Renesas NP90N06VDK N-channel power mos fet Datasheet

Data Sheet
NP90N06VDK
R07DS1297EJ0100
Rev.1.00
Oct 26, 2015
60 V – 90 A – N-channel Power MOS FET
Application: Automotive
Description
NP90N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance
⎯ RDS(on)1 = 5.3 mΩ MAX. (VGS = 10 V, ID = 45 A)
• Low Ciss: Ciss = 4000 pF TYP. (VDS = 25 V)
• Designed for automotive application and AEC-Q101 qualified
Outline
Drain
Body
Diode
Gate
Source
TO-252(MP-3ZP)
Equivalent circuit
Remark: Strong electric field, when exposed to this device, can cause destruction of the gate oxide and
ultimately degrade the device operation. Steps must be taken to stop generation of static electricity
as much as possible, and quickly dissipate it once, when it has occurred.
Ordering Information
Part No.
NP90N06VDK-E1-AY *1
NP90N06VDK-E2-AY *1
Note:
Lead Plating
Pure Sn (Tin)
Packing
Taping (E1 type)
Tape 2500 p/reel
Taping (E2 type)
Package
TO-252(MP-3ZP)
*1. Pb-free (This product does not contain Pb in the external electrode)
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
Page 1 of 7
NP90N06VDK
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation (TC = 25°C)
Total Power Dissipation (TA = 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current ∗2
Repetitive Avalanche Energy ∗2
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
Tch
Tstg
IAR
EAR
Ratings
60
±20
±90
±360
147
1.2
175
−55 to +175
33
108
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Notes: *1. TC = 25°C, PW ≤ 10 μs, Duty Cycle ≤ 1%
*2. RG = 25 Ω, VGS = 20 V → 0 V
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
Rth(ch-C)
Rth(ch-A)
1.02
125
°C/W
°C/W
Page 2 of 7
NP90N06VDK
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance ∗1
Symbol
IDSS
IGSS
VGS(th)
| yfs |
Drain to Source On-state
Resistance ∗1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage ∗1
Reverse Recovery Time
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Reverse Recovery Charge
Qrr
Note:
Min
Typ
1.5
40
2.1
80
3.8
4.9
4000
360
110
24
7
60
6
63
15
12
0.9
40
Max
1
±100
2.5
Unit
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
5.3
8.2
6000
540
200
60
20
120
20
95
1.5
45
nC
Test Conditions
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 45 A
VGS = 10 V, ID = 45 A
VGS = 4.5 V, ID = 23 A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 30 V, ID = 45 A,
VGS = 10 V,
RG = 0 Ω
VDD = 48 V,
VGS = 10 V,
ID = 90 A
IF = 90 A, VGS = 0 V
IF = 90 A, VGS = 0 V,
di/dt = 100 A/μs
*1. Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
50 Ω
RL
Wave Form
RG
PG.
VDD
VGS
VGS
VDD
0
VGS
10%
90%
VDS
90%
ID
IAS
90%
VDS
VGS
0
BVDSS
VDS
10%
0
10%
Wave Form
VDS
VDD
Starting Tch
τ
τ = 1 μs
Duty Cycle ≤ 1%
td(on)
tr
ton
td(off)
tf
toff
TEST CIRCUIT 3 GATE CHARGE
PG.
D.U.T.
IG = 2 mA
RL
50 Ω
VDD
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
Page 3 of 7
NP90N06VDK
Typical Characteristics (TA = 25°C)
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
160
100
Pt – Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
80
60
40
20
120
80
40
0
0
50
100
150
0
200
0
TC - Case Temperature - °C
50
100
150
200
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
ID(pulse)=360A
ID - Drain Current - A
100
ID(DC)=90A
10
1
Power Dissipation Limited
0.1
TC=25℃
Single Pulse
0.01
0.1
1
10
100
VDS - Drain to Source Voltage – V
Rth(t) - Transient Thermal Resistance - °C/W
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
Rth(ch-A) = 125°C/W
100
10
Rth(ch-C) = 1.02°C/W
1
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
Page 4 of 7
NP90N06VDK
DRAIN CURRENT vs.
