC - tOE after the address is valid without impact on tACC.
4.
This parameter is only sampled and is not 100% tested.
5.
Output float is defined as the point when data is no longer driven.
Output Test Load
Input Test Waveforms and Measurement Levels
tR, tF < 20 ns (10% to 90%)
Note:
CL = 100 pF including jig
capacitance.
Pin Capaticance
(f = 1 MHz, T = 25°C)(1)
Typ
Max
Units
Conditions
CIN
4
10
pF
VIN = 0V
COUT
8
12
pF
VOUT = 0V
Note:
6
1. Typical values for nominal supply voltage. This parameter is only sampled and is not 100% tested.
AT27BV800
AT27BV800
Programming Waveforms(1)
Notes:
1.
The Input Timing reference is 0.8V for VIL and 2.0V for VIH.
2.
tOE and tDFP are characteristics of the device but must be accommodated by the programmer.
3.
When programming the AT27BV800, a 0.1 µF capacitor is required across VPP and ground to suppress voltage transients.
DC Programming Characteristics
TA = 25 ± 5°C, VCC = 6.5 ± 0.25V, VPP = 13.0 ± 0.25V
Limits
Symbol
Parameter
Test Conditions
ILI
Input Load Current
VIN = VIL, VIH
VIL
Input Low Level
VIH
Input High Level
VOL
Output Low Voltage
IOL = 2.1 mA
VOH
Output High Voltage
IOH = -400 µA
ICC2
VCC Supply Current (Program and Verify)
IPP2
VPP Supply Current
VID
A9 Product Identification Voltage
Min
Max
Units
±10
µA
-0.6
0.8
V
2.0
VCC + 0.5
V
0.4
V
2.4
CE = VIL
11.5
V
50
mA
30
mA
12.5
V
7
AC Programming Characteristics
TA = 25 ± 5°C, VCC = 6.5 ± 0.25V, VPP = 13.0 ± 0.25V
Limits
Test Conditions(1)
Symbol
Parameter
tAS
Address Setup Time
tOES
OE Setup Time
tDS
Data Setup Time
tAH
Address Hold Time
tDH
Data Hold Time
tDFP
OE High to Output Float Delay(2)
tVPS
VPP Setup Time
tVCS
VCC Setup Time
2
µs
2
µs
Input Pulse Levels:
0.45V to 2.4V
0
µs
2
µs
Input Pulse Levels:
0
Input Timing Reference Level:
0.8V to 2.0V
CE Program Pulse Width
tOE
Data Valid from OE
tPRT
BYTE /VPP Pulse Rise Time During
Programming
Units
µs
0.8V to 2.0V
(3)
Max
2
Input Rise and Fall Times:
(10% to 90%) 20 ns.
tPW
Notes:
Min
Output Timing Reference Level:
0.8V to 2.0V
130
ns
2
µs
2
µs
47.5
52.5
µs
150
ns
50
ns
1. Vcc must be applied simultaneously or before VPP and removed simultaneously or after VPP.
2. This parameter is only sampled and is not 100% tested. Output Float is defined as the point where data is no longer driven—
see timing diagram.
3. Program Pulse width tolerance is 50 µs ± 5%.
Atmel’s 27BV800 Integrated Product Identification Code(1)
Pins
A0
Codes
O14
O13
O12
O11
O10
O9
O8
O7
O6
O5
O4
O3
O2
O1
O0
Hex Data
Manufacturer
0
0
0
0
1
1
1
1
0
1E1E
Device Type
1
1
1
1
1
1
0
0
0
F8F8
Note:
8
O15
1. The AT27BV800 has the same Product Identification Code as the AT27C800. Both are programming compatible.
AT27BV800
AT27BV800
Rapid Programming Algorithm
A 50 µs CE pulse width is used to program. The address is
set to the first location. VCC is raised to 6.5V and BYTE/VPP
is raised to 13.0V. Each address is first programmed with
one 50 µs CE pulse without verification. Then a verification/reprogramming loop is executed for each address. In
the event a word fails to pass verification, up to 10 successive 50 µs pulses are applied with a verification after each
pulse. If the word fails to verify after 10 pulses have been
applied, the part is considered failed. After the word verifies
properly, the next address is selected until all have been
checked. VPP is then lowered to 5.0V and VCC to 5.0V. All
words are read again and compared with the original data
to determine if the device passes or fails.
9
Ordering Information
ICC (mA)
tACC
(ns)
Active
Standby
120
10
150
Ordering Code
Package
Operation Range
0.02
AT27BV800-12JC
AT27BV800-12RC
AT27BV800-12TC
44J
44R
48T
Commercial
(0°C to 70°C)
10
0.02
AT27BV800-12JI
AT27BV800-12RI
AT27BV800-12TI
44J
44R
48T
Industrial
(-40°C to 85°C)
10
0.02
AT27BV800-15JC
AT27BV800-15RC
AT27BV800-15TC
44J
44R
48T
Commercial
(0°C to 70°C)
10
0.02
AT27BV800-15JI
AT27BV800-15RI
AT27BV800-15TI
44J
44R
48T
Industrial
(-40°C to 85°C)
= Preliminary
Package Type
44J
44-Lead, Plastic J-Leaded Chip Carrier (PLCC)
44R
44-Lead, 0.525" Wide, Plastic Gull Wing Small Outline Package (SOIC/SOP)
48T
48-Lead, Plastic Thin Small Outline Package (TSOP) 12 x 20 mm
10
AT27BV800
AT27BV800
Packaging Information
44R, 44-Lead, 0.525" Wide,
Plastic Gull Wing Small Outline Package (SOIC/SOP)
Dimensions in Inches and (Millimeters)
48T, 48-Lead, 12 x 20 mm,
Plastic Thin Small Outline Package(TSOP)
Dimensions in Millimeters and (Inches)*
JEDEC OUTLINE MO-142 BD
*Controlling dimension: millimeters
44J, 44-Lead, Plastic J-Leaded Chip Carrier (PLCC)
Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-018 AC
.045(1.14) X 45°
PIN NO. 1
IDENTIFY
.045(1.14) X 30° - 45°
.012(.305)
.008(.203)
.630(16.0)
.590(15.0)
.656(16.7)
SQ
.650(16.5)
.032(.813)
.026(.660)
.695(17.7)
SQ
.685(17.4)
.050(1.27) TYP
.500(12.7) REF SQ
.021(.533)
.013(.330)
.043(1.09)
.020(.508)
.120(3.05)
.090(2.29)
.180(4.57)
.165(4.19)
.022(.559) X 45° MAX (3X)
11
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