Spec. No. : C050Q8 Issued Date : 2017.02.24 Revised Date : Page No. : 1/9 CYStech Electronics Corp. P-Channel Enhancement Mode MOSFET MTB9D0P03Q8 BVDSS ID@VGS=-10V, TA=25°C ID@VGS=-10V, TA=70°C RDSON@VGS=-10V, ID=-12A RDSON@VGS=-4.5V,ID=-10A -30V -14.8A -11.8A 6.6mΩ(typ) 11mΩ(typ) Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit Outline MTB9D0P03Q8 D G：Gate S：Source D：Drain D SOP-8 D D G Pin 1 S S S Ordering Information Device Package Shipping MTB9D0P03Q8-0-T3-G SOP-8 (Pb-free lead plating and halogen-free package) 2500 pcs/ Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB9D0P03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050Q8 Issued Date : 2017.02.24 Revised Date : Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V, TA=25°C Continuous Drain Current @ VGS=-10V, TA=70°C Pulsed Drain Current (Note 2) Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=-16A, VDD=-25V TA=25 °C Total Power Dissipation (Note 1) TA=70 °C Symbol BVDSS VGS (Note 1) (Note 1) (Note 3) ID IDM IAS EAS PD Operating Junction and Storage Temperature Tj, Tstg Limits -30 ±20 -14.8 -11.8 -60 -34 128 3.1 2 Unit -55~+150 °C V A mJ W Note : 1.Surface mounted on FR-4 board, t≤10sec. 2.Pulse width ≤300μs, Duty Cycle≤2% 3.100% tested by conditions of VDD=-25V, VGS=-10V, L=0.1mH, IAS=-20A Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 20 40 (Note ) Unit °C/W Note : Surface mounted on 1 in² copper pad of FR-4 board, pulse width≤10s. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 VGS=0V, ID=-250μA V VGS(th) -1 -2.5 VDS=VGS, ID=-250μA IGSS ±100 nA VGS=±20V, VDS=0V -1 VDS=-24V, VGS=0V IDSS μA VDS=-24V, VGS=0V, Tj=55°C -5 6.6 9.0 VGS=-10V, ID=-12A *RDS(ON) mΩ 11 15.5 VGS=-4.5V, ID=-10A *GFS 14.7 S VDS=-10V, ID=-5A Dynamic Ciss 2177 pF VDS=-25V, VGS=0V, f=1MHz Coss 235 Crss 171 *td(ON) 14.6 *tr 22.6 VDD=-15V, ID=-12A, VGS=-10V, RG=1Ω ns *td(OFF) 72.6 *tf 16.4 MTB9D0P03Q8 CYStek Product Specification CYStech Electronics Corp. *Qg *Qgs *Qgd Source Drain Diode *VSD trr Qrr - Spec. No. : C050Q8 Issued Date : 2017.02.24 Revised Date : Page No. : 3/9 49.6 7.3 11.4 - nC VDS=-15V, VGS=-10V, ID=-12A -0.76 17 9 -1.2 - V ns nC VGS=0V, IS=-2.1A IF=-2.1A, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Recommended Soldering Footprint MTB9D0P03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050Q8 Issued Date : 2017.02.24 Revised Date : Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 -BVDSS, Normalized Drain-Source Breakdown Voltage -I D, Drain Current (A) 50 -10V, -6V, -5V,-4.5V, -4V 40 30 -3.5V 20 -3V 10 1.2 1.0 0.8 ID=-250μA, VGS=0V 0.6 VGS=-2.5V 0.4 0 0 1 -75 -50 -25 5 2 3 4 -VDS, Drain-Source Voltage(V) Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 100 1.2 -VSD , Source-Drain Voltage(V) RDS(on), Static Drain-Source On-State Resistance(mΩ) VGS=0V VGS=-4.5V 10 VGS=-10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 -ID, Drain Current(A) 10 0 100 R DS(on) , Normalized Static Drain-Source On-State Resistance 45 ID=-12A 35 30 25 20 15 10 5 0 0 MTB9D0P03Q8 2 4 6 8 -VGS, Gate-Source Voltage(V) 4 6 -IS , Source Drain Current(A) 8 10 2.4 50 40 2 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source On-State Resistance(mΩ) 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) 10 2.0 VGS=-10V, ID=-12A 1.6 1.2 0.8 0.4 RDS(ON) @Tj=25°C : 6.6mΩ typ. 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C050Q8 Issued Date : 2017.02.24 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.4 -VGS(th) , Threshold Voltage(V) Capacitance---(pF) 10000 Ciss 1000 C oss 1.2 1 ID=-1mA 0.8 0.6 ID=-250μA Crss 0.4 100 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 0 25 50 75 100 125 150 175 200 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current Gate Charge Characteristics 10 VDS=-15V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 100 10 1 VDS=-10V Pulsed TA=25°C 0.1 0.01 0.001 8 6 VDS=-20V 4 2 ID=-12A 0 0.01 0.1 1 -ID, Drain Current(A) 10 100 0 12 18 24 30 36 42 48 Qg, Total Gate Charge(nC) 54 60 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 18 RDS(ON) Limited 100μs 10 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=150°C, VGS=-10V RθJA=40°C/W, Single Pulse DC -I D, Maximum Drain Current(A) 100 -I D, Drain Current(A) 6 16 14 12 10 8 6 4 TA=25°C, Tj=150°C, VGS=-10V RθJA=40°C/W 2 0 0.01 0.01 MTB9D0P03Q8 0.1 1 10 -ID, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C050Q8 Issued Date : 2017.02.24 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 50 300 Single Pulse Power Rating, Junction to Ambient (Note on page 2) VDS=-10V 250 Power (W) -I D, Drain Current (A) 40 30 20 TJ(MAX) =150°C TA=25°C RθJA=40°C/W 200 150 100 10 50 0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 5 0 0.0001 0.001 0.01 0.1 1 Pulse Width(s) 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40 ° C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 MTB9D0P03Q8 1.E-03 1.E-02 1.E-01 1.E+00 t1, Square Wave Pulse Duration(s) 1.E+01 1.E+02 1.E+03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050Q8 Issued Date : 2017.02.24 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB9D0P03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C050Q8 Issued Date : 2017.02.24 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools. MTB9D0P03Q8 CYStek Product Specification Spec. No. : C050Q8 Issued Date : 2017.02.24 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Marking: Device Name B9D0 P03 Date Code Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB9D0P03Q8 CYStek Product Specification