FORWARD TRANSFER CHARACTERISTICS
DRAIN TO SOURCE VOLTAGE
400
100
10
300
TA=175°C
75°C
25°C
-55°C
ID - Drain Current - A
ID - Drain Current - A
VGS=10V
200
VGS=4.5V
100
1
0.1
0.01
VDS = 10V
Pulsed
Pulsed
0
0.001
0
0.5
1
1.5
2
2.5
3
3.5
0
VDS - Drain to Source Voltage - V
3
4
GATE TO SOURCE THRESHOLD VOLTAGE vs.
FORWARD TRANSFER ADMITTANCE vs.
CHANNEL TEMPERATURE
CURRENT
DRAIN
1000
2
1
VDS = VGS
ID=250μA
0
-100
-50
0
50
100
150
200
| yfs | - Forward Transfer Admittance - S
VGS(th) – Gate to Source Threshold Voltage - V
2
VGS - Gate to Source Voltage - V
3
TA=175°C
150°C
75°C
25°C
-55°C
100
10
VDS = 5V
Pulsed
1
0.1
Tch - Channel Temperature - °C
VGS=10V
4.5V
6
4
2
Pulsed
0
10
ID - Drain Current - A
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
10
1
100
GATE TO SOURCE VOLTAGE
12
0.1
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
8
1
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
RDS(on) - Drain to Source On-state Resistance - mΩ
1
12
Pulsed
10
8
6
4
2
ID=45A
0
0
5
10
15
20
VGS - Gate to Source Voltage - V
Page 5 of 7
NP90N06VDK
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
12
Pulsed
4
VGS=10V
ID=45A
2
100
Crss
VGS = 0V
f = 1.0MHz
10
-50
0
50
100
150
0.01
200
1
10
100
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
DYNAMIC INPUT CHARACTERISTICS
50
1000
VDD = 30V
VGS=10V
RG=0Ω
100
VDS - Drain to Source Voltage - V
td(on),tr,td(off),tr – Switching Time - ns
0.1
td(off)
td(on)
10
tr
tf
10
VDD= 48V
30V
12V
40
8
30
6
VGS
20
4
10
2
VDS
ID=90A
0
1
0.1
1
10
0
0
100
VGS - Gate to Source Voltage - V
0
-100
Coss
f Ad i
6
1000
T
VGS=4.5V
ID=23A
8
S
Ciss
10
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
CHANNEL TEMPERATURE
10
20
30
40
50
60
70
QG - Gate Charge - nC
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
100
trr – Reverse Recovery Time - ns
IF - Diode Forward Current - A
1000
VGS=10V
100
4.5V
0V
10
1
Pulsed
0.1
0
0.2
0.4
0.6
0.8
1
VF(S-D) - Source to Drain Voltage - V
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
1.2
10
di/dt = 100A/μs
VGS = 0V
1
0.1
1
10
100
IF - Drain Current - A
Page 6 of 7
NP90N06VDK
Package Drawings (Unit: mm)
TO-252 (MP-3ZP) (Mass: 0.3 g TYP.)
Renesas package code: PRSS0004ZP-A
2.3±0.1
1.0 TYP.
6.5±0.2
5.1 TYP.
4.3 MIN.
0.5±0.1
No Plating
2
3
0.8
1
1.14 MAX.
0.51 MIN.
1.13
6.1±0.2
10.4 MAX. (9.8 TYP.)
4.0 MIN.
4
No Plating
2.3
1. Gate
2. Drain
3. Source
4. Fin (Drain)
R07DS1297EJ0100 Rev.1.00
Oct 26, 2015
0 to 0.25
0.5±0.1
0.76±0.12
2.3
1.0
Page 7 of 7
Revision History
NP90N06VDK Data Sheet
Description
Rev.
1.00
Date
Oct. 26, 2015
Page
—
Summary
First Edition Issued
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