ON NTMFS5C468NLT3G Single nâ channel power mosfet Datasheet

NTMFS5C468NL
Power MOSFET
40 V, 10.3 mW, 37 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
37
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Steady
State
PD
Pulsed Drain Current
TA = 25°C, tp = 10 ms
G (4)
PD
S (1,2,3)
W
3.5
190
A
−55 to
+175
°C
IS
31
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 2 A)
EAS
95
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
5.3
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
43
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
5C468L
AYWZZ
D
D
5C468L = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
November, 2015 − Rev. 2
MARKING
DIAGRAM
D
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2015
N−CHANNEL MOSFET
1.7
IDM
Parameter
D (5)
A
13
TJ, Tstg
Source Current (Body Diode)
37 A
17.6 mW @ 4.5 V
9.2
TA = 100°C
Operating Junction and Storage Temperature
10.3 mW @ 10 V
40 V
W
28
14
ID
TA = 100°C
TA = 25°C
ID MAX
26
TC = 100°C
TA = 25°C
RDS(ON) MAX
1
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Publication Order Number:
NTMFS5C468NL/D
NTMFS5C468NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
24
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
100
nA
2.0
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
−4.8
mV/°C
VGS = 10 V
ID = 20 A
8.6
10.3
VGS = 4.5 V
ID = 20 A
14.5
17.6
gFS
VDS = 15 V, ID = 20 A
33
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
570
VGS = 0 V, f = 1 MHz, VDS = 20 V
230
VGS = 10 V, VDS = 20 V; ID = 20 A
7.3
CRSS
pF
11
Total Gate Charge
QG(TOT)
Total Gate Charge
QG(TOT)
3.4
Threshold Gate Charge
QG(TH)
0.9
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
1.0
Plateau Voltage
VGP
3.4
td(ON)
7
VGS = 4.5 V, VDS = 20 V; ID = 20 A
nC
1.6
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 20 V,
ID = 20 A, RG = 1.0 W
tf
43
ns
11
2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.88
TJ = 125°C
0.79
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 20 A
1.2
V
18
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
QRR
9
ns
9
100
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5C468NL
TYPICAL CHARACTERISTICS
35
35
10 V to 4.0 V
30
ID, DRAIN CURRENT (A)
30
ID, DRAIN CURRENT (A)
VDS = 10 V
3.6 V
25
20
3.2 V
15
10
2.8 V
25
20
15
TJ = 25°C
10
5
5
0
0
TJ = 125°C
0.4
0.8
1.2
1.6
2.0
2.4
2.8
0
3
5
4
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 20 A
45
40
35
30
25
20
15
10
5
0
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
20
TJ = 25°C
18
16
VGS = 4.5 V
14
12
10
VGS = 10 V
8
6
4
2
0
10
20
30
40
60
50
70
80
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.E+05
1.9
VGS = 10 V
ID = 20 A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
0
IDSS, LEAKAGE (A)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
TJ = −55°C
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
50
3
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
TJ = 175°C
1.E+04
1.E+03
TJ = 125°C
1.E+02
TJ = 85°C
1.E+01
25
50
75
100
125
150
175
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NTMFS5C468NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.E+03
C, CAPACITANCE (pF)
CISS
COSS
1.E+02
1.E+01
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
1.E+00
0
5
10
20
15
30
25
40
35
7
6
5
QGS
4
QGD
3
VDS = 20 V
ID = 20 A
TJ = 25°C
2
1
0
1
0
2
3
4
5
7
6
8
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
tr
VGS = 0 V
IS, SOURCE CURRENT (A)
td(off)
t, TIME (ns)
8
QG, TOTAL GATE CHARGE (nC)
tf
10
td(on)
VGS = 4.5 V
VDS = 20 V
ID = 20 A
1
10
10
TJ = 25°C
1
0.1
0.01
0.001
100
TJ = 125°C
0.2
0
TJ = −55°C
0.4
0.6
0.8
1.0
1.2
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
1 ms
500 ms
100
10
10 ms
10
IPEAK, (A)
ID, DRAIN CURRENT (A)
QT
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
1
10
TC = 25°C
VGS ≤ 10 V
Single Pulse
1
0.1
0.1
1
TJ (initial) = 100°C
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
TJ (initial) = 25°C
10
1E−4
100
1E−3
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−2
NTMFS5C468NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
RqJA (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5C468NLT1G
5C468L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5C468NLT3G
5C468L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5C468NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE L
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
q
E
2
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
0.10 C
3X
C
e
SEATING
PLANE
DETAIL A
A
RECOMMENDED
SOLDERING FOOTPRINT*
0.10 C
SIDE VIEW
8X
C A B
0.05
c
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
2X
DETAIL A
0.495
4.560
2X
b
0.10
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.30
5.15
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.61
0.71
1.20
1.35
1.50
0.51
0.61
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
1.530
e/2
L
1
4
3.200
4.530
K
E2
PIN 5
(EXPOSED PAD)
L1
M
1.330
2X
0.905
1
0.965
G
D2
BOTTOM VIEW
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
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For additional information, please contact your local
Sales Representative
NTMFS5C468NL/D