NTMFS4H02N Power MOSFET 25 V, 193 A, Single N−Channel, SO−8FL Features • • • • Optimized Design to Minimize Conduction and Switching Losses Optimized Package to Minimize Parasitic Inductances Optimized material for improved thermal performance These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • • • • High Performance DC-DC Converters System Voltage Rails Netcom, Telecom Servers & Point of Load Value Units Drain-to-Source Voltage VDSS 25 V Gate-to-Source Voltage VGS ±20 V Continuous Drain Current RqJA (TA = 25°C, Note 1) ID 37 A Power Dissipation RqJA (TA = 25°C, Note 1) PD 3.13 W Continuous Drain Current RqJC (TC = 25°C, Note 1) ID 193 A Power Dissipation RqJC (TC = 25°C, Note 1) PD 83 W Pulsed Drain Current (tp = 10 ms) IDM 412 A Single Pulse Drain-to-Source Avalanche Energy (Note 1) (IL = 47 Apk, L = 0.3 mH) EAS 331 mJ Drain to Source dV/dt dV/dt 7 V/ns TJ(max) 150 °C TSTG −55 to 150 °C Storage Temperature Range Lead Temperature Soldering Reflow (SMD Styles Only), Pb-Free Versions (Note 2) MAX RDS(on) TYP QGTOT 4.5 V 2.2 mW 18 nC 10 V 1.4 mW 38.5 nC SO8−FL (5 x 6 mm) Symbol Maximum Junction Temperature VGS PIN CONNECTIONS MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter http://onsemi.com (Top View) TSLD (Bottom View) N−CHANNEL MOSFET D (5−8) G (4) S (1,2,3) ORDERING INFORMATION °C 260 See detailed ordering and shipping information on page 7 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Values based on copper area of 645 mm2 (or 1 in2) of 2 oz copper thickness and FR4 PCB substrate. 2. For more information, please refer to our Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3. This is the absolute maximum rating. Parts are 100% UIS tested at TJ = 25°C, VGS = 10 V, IL = 31 A, EAS = 144 mJ. THERMALCHARACTERISTICS Parameter Thermal Resistance, Junction-to-Ambient (Note 1 and 4) Junction-to-Case (Note 1 and 4) Symbol Max RqJA RqJC 40.0 1.5 Units °C/W 4. Thermal Resistance RqJA and RqJC as defined in JESD51−3. © Semiconductor Components Industries, LLC, 2014 May, 2014 − Rev. 3 1 Publication Order Number: NTMFS4H02N/D NTMFS4H02N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 18.5 VGS = 0 V, VDS = 20 V mV/°C TJ = 25°C 1 TJ = 125°C 20 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA 100 mA nA ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.1 3.7 VGS = 10 V ID = 30 A 1.1 1.4 VGS = 4.5 V ID = 30 A 1.7 2.2 gFS VDS = 12 V, ID = 15 A V mV/°C 84 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2651 VGS = 0 V, f = 1 MHz, VDS = 12 V 103 Total Gate Charge QG(TOT) 18 Threshold Gate Charge QG(TH) 2.7 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge Gate Resistance pF 1814 VGS = 4.5 V, VDS = 12 V; ID = 30 A nC 7.2 4.2 QG(TOT) VGS = 10 V, VDS = 12 V; ID = 30 A 38.5 RG TA = 25°C 1.0 nC 2 W SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 13.1 VGS = 4.5 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 20 ns 22.2 9.1 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 9.5 VGS = 10 V, VDD = 12 V, ID = 15 A, RG = 3.0 W tf 18.5 ns 30.3 5 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.75 TJ = 125°C 0.56 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 1.1 V 46.3 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 23.9 ns 22.4 51 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTMFS4H02N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit PACKAGE PARASITIC VALUES Source Inductance