CYStech Electronics Corp. Spec. No. : C590Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 1/8 Dual P-Channel Logic Level Enhancement Mode Power MOSFET MTBB5B10Q8 BVDSS -100V ID -2.5A RDSON(MAX) 250mΩ Description The MTBB5B10Q8 provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications. Features • RDS(ON)=250mΩ(max.)@VGS=-10V, ID=-1.5A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual P-ch MOSFET package • Pb-free lead plating & Halogen-free package Equivalent Circuit MTBB5B10Q8 Outline SOP-8 G：Gate S：Source D：Drain MTBB5B10Q8 CYStek Product Specification Spec. No. : C590Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 2/8 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, TC=25 °C Continuous Drain Current, TC=100 °C Pulsed Drain Current (Note 1) TA=25°C (Note 3) TA=100°C Operating Junction and Storage Temperature Range Power Dissipation Symbol Limits VDS VGS ID ID IDM -100 ±20 -2.5 -1.8 -10 2.4 1.3 -55~+175 PD Tj ; Tstg Unit V A W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 25 62.5 *3 Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad Unit °C/W °C/W Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit BVDSS VGS(th) GFS *1 IGSS -100 -1 -2.5 - -1.5 7 210 280 -3 ±100 -1 -25 250 375 V V S nA - 31 6.3 4.5 12 55 40 40 1066 365 55 - Test Conditions Static IDSS ID(ON) *1 *RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss MTBB5B10Q8 μA A mΩ VGS=0, ID=-250μA VDS = VGS, ID=-250μA VDS =-5V, ID=-1.5A VGS=±20 VDS =-80V, VGS =0 VDS =-70V, VGS =0, Tj=125°C VDS =-5V, VGS =-10V VGS =-10V, ID=-1.5A VGS =-5V, ID=-1A nC ID=-1.5A, VDS=-80V, VGS=-10V ns VDS=-50V, ID=-1A,VGS=-10V, RG=6Ω pF VGS=0V, VDS=-20V, f=1MHz CYStek Product Specification CYStech Electronics Corp. Source-Drain Diode IS *1 ISM *3 VSD *1 - - -2.5 -10 -1.3 Spec. No. : C590Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 3/8 A V IF= IS, VGS=0V Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTBB5B10Q8 MTBB5B10Q8 Package Shipping SOP-8 2500 pcs / Tape & Reel (Pb-free lead plating & Halogen-free package) Marking BB5B10 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C590Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 4/8 Typical Characteristics MTBB5B10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C590Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 5/8 Typical Characteristics(Cont.) MTBB5B10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C590Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 6/8 Reel Dimension Carrier Tape Dimension MTBB5B10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C590Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTBB5B10Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C590Q8 Issued Date : 2010.10.08 Revised Date : 2011.10.03 Page No. : 8/8 SOP-8 Dimension Right side View G Top View A Marking: I C B H Device Name Date Code J E D K Front View Part A Part A M L N 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 O F *: Typical Inches Min. Max. 0.1850 0.2007 0.1457 0.1614 0.2283 0.2441 0.0500* 0.0130 0.0201 0.1472 0.1527 0.0472 0.0638 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.70 5.10 3.70 4.10 5.80 6.20 1.27* 0.33 0.51 3.74 3.88 1.20 1.62 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0031 0.0110 0.0157 0.0323 0.0074 0.0102 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.08 0.28 0.40 0.83 0.19 0.26 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTBB5B10Q8 CYStek Product Specification