StrongIRFET™ IRFI7440GPbF HEXFET® Power MOSFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC Inverters 2.5m 95A S D TO-220AB Full-Pak D Drain Standard Pack Form Quantity Tube 50 6 S Source Orderable Part Number IRFI7440GPbF 100 ID = 57A 5 80 4 T J = 125°C 3 2 60 40 20 T J = 25°C 1 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 max G ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) TO-220 Full-Pak 2.0m ID G Gate IRFI7440GPbF RDS(on) typ. S Benefits Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Lead-Free, RoHS Compliant Package Type 40V G Base part number VDSS D www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 18, 2014 IRFI7440GPbF Absolute Maximium Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Max. 95 67 380 42 0.28 ± 20 Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Junction-to-Case RJC Junction-to-Ambient RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS IGSS RG Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Units A W W/°C V -55 to + 175 °C 300 10 lbf·in (1.1 N·m) 201 407 mJ See Fig. 15, 16, 23a, 23b A mJ Typ. ––– ––– Max. 3.6 65 Units °C/W Min. 40 Typ. Max. ––– ––– Units Conditions V VGS = 0V, ID = 250µA ––– ––– 2.2 ––– ––– ––– ––– ––– 37 2.0 3.0 ––– ––– ––– ––– 2.3 mV/°C Reference to 25°C, ID = 2mA m VGS = 10V, ID = 57A V VDS = VGS, ID = 100µA VDS = 40V, VGS = 0V µA VDS = 40V,VGS = 0V,TJ =125°C VGS = 20V nA VGS = -20V ––– 2.5 3.9 1.0 150 100 -100 ––– Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 124µH, RG = 50, IAS = 57A, VGS =10V. ISD 57A, di/dt 962A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 29A, VGS =10V. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRFI7440GPbF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg – Qgd) Turn-On Delay Time Rise Time Min. 144 ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– S VDS = 10V, ID =57A 88 132 ID = 57A 22 ––– VDS = 20V nC 30 ––– VGS = 10V 58 ––– 11 ––– VDD = 20V ID = 57A 42 ––– ns 56 ––– RG= 2.7 VGS = 10V 36 ––– td(off) Turn-Off Delay Time ––– tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– 4549 689 450 ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– 835 981 ––– ––– Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 95 ––– ––– 380 VSD Diode Forward Voltage ––– ––– 1.3 dv/dt Peak Diode Recovery dv/dt VGS = 0V VDS = 25V pF ƒ = 1.0MHz, See Fig.7 VGS = 0V, VDS = 0V to 32V VGS = 0V, VDS = 0V to 32V Diode Characteristics Symbol IS ISM trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current 3 www.irf.com © 2014 International Rectifier A ––– 5.1 ––– ––– ––– ––– ––– 36 38 45 49 ––– ––– ––– ––– ––– 2.1 ––– V Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 57A,VGS = 0V V/ns TJ = 175°C,IS =57A, VDS = 40V TJ = 25°C TJ = 125°C TJ = 25°C nC TJ = 125°C ns A Submit Datasheet Feedback TJ = 25°C VDD = 34V IF = 57A, di/dt = 100A/µs November 18, 2014 IRFI7440GPbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 10 BOTTOM 100 4.5V 1 60µs PULSE WIDTH 4.5V 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 0.1 10 0.01 0.1 1 10 0.1 V DS, Drain-to-Source Voltage (V) 1000 2.0 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics T J = 175°C T J = 25°C 10 VDS = 10V 60µs PULSE WIDTH 1.0 ID = 57A VGS = 10V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 3 4 5 6 7 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 57A C oss = C ds + C gd C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) 10000 Ciss Coss Crss 1000 100 12.0 VDS= 32V VDS= 20V 10.0 8.0 6.0 4.0 2.0 0.0 1 10 100 0 20 40 60 80 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback 120 November 18, 2014 IRFI7440GPbF ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175°C 100 T J = 25°C 10 1msec 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V DC 0.1 1.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.6 1 10 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area 0.7 50 Id = 2mA 0.6 48 0.5 46 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) 100µsec 44 42 0.4 0.3 0.2 40 0.1 38 0.0 -5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) 5 10 15 20 25 30 35 40 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m ) 0 Fig 12. Typical Coss Stored Energy 5.0 VGS = 5.5V VGS = 6.0V VGS = 7.0V VGS = 8.0V VGS =10V 4.5 4.0 3.5 3.0 2.5 2.0 0 20 40 60 80 100 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRFI7440GPbF Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart = 25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 200 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 57A 150 100 50 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback November 18, 2014 IRFI7440GPbF 10 3.5 TJ = 125°C 3.0 2.5 6 ID = 100µA ID = 250µA 4 ID = 1.0mA 2.0 ID = 1.0A 2 1.5 0 1.0 -75 -50 -25 0 0 25 50 75 100 125 150 175 200 400 600 800 1000 T J , Temperature ( °C ) diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 200 10 IF = 57A V R = 34V TJ = 25°C IF = 38A V R = 34V 8 TJ = 25°C TJ = 125°C 150 TJ = 125°C 6 QRR (nC) IRRM (A) IF = 57A V R = 34V TJ = 25°C 8 IRRM (A) VGS(th) , Gate threshold Voltage (V) 4.0 4 100 50 2 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt 200 IF = 38A V R = 34V TJ = 25°C 150 QRR (nC) TJ = 125°C 100 50 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRFI7440GPbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 18, 2014 IRFI7440GPbF TO-220 Full–Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220 Full-Pak Part Marking Information TO-220AB Full-Pak packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014 IRFI7440GPbF Qualification Information† Industrial Qualification Level Moisture Sensitivity Level TO-220 Full-Pak N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/18/2014 Comments Updated EAS (L =1mH) = 407mJ on page 2 Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 29A, VGS =10V”. on page 2 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 18, 2014