MBRD5H100, NBRD5H100 Switch-mode Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use in low voltage, high frequency switching power supplies, free wheeling diodes, and polarity protection diodes. www.onsemi.com SCHOTTKY BARRIER RECTIFIER 5 AMPERES, 100 VOLTS Features • • • • • • • Guardring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature Epoxy Meets UL 94 V−0 @ 0.125 in Short Heat Sink Tab Manufactured − Not Sheared! NBRD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant* DPAK CASE 369C 1 4 3 (Pin 1: No Connect) Mechanical Characteristics: • Case: Epoxy, Molded, Epoxy Meets UL 94 V−0 • Weight: 0.4 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL1 Requirements ESD Ratings: ♦ Machine Model = C (> 400 V) ♦ Human Body Model = 3B (> 8000 V) MARKING DIAGRAM YWW B 5100G Y WW B5100 G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION Package Shipping† MBRD5H100T4G DPAK (Pb−Free) 2,500 / Tape & Reel NBRD5H100T4G DPAK (Pb−Free) 2,500 / Tape & Reel NBRD5H100T4G−VF01 DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 7 1 Publication Order Number: MBRD5H100/D MBRD5H100, NBRD5H100 MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 100 V Average Rectified Forward Current (Rated VR) TC = 171°C IF(AV) Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 171°C IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM A 5 A 10 Operating Junction and Storage Temperature Range (Note 1) A 105 TJ, Tstg −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value RqJC RqJA 1.6 95.8 Symbol Value Unit °C/W Thermal Resistance Junction−to−Case (Note 2) Junction−to−Ambient (Note 2) 2. When mounted using minimum recommended pad size on FR−4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (IF = 5 A, TJ = 25°C) (IF = 5 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) IR Unit V 0.71 0.60 4.5 3.5 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0% www.onsemi.com 2 MBRD5H100, NBRD5H100 100 100 10 1 150°C 25°C 125°C 0.1 0.1 0.2 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 1 150°C 25°C 125°C 0.1 0.1 0.2 0.4 0.6 0.7 0.8 0.9 1.0 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.1 1.2 100 1 125°C 0.01 0.001 25°C 0.0001 10 150°C 1 125°C 0.1 0.01 25°C 0.001 0.00001 0.0001 0 10 20 30 40 50 60 70 80 90 0 100 10 20 VR, REVERSE VOLTAGE (V) 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 10 I F(AV) , AVERAGE FORWARD CURRENT (A) 1200 TJ = 25°C f = 1 MHz 1000 C, CAPACITANCE (pF) 0.5 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 150°C 0.1 0.3 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Ir, REVERSE CURRENT (mA) Ir, REVERSE CURRENT (mA) IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 800 600 400 200 0 0 20 40 60 80 100 9 8 RqJC = 1.6 °C/W dc 7 6 Square 5 4 3 2 1 0 145 150 155 160 165 170 TC, CASE TEMPERATURE (°C) VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance Figure 6. Current Derating, Case www.onsemi.com 3 175 180 MBRD5H100, NBRD5H100 5 P F(AV) , AVERAGE POWER DISSIPATION (W) I F(AV) , AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS RqJA = 95.8 °C/W 4 dc 3 Square Wave 2 1 0 0 100 R(t) (C/W) 10 1.0 20 40 60 80 100 120 140 160 22 20 18 Square Wave 16 14 12 dc 10 8 6 4 2 0 180 0 5 10 15 TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating, Ambient Figure 8. Forward Power Dissipation 20 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Case www.onsemi.com 4 10 100 1000 MBRD5H100, NBRD5H100 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 b2 e c SIDE VIEW b TOP VIEW 0.005 (0.13) M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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