M20HxxCT, MB20HxxCT, MF20HxxCT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES 2 M20H90CT M20H100CT 3 1 1 PIN 1 PIN 2 PIN 3 CASE 2 MF20H90CT MF20H100CT PIN 1 PIN 2 Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current High forward surge capability High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) PIN 3 TO-263AB K • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3_A • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 2 1 TYPICAL APPLICATIONS MB20H90CT MB20H100CT For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters and polarity protection application. K PIN 1 PIN 2 3 • • • • • • • HEATSINK MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM 90 V to 100 V IFSM 250 A IR 4.5 μA VF 0.64 Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,.....) Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 HE3 suffix meets JESD 201 class 2 whisker test TJ max. 175 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Dual common cathode per Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) SYMBOL M20H90CT M20H100CT Maximum repetitive peak reverse voltage VRRM 90 100 Working peak reverse voltage VRWM 90 100 Maximum DC blocking voltage VDC 90 100 PARAMETER Maximum average forward rectified current total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IF(AV) IFSM UNIT V 20 10 250 A Peak repetitive reverse current per diode at tp = 2.0 µs, 1 kHz IRRM 1.0 Voltage rate of change (rated VR) dV/dt 10 000 V/μs TJ. TSTG -65 to +175 °C VAC 1500 V Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Revision: 16-Mar-16 Document Number: 87736 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 M20HxxCT, MB20HxxCT, MF20HxxCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode Maximum reverse current at working peak reverse voltage per diode VF (1) IR (2) TEST CONDITIONS VALUE IF = 10 A TC = 25 °C 0.77 IF = 10 A TC = 125 °C 0.64 IF = 20 A TC = 25 °C 0.88 IF = 20 A TC = 125 °C 0.73 Rated VR UNIT V TJ = 25 °C 4.5 μA TJ = 125 °C 6.0 mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL M MB MF UNIT RJC 2.0 2.0 5.8 °C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AB M20H100CTHE3_A/P (1) 1.85 P 50/tube Tube ITO-220AB MF20H100CTHE3_A/P (1) 1.99 P 50/tube Tube TO-263AB MB20H100CTHE3_A/P (1) 1.35 P 50/tube Tube TO-263AB MB20H100CTHE3_A/I (1) 1.35 I 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 16-Mar-16 Document Number: 87736 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 M20HxxCT, MB20HxxCT, MF20HxxCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 000 20 Instantaneous Reverse Current (µA) Average Forward Current (A) Resistive or Inductive Load 16 M, MB 12 8 4 MF TJ = 125 °C 100 TJ = 100 °C 10 1 0.1 TJ = 25 °C 0.01 0 0 50 100 150 20 180 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 300 10 000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 250 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 150 °C 1000 200 150 100 50 0 10 1 1000 100 10 100 0.1 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 175 °C 10 TJ = 125 °C TJ = 150 °C TJ = 100 °C 1 TJ = 25 °C 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 10 1 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 16-Mar-16 Document Number: 87736 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 M20HxxCT, MB20HxxCT, MF20HxxCT www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 3 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) K 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) TO-263AB 0.245 (6.22) MIN. 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.022 (0.56) 0.014 (0.36) 0.190 (4.83) 0.160 (4.06) 3 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.411 (10.45) 0.380 (9.65) 7° REF. 7° REF. 0.560 (14.22) 0.530 (13.46) 0.205 (5.20) 0.195 (4.95) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.625 (15.87) 0.160 (4.06) 0.140 (3.56) 0.105 (2.67) 0.095 (2.41) 0.076 (1.93) REF. 45° REF. 0.600 (15.24) 0.580 (14.73) 0.145 (3.68) 0.135 (3.43) 7° REF. 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 16-Mar-16 Document Number: 87736 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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