ON NTLUS4C16N Single n-channel power mosfet Datasheet

NTLUS4C16N
Power MOSFET
30 V, 11.7 A, Single N−Channel,
1.6x1.6x0.55 mm mCoolt UDFN6 Package
Features
• UDFN Package with Exposed Drain Pads for Excellent Thermal
•
•
•
Conduction
Low Profile UDFN 1.6 x 1.6 x 0.55 mm for Board Space Saving
Ultra Low RDS(on)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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MOSFET
RDS(on) MAX
V(BR)DSS
11.4 mW @ 10 V
13.3 mW @ 4.5 V
14.2 mW @ 3.7 V
30 V
• Power Load Switch
• Wireless Charging
• DC−DC Converters
ID MAX
11.7 A
15.2 mW @ 3.3 V
20 mW @ 2.5 V
40 mW @ 1.8 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGS
±12
V
ID
9.4
A
Continuous Drain
Current (Note 1)
Power Dissipation (Note 1)
Continuous Drain
Current (Note 2)
Steady
State
TA = 25°C
TA = 85°C
6.8
t≤5s
TA = 25°C
11.7
Steady
State
TA = 25°C
PD
G
S
N−CHANNEL MOSFET
W
1.53
S
t≤5s
TA = 25°C
Steady
State
TA = 25°C
2.37
ID
TA = 85°C
MARKING DIAGRAM
D
A
6.1
Pin 1
4.4
1
UDFN6
(mCOOL])
CASE 517AU
AHMG
G
AH = Specific Device Code
M = Date Code
G = Pb−Free Package
Power Dissipation (Note 2)
TA = 25°C
PD
0.65
W
Pulsed Drain Current
tp = 10 ms
IDM
28
A
TJ,
TSTG
-55 to
150
°C
(Note: Microdot may be in either location)
Source Current (Body Diode) (Note 1)
IS
2.0
A
PIN CONNECTIONS
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
MOSFET Operating Junction and Storage
Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size,
2 oz. Cu.
D
1
D
2
G
3
6
D
5
D
4
S
D
S
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 0
1
Publication Order Number:
NTLUS4C16N/D
NTLUS4C16N
THERMAL RESISTANCE RATINGS
Symbol
Max
Junction-to-Ambient – Steady State (Note 3)
RθJA
81.7
Junction-to-Ambient – t ≤ 5 s (Note 3)
RθJA
52.8
Junction-to-Ambient – Steady State min Pad (Note 4)
RθJA
193.6
Parameter
Unit
°C/W
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
30
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = 250 mA, ref to 25°C
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
IDSS
VGS = 0 V,
VDS = 24 V
V
11
mV/°C
TJ = 25°C
1
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±12 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
Forward Transconductance
VGS(TH)/TJ
RDS(on)
gFS
0.6
1.1
3
V
mV/°C
mW
VGS = 10 V, ID = 8.0 A
9.3
11.4
VGS = 4.5 V, ID = 5.0 A
10.7
13.3
VGS = 3.7 V, ID = 3.0 A
11.4
14.2
VGS = 3.3 V, ID = 3.0 A
12.0
15.2
VGS = 2.5 V, ID = 2.5 A
14.3
20
VGS = 1.8 V, ID = 2.5 A
26
40
VDS = 1.5 V, ID = 5.0 A
31
S
690
pF
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz,
VDS = 15 V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
26
Total Gate Charge
QG(TOT)
7.5
Threshold Gate Charge
QG(TH)
0.6
Gate-to-Source Charge
QGS
Gate-to-Drain Charge
QGD
VGS = 4.5 V, VDS = 15 V;
ID = 5.0 A
305
nC
1.3
1.4
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6)
Turn-On Delay Time
td(ON)
Rise Time
Turn-Off Delay Time
tr
td(OFF)
Fall Time
ns
6.0
VGS = 4.5 V, VDD = 15 V,
ID = 5.0 A, RG = 1 W
tf
14.5
17.5
2.5
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 2.0 A
TJ = 25°C
0.7
TJ = 125°C
0.5
1.0
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTLUS4C16N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
21
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 2.0 A
QRR
ns
11
10
10.5
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
DEVICE ORDERING INFORMATION
Package
Shipping†
NTLUS4C16NTAG
UDFN6
(Pb−Free)
3000 / Tape & Reel
NTLUS4C16NTBG
UDFN6
(Pb−Free)
3000 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTLUS4C16N
TYPICAL CHARACTERISTICS