LS Drain Inductance LD Gate Inductance LG TA = 25°C 0.57 nH 0.13 nH 1.37 nH Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTMFS4H02N TYPICAL CHARACTERISTICS VGS = 10 V to 3.7 V 140 VGS = 3.5 V TJ = 25°C 120 VGS = 3.3 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 140 100 VGS = 3.1 V 80 VGS = 2.9 V 60 40 VGS = 2.7 V 20 100 80 TJ = 125°C 60 40 TJ = 25°C 20 VGS = 2.5 V TJ = −55°C 0 0 0.5 1.0 1.5 2.0 2.5 0 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 0.0030 4.0 0.0020 0.0019 VGS = 30 V T = 25°C 0.0018 0.0025 VGS = 4.5 V 0.0017 0.0016 0.0020 0.0015 0.0014 0.0013 0.0015 0.0012 VGS = 10 V 0.0011 0.0010 3 4 5 6 7 8 9 0.0010 10 1.5 40 50 60 70 80 90 100 110 120 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1E−04 ID = 30 A VGS = 10 V VGS = 0 V TJ = 150°C 1E−05 1.4 TJ = 125°C 1E−06 1.3 1.2 TJ = 85°C 1E−07 1.1 1.0 TJ = 25°C 1E−08 0.9 0.8 0.7 −50 30 IDSS, LEAKAGE (A) 1.6 20 VGS (V) 1.7 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS = 5 V 120 1E−09 −25 0 25 50 75 100 125 150 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 25 NTMFS4H02N 4800 4400 4000 3600 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) TYPICAL CHARACTERISTICS TJ = 25°C VGS = 0 V 3200 Ciss 2800 2400 2000 1600 Coss 1200 800 400 0 Crss 0 5 10 15 20 6 Qgs 4 Qgd TJ = 25°C VGS = 10 V VDD = 12.0 V ID = 30 A 2 0 0 4 8 12 16 20 24 32 28 36 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 40 30 VDD = 12 V ID = 15 A VGS = 10 V VGS = 0 V td(off) IS, SOURCE CURRENT (A) t, TIME (ns) QT 8 25 1000 tf 100 tr td(on) 10 25 20 TJ = 125°C TJ = 25°C 15 10 5 0 1 1 10 0.4 100 0.5 0.6 0.7 0.8 0.9 1.0 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ms 100 1 ms 10 10 ms 0 V < VGS < 10 V 1 RDS(on) Limit Thermal Limit Package Limit 0.1 0.01 0.01 0.1 1 dc 10 EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) 10 100 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 ID = 31 A 25 50 75 100 125 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 150 NTMFS4H02N TYPICAL CHARACTERISTICS 100 50% Duty Cycle 20% R(t) (°C/W) 10 10% 5% 2% 1 1% PCB Cu Area 650 mm2 PCB Cu thk 1 oz Single Pulse 0.1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 1E−05 1E−04 1E−03 PULSE TIME (sec) Figure 13. Thermal Characteristics 1E+03 220 200 ID, DRAIN CURRENT (A) 180 160 1E+02 GFS (S) 140 120 100 80 1E+01 60 40 20 0 1E+00 0 20 40 60 80 100 120 140 1E−07 1E−06 ID (A) PULSE WIDTH (sec) Figure 14. GFS vs. ID Figure 15. Avalanche Characteristics http://onsemi.com 6 NTMFS4H02N ORDERING INFORMATION Package Shipping† NTMFS4H02NT1G SO8−FL (Pb-Free) 1500 / Tape & Reel NTMFS4H02NT3G SO8−FL (Pb-Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MARKING DIAGRAM D S S S G 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ D 4H02N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability http://onsemi.com 7 NTMFS4H02N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE H 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 q E 2 c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 0.10 C SIDE VIEW DETAIL A SOLDERING FOOTPRINT* 8X b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X e/2 L 1 1.000 4 K 0.965 1.330 E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.905 2X 0.495 4.530 3.200 G MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ 0.475 D2 BOTTOM VIEW 2X 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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