Diodes DMN10H220LVT-7 100v n-channel enhancement mode mosfet Datasheet

DMN10H220LVT
100V N-CHANNEL ENHANCEMENT MODE MOSFET
V(BR)DSS
Features and Benefits





ID
RDS(on) max
TA = +25°C
220mΩ @ VGS = 10V
2.24A
250mΩ @ VGS = 4.5V
2.10A
100V


This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Case: TSOT26
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.013 grams (Approximate)



Applications



Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Description
DC-DC Converters
Power Management Functions
Backlighting

TSOT26
D 1
6
D
D 2
5
D
G 3
4
S
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN10H220LVT-7
DMN10H220LVT-13
Notes:
Case
TSOT26
TSOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
220
Date Code Key
Year
Code
Month
Code
2015
C
Jan
1
2016
D
Feb
2
DMN10H220LVT
Document number: DS37958 Rev. 2 - 2
Mar
3
YM
ADVANCE INFORMATION
Product Summary
2017
E
Apr
4
220 = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: C = 2015)
M = Month (ex: 9 = September)
2018
F
May
5
Jun
6
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2019
G
Jul
7
2020
H
Aug
8
Sep
9
2021
I
Oct
O
2022
J
Nov
N
Dec
D
April 2015
© Diodes Incorporated
DMN10H220LVT
Maximum Ratings (@TA = +25°C unless otherwise specified.)
ADVANCE INFORMATION
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
(Note 6)
Continuous Drain Current (Note 5) VGS = 10V
(Note 5)
TA = +25C
TA = +70C
TA = +25C
TA = +70C
Value
100
16
2.24
1.79
ID
A
1.87
1.50
1.50
6.60
ID
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Units
V
V
IS
IDM
A
A
A
Thermal Characteristics (@TA = +25°C unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
TA = +70°C
(Note 6)
(Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
PD
RθJA
Operating and Storage Temperature Range
Electrical Characteristics
Value
1.67
1.07
75
108
-55 to +150
TJ, TSTG
Units
W
°C/W
°C
(@TA = +25°C unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
100
—
—
—
—
—
—
1
±100
V
μA
nA
VGS = 0V, ID = 250μA
VDS = 100V, VGS = 0V
VGS = 16V, VDS = 0V
VGS(th)
1
RDS (ON)
—
VSD
—
2.5
220
250
1.2
V
Static Drain-Source On-Resistance
1.8
172
211
0.77
VDS = VGS, ID = 250μA
VGS = 10V, ID = 1.6A
VGS = 4.5V, ID = 1.3A
VGS = 0V, IS = 1.1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—
401
22
17
2.1
4.1
8.3
1.5
2
6.8
8.2
7.9
3.6
17
9.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
V
Test Condition
pF
VDS = 25V, VGS = 0V
f = 1MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 50V, ID = 1.6A
ns
VDS = 50V, VGS = 4.5V,
RG = 6.8ΩID = 1A
ns
nC
IF = 1.1A, di/dt =100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
DMN10H220LVT
Document number: DS37958 Rev. 2 - 2
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DMN10H220LVT
10.0
10
9.0
9
VDS = 10V
VGS = 6.0V
8
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 10V
7.0
7
VGS = 9.0V
VGS = 5.0V
VGS = 8.0V
6.0
6
VGS = 4.5V
5.0
TA = 125°C
4
VGS = 4.0V
3.0
TA = 85°C
3
TA = 25°C
2.0
2
1.0
VGS = 3.5V
0
0.5
1
1.5
2
2.5
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
3
0.35
0.3
VGS = 4.5V
0.2
0.15
VGS = 10V
0.1
0.05
0
0
1
2
3
4
5
6
7
8
9
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.4
0.25
TA = -55°C
1
0.0
10
3
4
5
6
7
8
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
ID = 200mA
ID = 100mA
2
4
6
8
10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
20
3
0.70
VGS = 4.5V
0.60
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
TA = 150°C
5
4.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE INFORMATION
8.0
0.50
0.40
TA = 150°C
0.30
TA = 125°C
TA = 85°C
0.20
TA = 25°C
0.10
2.5
VGS = 10 V
ID = 10A
2
1.5
VGS = 4.5V
ID = 5A
1
0.5
TA = -55°C
0
-50
0.00
0
1
2
3
4
5
6
7
8
9
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN10H220LVT
Document number: DS37958 Rev. 2 - 2
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
10
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DMN10H220LVT
2.5
VGS(th), GATE THRESHOLD VOLTAGE (V)
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.4
0.3
VGS = 4.5V
ID = 5A
0.2
VGS = 10 V
ID = 10A
0.1
ID = 1mA
1.9
ID = 250µA
1.6
1.3
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 7 On-Resistance Variation with Temperature
1000
10
CT, JUNCTION CAPACITANCE (pF)
9
8
IS, SOURCE CURRENT (A)
2.2
1
-50
0
-50
7
6
TA = 150°C
5
4
TA = 85°C
3
C iss
100
TA = 125°C
TA = 25°C
2
C oss
TA = -55°C
1
C rss
f = 1MHz
10
0
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
0
5
10
15
20
25
30
35
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
R DS(on)
Limited
8
6
4
1
DC
PW = 10s
PW = 1s
0.1
0
2
4
6
8
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN10H220LVT
Document number: DS37958 Rev. 2 - 2
10
PW = 100ms
PW = 10ms
0.01
2
0
40
10
VDS = 50V
ID = 1.6A
ID , DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
0.5
0.001
0.1
TJ(m ax) = 150°C
PW = 1ms
PW = 100µs
TA = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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DMN10H220LVT
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCE INFORMATION
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja (t) = r(t) * Rthja
Rthja = 109°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
DMN10H220LVT
Document number: DS37958 Rev. 2 - 2
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DMN10H220LVT
Package Outline Dimensions
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
TSOT26
Dim Min Max Typ
A
— 1.00 —
A1 0.01 0.10 —
A2 0.84 0.90 —
D
—
— 2.90
E
—
— 2.80
E1
—
— 1.60
b
0.30 0.45 —
c
0.12 0.20 —
e
—
— 0.95
e1
—
— 1.90
L
0.30 0.50 —
L2
—
— 0.25
θ
0°
8°
4°
θ1
4°
12°
—
All Dimensions in mm
D
e1
E
E1
L2
c
4x1
e
L

6x b
A
A2
A1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Y1
Y (6x)
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
X (6x)
DMN10H220LVT
Document number: DS37958 Rev. 2 - 2
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DMN10H220LVT
ADVANCE INFORMATION
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