CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2015.10.05 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET MTB04N03Q8 BVDSS ID@ TC=25°C, VGS=10V RDSON@VGS=10V, ID=18A RDSON@VGS=4.5V, ID=12A 30V 25A 3.5mΩ(typ) 4.8mΩ(typ) Description The MTB04N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free lead plating package Ordering Information Device MTB04N03Q8-0-T3-G Package SOP-8 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB04N03Q8 CYStek Product Specification CYStech Electronics Corp. Symbol Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2015.10.05 Page No. : 2/9 Outline MTB04N03Q8 SOP-8 Pin 1 G：Gate D：Drain S：Source Absolute Maximum Ratings (Ta=25°C) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Pulsed Drain Current Avalanche Current Avalanche Energy @ L=0.1mH, ID=20A, VDD=15V Repetitive Avalanche Energy @ L=0.05mH TA=25℃ Total Power Dissipation TA=100℃ VDS VGS Operating Junction and Storage Temperature Range Tj, Tstg 30 ±20 25 16 100 *1 20 40 0.3 *2 2.5 1 -55~+150 Symbol Rth,j-c Rth,j-a Value 25 50 *3 ID IDM IAS EAS EAR PD Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Unit °C/W Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle≤1% 3. Surface mounted on 1 in² copper pad of FR-4 board, 125°C/W when mounted on minimum copper pad MTB04N03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2015.10.05 Page No. : 3/9 Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. 30 1.0 - 1.6 32 3.5 4.8 2.5 ±100 1 25 4 6 - 4200 405 400 50 30 8 17 18 11 65 15 1.6 - - 35 14 10 40 1.2 - Unit Test Conditions Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Ciss Coss Crss Qg (VGS=10V) *1, 2 Qg (VGS=4.5V) *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr V S nA μA mΩ VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =5V, ID=18A VGS=±20V VDS =30V, VGS =0V VDS =30V, VGS =0V, Tj=125°C VGS =10V, ID=18A VGS =4.5V, ID=12A pF VGS=0V, VDS=15V, f=1MHz nC VDS=15V, VGS=10V, ID=18A ns VDS=15V, ID=1A, VGS=10V, RGS=2.7Ω Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. MTB04N03Q8 CYStek Product Specification Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2015.10.05 Page No. : 4/9 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 50 240 ID, Drain Current(A) BVDSS, Drain-Source Breakdown Voltage(V) 7V,8V,9V,10V 200 6V VGS=5V 160 VGS=4V 120 80 40 VGS=2V 45 40 35 30 20 -100 0 0 2 4 6 8 VDS , Drain-Source Voltage(V) ID=250μA, VGS=0V 25 VGS=3V 10 Static Drain-Source On-State resistance vs Drain Current 200 1.2 100 VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 0 50 100 150 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1000 VGS=2.5V VGS=3V 10 VGS=4.5V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 1 0.001 0.2 0.01 0.1 1 ID, Drain Current(A) 10 100 0 R DS(ON), Static Drain-Source On-State Resistance(mΩ) 100 90 ID=18A 80 2 4 6 8 IDR , Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON), Static Drain-Source OnState Resistance(mΩ) -50 70 60 50 40 30 20 10 12 10 8 VGS=4.5V, ID=12A 6 4 VGS=10V, ID=18A 2 0 0 0 MTB04N03Q8 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2015.10.05 Page No. : 5/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2 10000 VGS(th), Threshold Voltage(V) Capacitance---(pF) Ciss C oss 1000 Crss ID=250μA 1.8 1.6 1.4 1.2 1 0.8 100 0.1 1 10 VDS , Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 Gate Charge Characteristics 100 10 1 VDS=10V Pulsed Ta=25°C 0.1 0.01 0.001 VDS=15V ID=18A 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 40 Qg, Total Gate Charge(nC) 50 60 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 30 100 RDS(ON) Limit 10 10 μs 100μs 1ms 1 TA=25°C, Tj(max)=150°C VGS=10V, RθJA=50°C/W Single Pulse 0.1 10ms DC 100ms ID, Maximum Drain Current(A) 1000 ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 25 20 15 10 5 VGS=10V, Tj(max)=150°C 0 0.01 0.01 MTB04N03Q8 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC , Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2015.10.05 Page No. : 6/9 Typical Characteristics(Cont.) Transient Thermal Response Curves 100 ZθJA(t), Thermal Response D=0.5 10 0.2 1.ZθJA(t)=50 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*ZθJA(t) 0.1 0.05 0.02 1 0.01 Single Pulse 0.1 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTB04N03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2015.10.05 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB04N03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2015.10.05 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB04N03Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C789Q8 Issued Date : 2011.12.16 Revised Date : 2015.10.05 Page No. : 9/9 SOP-8 Dimension Marking: Device Name Date Code 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.000 5.800 6.200 1.270 (BSC) 0.400 1.270 8° 0 Inches Min. Max. 0.150 0.157 0.228 0.244 0.050 (BSC) 0.016 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB04N03Q8 CYStek Product Specification