Foshan MJE13003VG1 Silicon npn transistor in a to-92 plastic package. Datasheet

MJE13003VG1
Rev.E Mar.-2016
描述
/
DATA SHEET
Descriptions
TO-92 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-92 Plastic Package.

特征
/ Features
耐压高,快速转换。
High Voltage Capability High Speed Switching.
用途
/
Applications
主要用于节能灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.
内部等效电路
引脚排列
12
/ Equivalent Circuit
/ Pinning
3
PIN1:Base
PIN 2:Collector
PIN 3:Emitter
放大及印章代码
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MJE13003VG1
Rev.E Mar.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
400
V
Collector to Emitter Voltage
VCEO
200
V
Emitter to Base Voltage
VEBO
9.0
V
Collector Current - Continuous
IC
1.5
A
Collector Power Dissipation
PC
1.0
W
Junction Temperature
Tj
150
℃
Tstg
-55~150
℃
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
Collector to Base Breakdown
Voltage
Collector to Emitter Breakdown
Voltage
Emitter to Base Breakdown
Voltage
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
VCBO
IC=1mA
IE=0
400
V
VCEO
IC=10mA
IB=0
200
V
VEBO
IE=1mA
IC=0
9.0
V
Collector Cut-Off Current
ICBO
VCB=400V
IE=0
0.1
mA
Collector cut-off current
ICEO
VCE=200V
IB=0
0.1
mA
Emitter Base Cut-Off Current
IEBO
VEB=9.0V
IC=0
0.1
mA
DC Current Gain
hFE
VCE=5.0V
IC=200mA
10
40
Collector to Emitter Saturation
Voltage
VCE(sat)
IC=1A
IB=250mA
0.6
V
Base to Emitter Saturation Voltage
VBE(sat)
IC=1A
IB=250mA
1.2
V
VCE=10V
f=1.0MHz
IC=200mA
VCE=5V
(UI9600)
IC=100mA
Transition Frequency
fT
Fall time
tf
Storage time
tS
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5.0
MHz
0.6
μs
4.0
μs
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MJE13003VG1
Rev.E Mar.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
SOA(DC)
hFE-Ic
hFE-Ic
Vces-IC
Vbes-IC
tS-Ta
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PC-TC
hFE-Ta
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MJE13003VG1
Rev.E Mar.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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MJE13003VG1
Rev.E Mar.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
13003V
G1
****
说明:
BR:  

为公司代码
13003V:
为型号代码
G1: 

规格代码
****:

为生产批号代码,随生产批号变化。
Note:
BR:
Company Code.
13003V:
Product Type.
G1:
Specification Code.
****:
Lot No. Code,code change with Lot No.
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MJE13003VG1
Rev.E Mar.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
散件包装
Units 包装数量
Units/Bag
只/袋
Bags/Inner Box
袋/盒
Units/Inner Box
只/盒
Dimension
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Bag 袋
包装尺寸
Inner Box 盒
(unit:mm3)
Outer Box 箱
1,000
10
10,000
5
50,000
135×190
237×172×102
560×245×195
1,000
10
10,000
10
100,000
135×190
237×172×102
560×245×375
Units/tape
只/纸带
Tape/Inner Box
纸带/盒
Rows/Inner Box
纸带层/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Inner Box 盒
3,000
1
120
10
30,000
328×230×42
/ AMMO
Package Type
封装形式
使用说明
Time:10±1 sec
/ BULK
TO-92
TO-92
Temp:270±5℃
/ Packaging SPEC.
Package Type
封装形式
编带包装
时间:10±1 sec.
Units 包装数量
Dimension
包装尺寸
(unit:mm3)
Outer Box 箱
小箱 480×346×235,
大箱 547×407×268
/ Notices
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