DMN10H099SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Features and Benefits RDS(ON) max ID max TA = +25°C 80mΩ @ VGS = 10V 4.2A 99mΩ @ VGS = 6.0V 3.6A V(BR)DSS 100V Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Power Management Functions DC-DC Converters Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.034 grams (approximate) POWERDI3333-8 S D D D Pin 1 S S G 1 8 2 7 3 6 4 5 Top View Internal Schematic D Top View Bottom View Ordering Information (Note 4) Part Number DMN10H099SFG-7 DMN10H099SFG-13 Notes: Compliance Standard Standard Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html Marking Information YYWW ADVANCE INFORMATION Product Summary N12 N12 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 13 = 2013) WW = Week code (01 ~ 53) POWERDI is a registered trademark of Diodes Incorporated DMN10H1099SFG Document number: DS36371 Rev. 2 - 2 1 of 6 www.diodes.com January 2014 © Diodes Incorporated DMN10H099SFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Continuous Drain Current (Note 6) VGS = 6V Steady State t<10s ID Value 100 ±20 4.2 3.3 ID 5.8 4.5 A ID 3.6 2.9 A A 5.2 4.1 20 ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Units V V IDM A A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C TA = +70°C Steady state t<10s TA = +25°C TA = +70°C Steady state t<10s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 0.98 0.57 131 76 2.31 1.18 55 28 6.9 -55 to +150 PD RJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 - - 1.0 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 80V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 2.0 54 58 13 0.77 3.0 80 99 - V Static Drain-Source On-Resistance 1.5 - VDS = VGS, ID = 250μA VGS = 10V, ID = 3.3A VGS = 6.0V, ID = 3.0A VDS = 10V, ID = 3.3A VGS = 0V, IS = 3.2A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1172 40.8 31.3 1.6 25.2 12.2 5.3 5.9 5.4 5.9 20.0 7.3 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 10V Total Gate Charge VGS = 4.5V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 50V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VDS = 50V, ID = 3.3A VGS = 10V, VDS = 50V, RG = 6.0Ω, ID = 3.3A 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated DMN10H1099SFG Document number: DS36371 Rev. 2 - 2 2 of 6 www.diodes.com January 2014 © Diodes Incorporated DMN10H099SFG 10 20.0 VDS = 10V 9 VGS = 10V ID, DRAIN CURRENT (A) 8 VGS = 6.0V 7 VGS = 5.0V 12.0 5 8.0 TA = 150°C 4 TA = 125°C 3 0.0 TA = 85°C VGS = 4.0V 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.08 VGS = 6.0V 0.06 VGS = 10V 0.04 0.02 0 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 5 0.1 0 T A = -55°C 1 VGS = 3.5V 0 TA = 25°C 2 1 2 3 4 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.5 0.4 ID = 3.3A 0.3 0.2 0.1 20 0.16 ID = 3.0A 0 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 3 VGS = 10V 0.14 T A = 150°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 6 VGS = 4.5V 4.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 16.0 0.12 T A = 125°C 0.10 TA = 85°C 0.08 0.06 TA = 25°C 0.04 TA = -55°C 0.02 0.00 0 1 2 3 4 5 6 7 8 9 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature 10 2.5 2 1.5 VGS = 10V ID = 5.0A VGS = 5V ID = 1.0A 1 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated DMN10H1099SFG Document number: DS36371 Rev. 2 - 2 3 of 6 www.diodes.com January 2014 © Diodes Incorporated VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2.5 0.15 2.2 0.12 VGS = 5V ID = 1.0A 0.09 ID = 1mA 1.9 VGS = 10V ID = 5A ID = 250µA 1.6 0.06 1.3 0.03 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature 10 1 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 CT, JUNCTION CAPACITANCE (pF) 9 IS, SOURCE CURRENT (A) 8 T A = 150°C 7 T A = 125°C 5 T A = 85°C 4 T A = -55°C 3 Ciss 1000 TA = 25°C 6 2 100 Coss Crss 1 0 0 10 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 100 VDS = 50V ID = 3.3A 8 6 4 5 10 15 20 25 30 35 40 45 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance PW = 100µs DC 1 0.01 0 5 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge 25 0.001 50 RDS(on) Limited PW = 10s PW = 1s PW = 100ms 0.1 2 0 f = 1MHz 0 10 -ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN10H099SFG PW = 20ms PW = 20ms PW = 10ms TJ(max) = 150°C TA = 25°C Single Pulse DUT on 1 * MRP Board 0.1 PW = 1ms 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 1000 POWERDI is a registered trademark of Diodes Incorporated DMN10H1099SFG Document number: DS36371 Rev. 2 - 2 4 of 6 www.diodes.com January 2014 © Diodes Incorporated DMN10H099SFG r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 72°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 L 0.35 0.45 0.40 L1 0.39 e 0.65 Z 0.515 All Dimensions in mm A3 A1 D D2 Pin 1 ID 1 L (4x) 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X Dimensions C G G1 Y Y1 Y2 Y3 X X2 G Y2 8 5 G1 Y1 Y 1 4 Y3 X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated DMN10H1099SFG Document number: DS36371 Rev. 2 - 2 5 of 6 www.diodes.com January 2014 © Diodes Incorporated DMN10H099SFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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