25
25
VDS = 5 V
20
10 V to
2.0 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 1.8 V
1.6 V
15
1.4 V
10
5
1.2 V
0
1
2
3
4
10
5
0
0
0.4
0.8
1.2
1.6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2
30
26
24
22
20
18
16
14
12
10
28
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (mW)
TJ = 25°C
ID = 8 A
28
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (mW)
TJ = 25°C
5
30
8
TJ = 25°C
VGS = 1.8 V
26
24
22
20
18
VGS = 2.5 V
VGS = 3.7 V
16
14
VGS = 3.3 V
12
VGS = 4.5 V
VGS = 10 V
10
8
1
2
3
4
5
6
7
8
9
0
10
4
6
8
10
12
14
16
18 20 22
24
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100000
VGS = 10 V
ID = 8 A
TJ = 150°C
10000
IDSS, LEAKAGE (nA)
1.4
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
1.6
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (Normalized)
TJ = 125°C
15
TJ = −55°C
TJ = 25°C
0
20
1.2
1.0
0.8
0.6
−50
TJ = 125°C
1000
TJ = 85°C
100
VGS = 0 V
10
−25
0
25
50
75
100
125
150
5
10
15
20
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
25
NTLUS4C16N
TYPICAL CHARACTERISTICS
Coss
100
Crss
TJ = 25°C
VGS = 0 V
f = 1 MHz
0
5
10
15
20
25
30
QT
7
25
6
20
5
4
15
3
Qgs
Qgd
10
2
TJ = 25°C
VDS = 15 V
ID = 5 A
1
0
0
30
1
2
3
4
5
6
7
8
9
10
11
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
5
0
12
2.0
1000.0
VDD = 15 V
ID = 15 A
VGS = 4.5 V
IS, SOURCE CURRENT (A)
1.8
td(off)
100.0
t, TIME (ns)
VDS, DRAIN−TO−SOURCE VOLTAGE
(V)
C, CAPACITANCE (pF)
Ciss
10
8
VGS, GATE−TO−SOURCE VOLTAGE (V)
1000
tf
tr
td(on)
10.0
VGS = 0 V
1.6
1.4
TJ = 25°C
1.2
1.0
0.8
TJ = 125°C
0.6
0.4
0.2
1.0
0.0
1
10
0.0
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
100 ms
1
VGS < 10 V
TA = 25°C
Single Pulse Response
0.1
RDS(on) Limit
Thermal Limit
Package Limit
0.01
1.60
10 ms
10
0.1
1 ms
10 ms
ID = 250 mA
1.40
VGS(th), (V)
ID, DRAIN CURRENT (A)
1.80
1.20
1.00
0.80
0.60
0.40
dc
0.20
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
0.00
−50
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
−25
0
25
50
75
100
TJ, TEMPERATURE (°C)
125
Figure 12. VGS(th) vs. Temperature
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5
150
175
NTLUS4C16N
TYPICAL CHARACTERISTICS
400
350
POWER (W)
300
250
200
150
100
50
0
1.E−04 1.E−03 1.E−02 1.E−01 1.E+00 1.E+01 1.E+02 1.E+03
SINGLE PULSE TIME (°C)
RqJA, EFFECTIVE TRANSIENT THERMAL RESPONSE
(°C/W)
Figure 13. Single Pulse Maximum Power Dissipation
1000
50% Duty Cycle
20%
10%
10 5%
2%
100
1 1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
Figure 14. Thermal Response
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6
1
10
100
1000
NTLUS4C16N
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AU
ISSUE O
A
B
D
2X
0.10 C
ÉÉÉ
ÉÉÉ
PIN ONE
REFERENCE
2X
L1
L
E
DETAIL A
OPTIONAL
CONSTRUCTION
0.10 C
A
DETAIL B
(A3)
0.05 C
A1
0.05 C
0.10 C A B
A3
DETAIL B
C
SEATING
PLANE
D2
3
1
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.20
0.30
1.60 BSC
1.60 BSC
0.50 BSC
0.62
0.72
0.15
0.25
0.57
0.67
0.55 BSC
0.25 BSC
0.20
0.30
−−−
0.15
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
e
F
6X
ÉÉÉ
ÉÉÉ
OPTIONAL
CONSTRUCTION
A1
SIDE VIEW
DIM
A
A1
A3
b
D
E
e
D1
D2
E2
F
G
L
L1
MOLD CMPD
EXPOSED Cu
TOP VIEW
NOTE 4
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
0.82
E2
G
L
0.16
0.43
0.10 C A B
0.68
2X
6
DETAIL A
4
D1
BOTTOM VIEW
6X
0.35
b
0.10 C A B
0.05 C
1.90
NOTE 3
0.28
1
6X
0.50 PITCH
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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For additional information, please contact your local
Sales Representative
NTLUS4C15N/D